中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

12 records (took 0.015 seconds)

    MRAM having an unpinned, fixed synthetic anti-ferromagnetic structure
    2.
    发明授权
    MRAM having an unpinned, fixed synthetic anti-ferromagnetic structure 有权
    MRAM具有未固定的，固定的合成反铁磁结构

    公开(公告)号：US09391264B2

    公开(公告)日：2016-07-12

    申请号：US14727910

    申请日：2015-06-02

    Applicant: Everspin Technologies, Inc.

    Inventor： Srinivas V. Pietambaram ,  Bengt J. Akerman ,  Renu Whig ,  Jason A. Janesky ,  Nicholas D. Rizzo ,  Jon M. Slaughter

    IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  H01L27/22

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

    Abstract: An MRAM bit includes a free magnetic region, a fixed magnetic region comprising an anti-ferromagnetic material, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, wherein the one or more ferromagnetic materials includes cobalt, (ii) a second layer of one or more ferromagnetic materials wherein the one or more ferromagnetic materials includes cobalt, (iii) a third layer of one or more ferromagnetic materials, and an anti-ferromagnetic coupling layer, wherein: (a) the anti-ferromagnetic coupling layer is disposed between the first and third layers, and (b) the second layer is disposed between the first layer and the anti-ferromagnetic coupling layer.

    Abstract translation: MRAM位包括自由磁区，包括反铁磁材料的固定磁区和位于自由磁区与固定磁区之间的电介质层。 在一个方面，固定磁区基本上由未固定的固定合成反铁磁（SAF）结构组成，其包括（i）一个或多个铁磁材料的第一层，其中一个或多个铁磁材料包括钴，（ii ）一种或多种铁磁材料的第二层，其中所述一种或多种铁磁材料包括钴，（iii）一种或多种铁磁材料的第三层和反铁磁性耦合层，其中：（a）所述反铁磁性材料 耦合层设置在第一和第三层之间，（b）第二层设置在第一层和反铁磁性耦合层之间。

    MRAM synthetic anitferomagnet structure
    3.
    发明授权
    MRAM synthetic anitferomagnet structure 有权
    MRAM合成非铁磁结构

    公开(公告)号：US09093637B2

    公开(公告)日：2015-07-28

    申请号：US14303200

    申请日：2014-06-12

    Applicant: Everspin Technologies, Inc.

    Inventor： Srinivas V. Pietambaram ,  Bengt J. Akerman ,  Renu Whig ,  Jason A. Janesky ,  Nicholas D. Rizzo ,  Jon M. Slaughter

    IPC: H01L43/10 ,  H01L43/08 ,  H01L43/02 ,  H01L27/22

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

    Abstract: An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.

    Abstract translation: MRAM位（10）包括自由磁区（15），包括反铁磁材料的固定磁区（17）和隧道势垒（16），其包括位于自由磁区（15）和固定 磁区（17）。 MRAM位（10）通过使用高Hk（单轴各向异性），高Hsat（饱和磁场）和显示明确定义的理想软磁性质的组合，包括表现出明确的高Hflop的固定磁区，避免了钉扎层 容易和坚硬的轴。

    MRAM SYNTHETIC ANITFEROMAGNET STRUCTURE
    4.
    发明申请
    MRAM SYNTHETIC ANITFEROMAGNET STRUCTURE 有权
    MRAM合成ANITFEROMAGNET结构

    公开(公告)号：US20150021606A1

    公开(公告)日：2015-01-22

    申请号：US14303200

    申请日：2014-06-12

    Applicant: Everspin Technologies, Inc.

    Inventor： Srinivas V. Pietambaram ,  Bengt J. Akerman ,  Renu Whig ,  Jason Janesky ,  Nicholas D. Rizzo ,  Jon Slaughter

    IPC: H01L43/10 ,  H01L43/02

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

    Abstract: An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.

    Abstract translation: MRAM位（10）包括自由磁区（15），包括反铁磁材料的固定磁区（17）和隧道势垒（16），其包括位于自由磁区（15）和固定 磁区（17）。 MRAM位（10）通过使用高Hk（单轴各向异性），高Hsat（饱和磁场）和显示明确定义的理想软磁性质的组合，包括表现出明确的高Hflop的固定磁区，避免了钉扎层 容易和坚硬的轴。

    MRAM SYNTHETIC ANITFEROMAGNET STRUCTURE
    5.
    发明申请
    MRAM SYNTHETIC ANITFEROMAGNET STRUCTURE 有权
    MRAM合成ANITFEROMAGNET结构

    公开(公告)号：US20140021471A1

    公开(公告)日：2014-01-23

    申请号：US13925590

    申请日：2013-06-24

    Applicant: Everspin Technologies, Inc.

    Inventor： Srinivas V. Pietambaram ,  Bengt J. Akerman ,  Renu W. Dave ,  Jason A. Janesky ,  Nicholas D. Rizzo ,  Jon M. Slaughter

    IPC: H01L43/10

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

    Abstract: An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.

    Abstract translation: MRAM位（10）包括自由磁区（15），包括反铁磁材料的固定磁区（17）和隧道势垒（16），其包括位于自由磁区（15）和固定 磁区（17）。 MRAM位（10）通过使用高Hk（单轴各向异性），高Hsat（饱和磁场）和显示明确定义的理想软磁性质的组合，包括表现出明确的高Hflop的固定磁区，避免了钉扎层 容易和坚硬的轴。

    Magnetoresistive MTJ Stack having an Unpinned, Fixed Synthetic Anti-Ferromagnetic Structure
    10.
    发明申请
    Magnetoresistive MTJ Stack having an Unpinned, Fixed Synthetic Anti-Ferromagnetic Structure 审中-公开
    具有未固定，固定的合成反铁磁结构的磁阻MTJ堆叠

    公开(公告)号：US20160315252A1

    公开(公告)日：2016-10-27

    申请号：US15199862

    申请日：2016-06-30

    Applicant: Everspin Technologies, Inc.

    Inventor： Srinivas V. Pietambaram ,  Bengt J. Akerman ,  Renu Whig ,  Jason A. Janesky ,  Nicholas D. Rizzo ,  Jon M. Slaughter

    IPC: H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

    Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.

    Abstract translation: 磁阻磁隧道结（MTJ）堆叠包括位于自由磁区和固定磁区之间的自由磁区，固定磁区和电介质层。 在一个方面，固定磁性区域基本上由未固定的固定的合成反铁磁（SAF）结构组成，其包括（i）包括钴的一种或多种铁磁材料的第一层，（ii）多层区域，包括 多个铁磁材料层，其中所述多个铁磁材料层包括一个或多个包含钴的铁磁材料的层，以及（iii）设置在所述第一层和所述多层区域之间的反铁磁性耦合层。 自由磁区可以包括圆形，第一层的一个或多个铁磁材料可以包括钴，铁和硼，并且电介质层可以设置在第一层上。

Patent Agency Ranking