公开(公告)号：US20190189176A1

公开(公告)日：2019-06-20

申请号：US16286793

申请日：2019-02-27

Applicant: Everspin Technologies, Inc.

Inventor： Han-Jong CHIA ,  Sumio IKEGAWA ,  Michael TRAN ,  Jon SLAUGHTER

IPC: G11C11/16 ,  H01F10/32 ,  H01L43/12 ,  H01L43/02 ,  H01L43/10 ,  G11C11/56 ,  H01L43/08

Abstract: A magnetoresistive memory device that stores data in the synthetic antiferromagnet (SAF) included in each spin-torque memory cell provides for more robust data storage. In normal operation, the memory cells use the free portion of the memory cell for data storage. Techniques for storing data in the reference portions of memory cells are presented, where an unbalanced SAF that includes ferromagnetic layers having different magnetic moments is used to lower the switching barrier for the SAF and allow for writing data values to the SAF using lower currents and magnetic fields than would be required for a balanced SAF.

公开(公告)号：US20210288245A1

公开(公告)日：2021-09-16

申请号：US17263434

申请日：2019-07-29

Applicant: Everspin Technologies, Inc.

Inventor： Renu WHIG ,  Sumio IKEGAWA ,  Jon SLAUGHTER ,  Michael TRAN ,  Jacob Wang CHENCHEN ,  Ganesh Kolliyil RAJAN

IPC: H01L43/10 ,  H01L43/12 ,  H01F10/32

Abstract: A magnetoresistive device includes a magnetically fixed region and a magnetically free region positioned on opposite sides of a tunnel barrier region. One or more transition regions, including at least a first transition region and second transition region, is positioned between the magnetically fixed region and the tunnel barrier region. The first transition region includes a non-ferromagnetic transition metal and the second transition region includes an alloy including iron and boron.

公开(公告)号：US20250063953A1

公开(公告)日：2025-02-20

申请号：US18933142

申请日：2024-10-31

Applicant: Everspin Technologies, Inc.

Inventor： Renu WHIG ,  Sumio IKEGAWA ,  Jon SLAUGHTER ,  Michael TRAN ,  Jacob Wang CHENCHEN ,  Ganesh Kolliyil RAJAN

IPC: H10N50/85 ,  H01F10/32 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10

Abstract: A magnetoresistive device includes a magnetically fixed region and a magnetically free region positioned on opposite sides of a tunnel barrier region. One or more transition regions, including at least a first transition region and second transition region, is positioned between the magnetically fixed region and the tunnel barrier region. The first transition region includes a non-ferromagnetic transition metal and the second transition region includes an alloy including iron and boron.