Abstract:
A color image pickup device is provided with four pixel groups i.e. first to fourth pixel groups. The first pixel group is composed of nine pixels of 3x3 each having one of color filters, and the pixels are arranged in a Bayer pattern. The second pixel group is adjacent to the bottom of the first pixel group. The third pixel group is adjacent to the right of the second pixel group. The fourth pixel group is adjacent to the top of the third pixel group. The second pixel group, the third pixel group, and the fourth pixel group have such array patterns of the color filters that the array pattern of the first pixel group is turned by 90 degrees, 180 degrees, and 270 degrees counterclockwise, respectively. By using the pixels of 6x6 including the first to fourth pixel groups as a basic unit, an imaging surface is configured.
Abstract:
A color filter array has G filters, R filters, and B filters. A pair of phase difference pixels adjoining in a horizontal direction is provided with one of the G, R, and B filters. In the color filter array, a fundamental array pattern, including the G, R, and B filters, is repeatedly disposed in horizontal and vertical directions. The G filters, which most greatly contributes to obtainment of luminance information, are disposed in every line extending in the horizontal direction, the vertical direction, and slanting directions. Both of the R filters and the B filters are disposed in every line extending in the slanting directions. The number of the G filters is larger than that of the R filters or the B filters.
Abstract:
A CCD image sensor, being a solid state imaging device, has four types of pixels, first to fourth pixels. The first to fourth pixels are arranged in a predetermined pattern. Each of the pixels has a PD and a microlens. Each of the microlens is arranged with its optical axis center eccentric or shifted in a predetermined direction from a center of a light receiving surface of the PD. A part of the microlens overlaps one or more adjacent pixels.
Abstract:
An imaging element having a plurality of pixel cells which is arranged in a row direction and a column direction which is perpendicular to the row direction in a lattice, in which two adjacent pixel cells which include photoelectric convening units which detect the same color light form a pair and the pairs are periodically arranged, in each of pixel cell rows in which pixel cells are arranged in the row direction, the micro lenses are arranged such that the micro lenses in odd-numbered pixel cell rows is off-centered in the row direction from the micro lenses in even-numbered pixel cell rows by a half of an arrangement pitch of the micro lenses, and each micro lens which is provided in at least one of the odd-numbered row and the even-numbered row is disposed over two photoelectric converting units which detect different color light.
Abstract:
A solid-state imaging device 5 is equipped with sets of pixel cells 53(1)-53(4), each set assuming a Bayer arrangement. A G pixel cell 53(2) is located right-adjacent to a G pixel cell 53(1). A G pixel cell 53(3) is located bottom-adjacent to the G pixel cell 53(2). A G pixel cell 53(4) is located right-adjacent to the G pixel cell 53(3).
Abstract:
A solid-state imaging device has an element substrate that is formed with a plurality of photodiodes, a back-surface electrode, and an electric charge discharging path. A wiring layer for controlling the photodiodes is formed in a front surface of the element substrate. Light is incident upon the photodiodes from a back surface of the element substrate. By applying the back-surface electrode with a voltage in accordance with timing of operation control of the photodiodes, a potential is modulated in the vicinity of the back surface of the element substrate. When an electron inversion layer formed in the vicinity of the back surface of the element substrate upon applying a positive voltage to the back-surface electrode is coupled to a region for accumulating signal charge through a monotonously changing potential gradient, the electric charge that has flowed into the electron inversion layer is discharged through the electric charge discharging path.
Abstract:
A generation section generates a first display image based on an image signal output from an image pick-up device, and a second display image based on first and second image signals output from the image pick-up device. An identification section identifies an image region in the second display image generated by the generation section satisfying both a first condition and a second condition. The image region identified by the identification section is then displayed so as to be distinguishable from other regions in the second display image. The first condition indicates a condition of the magnitude of contrast being a first specific value or greater, and the second condition indicates a degree of matching between the first image and the second image being a second specific value or greater.
Abstract:
A CCD image sensor is provided with a pixel set. The pixel set is composed of first and second pixels and a microlens. The pixels are arranged side by side in a horizontal direction. The microlens has a hemispheric shape. A diameter of the microlens is larger than a length of a rectangular region, being an external shape of the first and second pixels, in a height direction. The rectangular region has a height and width ratio of approximately 1:2. The pixel sets are arranged in a width direction of the rectangular region to constitute a pixel row. In the CCD image sensor, the pixel rows are arranged in the height direction of the rectangular region, with the adjacent pixel rows shifted from each other in the horizontal direction by half pitch of the rectangular region.