公开(公告)号：US20140048131A1

公开(公告)日：2014-02-20

申请号：US14062244

申请日：2013-10-24

Applicant: FUJIFILM Corporation

Inventor： Satoshi TANAKA ,  Shinichi NAKAHIRA ,  Yuki MATSUNAMI ,  Tomohito ASAI

IPC: H05K1/09 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H05K1/092 ,  G06F3/041 ,  G06F2203/04103 ,  H01B1/22 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/186 ,  H01L31/1884 ,  Y02E10/50

Abstract: A conductive member containing a base material and a conductive layer provided on the base material, wherein the conductive layer includes (i) a metallic nanowire having an average short-axis length of 150 nm or less and (ii) a binder, the binder including a three-dimensional crosslinked structure that includes a partial structure represented by the following Formula (Ia) and a partial structure represented by the following Formula (IIa) or Formula (IIb). In the Formulae, each of M1 and M2 independently represents an element selected from the group consisting of Si, Ti and Zr. Each R3 independently represents a hydrogen or a hydrocarbon group.

Abstract translation: 一种导电构件，其包含设置在所述基材上的基材和导电层，其中，所述导电层包括（i）平均短轴长度为150nm以下的金属纳米线，和（ii）粘合剂，所述粘合剂包含 包含由下式（Ia）表示的部分结构和由下式（IIa）或式（IIb）表示的部分结构的三维交联结构。 在式中，M1和M2各自独立地表示选自Si，Ti和Zr的元素。 每个R 3独立地表示氢或烃基。

公开(公告)号：US20140069488A1

公开(公告)日：2014-03-13

申请号：US14062504

申请日：2013-10-24

Applicant: FUJIFILM CORPORATION

Inventor： Satoshi TANAKA ,  Shinichi NAKAHIRA ,  Yuki MATSUNAMI ,  Tomohito ASAI

IPC: H01B1/22 ,  H01L21/02 ,  H05K1/02

CPC classification number: H05K1/02 ,  G06F3/045 ,  G06F2203/04103 ,  H01B1/22 ,  H01L21/02 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/1888 ,  Y02E10/541 ,  Y02P70/521

Abstract: A conductive member including: a base material; and a conductive layer disposed on the base material, wherein the conductive layer includes: a metal nanowire including a metal element (a) and having an average minor axis length of 150 nm or less; and a sol-gel cured product obtained by hydrolyzing and polycondensing an alkoxide compound of an element (b) selected from the group consisting of Si, Ti, Zr, and Al; and a ratio of the substance amount of the element (b) contained in the conductive layer to the substance amount of the metal element (a) contained in the conductive layer is in a range of from 0.10/1 to 22/1.

Abstract translation: 一种导电构件，包括：基材; 以及设置在所述基材上的导电层，其中所述导电层包括：包含金属元素（a）并且平均短轴长度为150nm以下的金属纳米线; 和通过水解和缩聚选自Si，Ti，Zr和Al的元素（b）的醇盐化合物而获得的溶胶 - 凝胶固化产物; 并且导电层中所含的元素（b）的物质量与导电层中所含的金属元素（a）的物质量的比例在0.10 / 1〜22/1的范围内。