公开(公告)号：US12221557B2

公开(公告)日：2025-02-11

申请号：US17679415

申请日：2022-02-24

Applicant: FUJIMI INCORPORATED

Inventor： Daiki Ito ,  Toshio Shinoda

IPC: C09G1/02 ,  C09G1/18 ,  H01L21/306

Abstract: There is provided a polishing composition capable of improving the polishing removal rate of silicon nitride to polish silicon oxide and silicon nitride at the same polishing removal rate and polishing silicon nitride with a small number of defects.
A polishing composition contains: abrasives having a positive zeta potential; and a cyclic compound having a mother nucleus with a ring structure and two or more anionic functional groups bonded to the mother nucleus, in which the abrasives contain silica. This polishing composition is used for polishing objects to be polished containing silicon oxide and silicon nitride.

公开(公告)号：US11718768B2

公开(公告)日：2023-08-08

申请号：US17171393

申请日：2021-02-09

Applicant: FUJIMI INCORPORATED

Inventor： Daiki Ito

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/3212

Abstract: A polishing composition according to the present invention contains silica, a nitrogen-containing alkaline compound, and hydrogen peroxide, in which a content of the hydrogen peroxide is more than 0% by mass and less than 0.03% by mass with respect to the total mass of the polishing composition, and a pH exceeds 9.

公开(公告)号：US20200071567A1

公开(公告)日：2020-03-05

申请号：US16557271

申请日：2019-08-30

Applicant: Fujimi Incorporated

Inventor： Toshio Shinoda ,  Yoshihiro Izawa ,  Daiki Ito

IPC: C09G1/02 ,  C09K3/14

Abstract: The polishing composition according to the present invention is used to polish an object to be polished having a silicon oxide film, contains an abrasive grain, a compound having a logarithmic value (Log P) of partition coefficient of 1.0 or more, and a dispersing medium, and has a pH of less than 7.