利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

27 条记录 (耗时 0.017 秒)

    GAS SENSOR AND SENSOR DEVICE
    2.
    发明申请
    GAS SENSOR AND SENSOR DEVICE 审中-公开
    气体传感器和传感器装置

    公开(公告)号：US20170067847A1

    公开(公告)日：2017-03-09

    申请号：US15353006

    申请日：2016-11-16

    申请人： FUJITSU LIMITED

    发明人： Satoru Momose ,  Osamu Tsuboi ,  Ikuo Soga

    IPC分类号： G01N27/407 ,  G01N27/406

    摘要： A gas sensor, which includes a solid electrolyte layer including positive charge carriers to which detection-target gas coordinates, an electrode arranged on part of a plane of the solid electrolyte layer, and a unit configured to accelerate movements of the positive charge carriers.

    摘要翻译： 一种气体传感器，其包括固体电解质层，其包括检测目标气体坐标的正电荷载流子，布置在固体电解质层的平面的一部分上的电极以及用于加速正电荷载体的运动的单元。

    GAS SENSOR DEVICE, MANUFACTURING METHOD THEREOF, AND GAS EVALUATION APPARATUS
    4.
    发明申请
    GAS SENSOR DEVICE, MANUFACTURING METHOD THEREOF, AND GAS EVALUATION APPARATUS 审中-公开

    公开(公告)号：US20200072816A1

    公开(公告)日：2020-03-05

    申请号：US16537497

    申请日：2019-08-09

    申请人： FUJITSU LIMITED

    发明人： Satoru Momose ,  Osamu Tsuboi ,  Michio Ushigome

    IPC分类号： G01N33/497 ,  G01N27/12

    摘要： A gas sensor device includes: a pair of electrodes; a conductor that electrically connects the pair of electrodes to each other; and at least one of a thiolate anion and an organic compound having a mercapto group, which is disposed on a surface of the conductor. A gas evaluation apparatus includes a first gas sensor device as described above and a second gas sensor device which has neither the mercapto group nor the thiolate anion disposed on a surface of its conductor.

    DETECTION DEVICE, MEASUREMENT APPARATUS, AND MANUFACTURING METHOD FOR DETECTION DEVICE
    5.
    发明申请
    DETECTION DEVICE, MEASUREMENT APPARATUS, AND MANUFACTURING METHOD FOR DETECTION DEVICE 审中-公开

    公开(公告)号：US20190293589A1

    公开(公告)日：2019-09-26

    申请号：US16285279

    申请日：2019-02-26

    申请人： FUJITSU LIMITED

    发明人： Satoru Momose ,  Michio USHIGOME ,  Osamu Tsuboi

    IPC分类号： G01N27/12 ,  H01L51/00

    摘要： A detection device includes, a first electrode, a second electrode, a conductor including at least a surface portion made of gold or platinum group metal, which extends from the first electrode to the second electrode so as to make an electric conduction between the first electrode and the second electrode, and a p-type semiconductor provided between the surface portion of the conductor and at least one of the first electrode and the second electrode so as to make an electric connection between the surface portion of the conductor and at least one of the first electrode and the second electrode.

    METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION ELEMENT
    7.
    发明申请
    METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION ELEMENT 审中-公开
    制造光电转换元件和光电转换元件的方法

    公开(公告)号：US20130298986A1

    公开(公告)日：2013-11-14

    申请号：US13946126

    申请日：2013-07-19

    申请人： FUJITSU LIMITED

    发明人： Satoru Momose

    IPC分类号： H01L51/42

    CPC分类号： H01L51/4253 ,  H01L51/002 ,  H01L51/0036 ,  H01L2251/308 ,  Y02E10/549 ,  Y02P70/521

    摘要： A method for manufacturing a photoelectric conversion element includes: forming a hole injection layer by applying a solvent containing a first p-type organic semiconductor and an oxidant capable of oxidizing the first p-type organic semiconductor on a transparent substrate and a transparent electrode provided on the transparent substrate and by removing the solvent by drying to oxidize the first p-type organic semiconductor with the oxidant; forming a photoelectric conversion layer by applying a solvent containing an n-type organic semiconductor and a second p-type organic semiconductor on the hole injection layer and by removing the solvent by drying; and forming a metal electrode using a metal layer on the photoelectric conversion layer.

    摘要翻译： 一种光电转换元件的制造方法，其特征在于，在透明基板上涂布含有第一p型有机半导体和能够氧化第一p型有机半导体的氧化剂的溶剂，形成空穴注入层， 透明基板，并通过干燥除去溶剂以氧化第一p型有机半导体; 通过在空穴注入层上涂布含有n型有机半导体和第二p型有机半导体的溶剂并通过干燥除去溶剂来形成光电转换层; 以及在所述光电转换层上使用金属层形成金属电极。

    GAS ANALYZER AND GAS ANALYSIS METHOD
    10.
    发明申请
    GAS ANALYZER AND GAS ANALYSIS METHOD 审中-公开

    公开(公告)号：US20170299536A1

    公开(公告)日：2017-10-19

    申请号：US15466384

    申请日：2017-03-22

    申请人： FUJITSU LIMITED

    发明人： Osamu Tsuboi ,  Satoru Momose ,  Michio USHIGOME ,  Kazuaki Karasawa ,  Ryozo Takasu

    IPC分类号： G01N27/12 ,  G01N33/497

    CPC分类号： G01N27/125 ,  G01N27/123 ,  G01N33/497

    摘要： A gas analyzer including: a chamber; a first gas sensor provided in the chamber and including a first gas sensitive member; a second gas sensor provided in the chamber and including a second gas sensitive member; and a detector that detects each of resistance changes of the first and the second gas sensitive members; wherein the first gas sensitive member is an oxide semiconductor mainly composed of at least one of Sn, W, Zn and In or a semiconductor mainly composed of C, and the second gas sensitive member is mainly composed of a halide or an oxide of Cu or Ag.