公开(公告)号：US10910474B2

公开(公告)日：2021-02-02

申请号：US16470545

申请日：2017-12-18

申请人： FURUKAWA CO., LTD.

发明人： Yasunobu Sumida ,  Yasuharu Fujiyama ,  Hiroki Goto ,  Takuya Nakagawa ,  Yujiro Ishihara

IPC分类号： H01L29/04 ,  H01L29/20 ,  C30B29/38 ,  H01L21/02

摘要： A method for manufacturing a group III nitride semiconductor substrate includes a preparation step S10 for preparing a group III nitride semiconductor substrate having a sapphire substrate having a semipolar plane as a main surface, and a group III nitride semiconductor layer positioned over the main surface, in which a direction of the sapphire substrate and a direction of the group III nitride semiconductor layer do not intersect at right angles in a plan view in a direction perpendicular to the main surface, and a growth step S20 for epitaxially growing a group III nitride semiconductor over the group III nitride semiconductor layer.

公开(公告)号：US11680339B2

公开(公告)日：2023-06-20

申请号：US16497837

申请日：2018-03-19

申请人： FURUKAWA CO., LTD.

发明人： Yujiro Ishihara ,  Hiroki Goto ,  Shoichi Fuda ,  Tomohiro Kobayashi ,  Hitoshi Sasaki

IPC分类号： C30B29/40 ,  C23C16/34 ,  C30B25/18 ,  H01L21/02 ,  H01L21/78 ,  C01B21/06

CPC分类号： C30B29/406 ,  C23C16/34 ,  C30B25/183 ,  C30B25/186 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02458 ,  H01L21/02694 ,  H01L21/7813 ,  C01B21/06 ,  Y10T428/219

摘要： There is provided a method of manufacturing a group III nitride semiconductor substrate including: a fixing step S10 of fixing abase substrate, which includes a group III nitride semiconductor layer having a semipolar plane as a main surface, to a susceptor; a first growth step S11 of forming a first growth layer by growing a group III nitride semiconductor over the main surface of the group III nitride semiconductor layer in a state in which the base substrate is fixed to the susceptor using an HVPE method; a cooling step S12 of cooling a laminate including the susceptor, the base substrate, and the first growth layer; and a second growth step S13 of forming a second growth layer by growing a group III nitride semiconductor over the first growth layer in a state in which the base substrate is fixed to the susceptor using the HVPE method.

公开(公告)号：US11662374B2

公开(公告)日：2023-05-30

申请号：US16493659

申请日：2018-03-09

申请人： FURUKAWA CO., LTD.

发明人： Hiroki Goto ,  Yujiro Ishihara

IPC分类号： C30B29/40 ,  G01R31/265

CPC分类号： G01R31/2656 ,  C30B29/403

摘要： According to the present invention, there is provided a group III nitride semiconductor substrate (free-standing substrate 30) that is formed of group III nitride semiconductor crystals. Both exposed first and second main surfaces in a relationship of top and bottom are semipolar planes. A variation coefficient of an emission wavelength of each of the first and second main surfaces, which is calculated by dividing a standard deviation of an emission wavelength by an average value of the emission wavelength, is 0.05% or less in photoluminescence (PL) measurement in which mapping is performed in units of an area of 1 mm2 by emitting helium-cadmium (He—Cd) laser, which has a wavelength of 325 nm and an output of 10 mW or more and 40 mW or less, at room temperature. In a case where devices are manufactured over the free-standing substrate 30, variations in quality among the devices are suppressed.

公开(公告)号：US10947641B2

公开(公告)日：2021-03-16

申请号：US16497842

申请日：2018-03-19

申请人： FURUKAWA CO., LTD.

发明人： Hiroki Goto ,  Yujiro Ishihara

IPC分类号： C30B29/40 ,  C23C16/02 ,  C23C16/30 ,  C30B25/18 ,  C30B29/68 ,  H01L29/20

摘要： There is provided a group III nitride semiconductor substrate (free-standing substrate (30)) that is formed of a group III nitride semiconductor crystal and has a thickness of 300 μm or more and 1000 μm or less. Both exposed first and second main surfaces in a relationship of top and bottom are semipolar planes. A difference in a half width of an X-ray rocking curve (XRC) measured by making X-rays incident on each of the first and second main surfaces in parallel to an m axis of the group III nitride semiconductor crystal is 500 arcsec or less.

公开(公告)号：US20240239659A1

公开(公告)日：2024-07-18

申请号：US18561885

申请日：2022-05-25

申请人： FURUKAWA CO., LTD.

发明人： Hiroki Goto ,  Kazutomi Yamamoto

IPC分类号： C01B17/22

CPC分类号： C01B17/22

摘要： A lithium sulfide producing device (1-1) of the present invention is a lithium sulfide producing device for producing lithium sulfide by reacting hydrogen sulfide with lithium hydroxide, the lithium sulfide producing device including a reactor (1-3) having a lithium hydroxide filling part (1-2) inside, a heating unit for heating lithium hydroxide, and a hydrogen sulfide supply member connected to the reactor (1-3).