-
1.发明申请SEMICONDUCTOR OPTICAL ELEMENT, SEMICONDUCTOR LASER ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL ELEMENT AND SEMICONDUCTOR LASER ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LASER MODULE AND SEMICONDUCTOR ELEMENT 审中-公开半导体光学元件，半导体激光器元件以及制造半导体光学元件和半导体激光元件的方法以及制造半导体激光器模块和半导体元件的方法公开(公告)号：US20150349495A1
公开(公告)日：2015-12-03
申请号：US14825660
申请日：2015-08-13
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Kouhei KINUGAWA , Hidehiro TANIGUCHI , Masafumi TAJIMA
CPC classification number: H01S5/2072 , G02B6/122 , G02B6/1342 , H01S5/0287 , H01S5/0421 , H01S5/162 , H01S5/22 , H01S5/2205 , H01S5/3054
Abstract: A semiconductor optical element includes a semiconductor layer portion that includes an optical waveguide layer. The semiconductor layer portion contains a first impurity having a function of suppressing atomic vacancy diffusion and a second impurity having a function of promoting atomic vacancy diffusion, between a topmost surface of the semiconductor layer portion and the optical waveguide layer. The semiconductor layer portion includes two or more regions that extend in a deposition direction with different contents of at least one of the impurities. At least one of the two or more regions contains both the first impurity and the second impurity. The two or more regions have different degrees of disordering in the optical waveguide layer achieved through atomic vacancy diffusion and different band gap energies of the optical waveguide layer.
Abstract translation: 半导体光学元件包括包括光波导层的半导体层部分。 在半导体层部分的最上表面和光波导层之间，半导体层部分包含具有抑制原子空位扩散的功能的第一杂质和具有促进原子空位扩散的功能的第二杂质。 半导体层部分包括在沉积方向上延伸至少一种杂质的不同含量的两个或更多个区域。 两个或更多个区域中的至少一个区域包含第一杂质和第二杂质。 两个或更多个区域在通过原子空位扩散和光波导层的不同带隙能量实现的光波导层中具有不同程度的无序性。
-
公开(公告)号：US20180316156A1
公开(公告)日：2018-11-01
申请号：US16013987
申请日：2018-06-21
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Yutaka OHKI , Masafumi TAJIMA
Abstract: A method of manufacturing a semiconductor laser element includes: a cleaning process of holding a semiconductor light emission element that emits light from a facet thereof in a plasma sputtering device in which a target is covered with quartz, and cleaning the facet by irradiating the facet with plasma in the plasma sputtering device; and a dielectric film formation process of transporting the cleaned semiconductor light emission element to a deposition device without exposing the semiconductor light emission element to an atmosphere, and forming a dielectric film on the cleaned facet in the deposition device.
-
Search Results
2
records
(took 0.014 seconds)
