公开(公告)号：US20150349495A1

公开(公告)日：2015-12-03

申请号：US14825660

申请日：2015-08-13

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Kouhei KINUGAWA ,  Hidehiro TANIGUCHI ,  Masafumi TAJIMA

IPC: H01S5/20 ,  G02B6/122 ,  H01S5/042 ,  G02B6/134 ,  H01S5/22 ,  H01S5/16

CPC classification number: H01S5/2072 ,  G02B6/122 ,  G02B6/1342 ,  H01S5/0287 ,  H01S5/0421 ,  H01S5/162 ,  H01S5/22 ,  H01S5/2205 ,  H01S5/3054

Abstract: A semiconductor optical element includes a semiconductor layer portion that includes an optical waveguide layer. The semiconductor layer portion contains a first impurity having a function of suppressing atomic vacancy diffusion and a second impurity having a function of promoting atomic vacancy diffusion, between a topmost surface of the semiconductor layer portion and the optical waveguide layer. The semiconductor layer portion includes two or more regions that extend in a deposition direction with different contents of at least one of the impurities. At least one of the two or more regions contains both the first impurity and the second impurity. The two or more regions have different degrees of disordering in the optical waveguide layer achieved through atomic vacancy diffusion and different band gap energies of the optical waveguide layer.

Abstract translation: 半导体光学元件包括包括光波导层的半导体层部分。 在半导体层部分的最上表面和光波导层之间，半导体层部分包含具有抑制原子空位扩散的功能的第一杂质和具有促进原子空位扩散的功能的第二杂质。 半导体层部分包括在沉积方向上延伸至少一种杂质的不同含量的两个或更多个区域。 两个或更多个区域中的至少一个区域包含第一杂质和第二杂质。 两个或更多个区域在通过原子空位扩散和光波导层的不同带隙能量实现的光波导层中具有不同程度的无序性。

公开(公告)号：US20130044781A1

公开(公告)日：2013-02-21

申请号：US13658836

申请日：2012-10-24

Applicant: Furukawa Electric Co., Ltd.

Inventor： Hidehiro TANIGUCHI ,  Kouhei KINUGAWA

IPC: H01S5/20 ,  H01L21/02

CPC classification number: H01S5/162 ,  B82Y20/00 ,  H01S5/2072 ,  H01S5/22 ,  H01S5/2202 ,  H01S5/2231 ,  H01S5/34313

Abstract: A semiconductor laser element includes a substrate of a first conduction type and a layered semiconductor structure formed on the substrate. The layered semiconductor structure includes a first semiconductor layer of the first conduction type formed on the substrate, an active layer formed on the first semiconductor layer, and a second semiconductor layer of a second conduction type formed on the active layer, the second conduction type being opposite to the first conduction type. The first semiconductor layer, the active layer, and the second semiconductor layer include a non-window region through which a light emitted from the active layer passes and a window region surrounding the non-window region. Band gap energy of the active layer is larger in the window region than in the non-window region. The second semiconductor layer includes a current confinement layer.

Abstract translation: 半导体激光元件包括形成在基板上的第一导电型基板和层状半导体结构。 层状半导体结构包括在基板上形成的第一导电类型的第一半导体层，形成在第一半导体层上的有源层和形成在有源层上的第二导电类型的第二半导体层，第二导电类型为 与第一导电类型相反。 第一半导体层，有源层和第二半导体层包括从有源层发射的光通过的非窗口区域和围绕非窗口区域的窗口区域。 活性层的带隙能量在窗口区域比在非窗口区域中更大。 第二半导体层包括电流限制层。

公开(公告)号：US20150180203A1

公开(公告)日：2015-06-25

申请号：US14622363

申请日：2015-02-13

Applicant: Furukawa Electric Co., Ltd.

Inventor： Kouhei KINUGAWA ,  Hidehiro Taniguchi ,  Masafumi Tajima ,  Hirotatsu Ishii ,  Takeshi Namegaya

IPC: H01S5/16 ,  H01S5/026 ,  H01S5/30 ,  H01S5/20

CPC classification number: H01S5/162 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/0262 ,  H01S5/2031 ,  H01S5/2068 ,  H01S5/2072 ,  H01S5/22 ,  H01S5/222 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/34313

Abstract: A semiconductor optical element includes a semiconductor layer portion that includes an optical waveguide layer. The semiconductor layer portion contains a first impurity having a function of suppressing atomic vacancy diffusion and a second impurity having a function of promoting atomic vacancy diffusion, between a topmost surface of the semiconductor layer portion and the optical waveguide layer. The semiconductor layer portion includes two or more regions that extend in a deposition direction. At least one of the two or more regions contains both the first impurity and the second impurity. The two or more regions have different degrees of disordering in the optical waveguide layer achieved through atomic vacancy diffusion and different band gap energies of the optical waveguide layer.

Abstract translation: 半导体光学元件包括包括光波导层的半导体层部分。 在半导体层部分的最上表面和光波导层之间，半导体层部分包含具有抑制原子空位扩散的功能的第一杂质和具有促进原子空位扩散的功能的第二杂质。 半导体层部分包括沿沉积方向延伸的两个或更多个区域。 两个或更多个区域中的至少一个区域包含第一杂质和第二杂质。 两个或更多个区域在通过原子空位扩散和光波导层的不同带隙能量实现的光波导层中具有不同程度的无序性。

公开(公告)号：US20130322477A1

公开(公告)日：2013-12-05

申请号：US13963620

申请日：2013-08-09

Applicant: Furukawa Electric Co., Ltd.

Inventor： Kouhei KINUGAWA ,  Hidehiro Taniguchi

IPC: H01S5/20

CPC classification number: H01S5/20 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/02476 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/2086 ,  H01S5/22 ,  H01S5/222 ,  H01S5/34313 ,  H01S2301/176

Abstract: An optical device includes a ridge semiconductor laser element formed on a substrate, a first insulating film coating a lateral wall portion of a ridge structure of the ridge semiconductor laser element, and a second insulating film coating the ridge structure from above the first insulating film in an end portion region of the ridge structure. The second insulating film has a density lower than a density of the first insulating film.

Abstract translation: 光学装置包括形成在基板上的脊状半导体激光元件，涂覆脊状半导体激光元件的脊部结构的侧壁部的第一绝缘膜，以及从第一绝缘膜的上方涂覆脊状结构的第二绝缘膜 脊结构的端部区域。 第二绝缘膜的密度低于第一绝缘膜的密度。