公开(公告)号：US20140314113A1

公开(公告)日：2014-10-23

申请号：US14322401

申请日：2014-07-02

Applicant: Furukawa Electric Co., Ltd.

Inventor： Yutaka OHKI ,  Satoshi ARAKAWA ,  Shunsuke OKUYAMA ,  Masaki FUNABASHI ,  Junji YOSHIDA ,  Hidehiro TANIGUCHI

IPC: H01S5/20 ,  H01S5/022

CPC classification number: H01S5/20 ,  H01S5/0014 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/1064 ,  H01S5/227 ,  H01S2301/185

Abstract: A semiconductor laser outputs a laser light from an output facet of a waveguide having an index waveguide structure, via a lens system. The waveguide includes, in order from a rear facet opposite to the output facet, a first narrow portion, a wide portion that is wider than the first narrow portion, a second narrow portion narrower than the wide portion, a first tapered portion formed between the first narrow portion and the wide portion, which expands toward the wide portion, and a second tapered portion formed between the wide portion and the second narrow portion, which narrows toward the second narrow portion. Each of the first narrow portion, the wide portion, and the second narrow portion has a uniform width.

Abstract translation: 半导体激光器经由透镜系统从具有折射率波导结构的波导的输出面输出激光。 波导包括从与输出小面相对的后小面的顺序，包括比第一窄部宽的第一狭窄部分，比宽部分窄的第二窄部分，形成在第一窄部分之间的第一锥形部分 第一窄部分和朝向宽部分扩展的宽部分，以及形成在宽部分和第二窄部分之间的朝向第二窄部分变窄的第二锥形部分。 第一狭窄部分，宽部分和第二窄部分中的每一个具有均匀的宽度。

公开(公告)号：US20160276804A1

公开(公告)日：2016-09-22

申请号：US14460090

申请日：2014-08-14

Applicant: Furukawa Electric Co., Ltd.

Inventor： Hidehiro TANIGUCHI ,  Hirotatsu Ishii ,  Takeshi Namegaya

IPC: H01S5/16 ,  H01S5/30 ,  H01S5/343 ,  H01S5/20

CPC classification number: H01S5/164 ,  H01S5/0421 ,  H01S5/162 ,  H01S5/168 ,  H01S5/2072 ,  H01S5/3054 ,  H01S5/3223 ,  H01S5/3427

Abstract: A semiconductor laser element includes: a window region including a disordered portion formed by diffusion of a group-III vacancy, the diffusion promoted by providing on the window region a promoting film that absorbs a predetermined atom; a non-window region including an active layer of a quantum well structure; and a difference equal to or larger than 50 meV between an energy band gap in the window region and an energy band gap in the non-window region.

Abstract translation: 半导体激光元件包括：窗口区域，其包括通过III族空位扩散形成的无序部分，通过在窗口区域上提供吸收预定原子的促进膜促进的扩散; 包括量子阱结构的有源层的非窗口区域; 并且在窗口区域中的能带间隙和非窗口区域中的能带间隙之间的差异等于或大于50meV。

公开(公告)号：US20160181761A1

公开(公告)日：2016-06-23

申请号：US15059304

申请日：2016-03-03

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Hidehiro TANIGUCHI ,  Yutaka OHKI

IPC: H01S5/042 ,  H01S5/343 ,  H01S5/20 ,  H01S5/30

CPC classification number: H01S5/0421 ,  B82Y20/00 ,  H01L33/005 ,  H01L33/305 ,  H01S5/028 ,  H01S5/2004 ,  H01S5/2068 ,  H01S5/2072 ,  H01S5/22 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/343 ,  H01S5/34313 ,  H01S2304/04

Abstract: Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.

Abstract translation: 提供一种包括具有第一导电类型的半导体衬底的半导体光器件; 具有淀积在半导体衬底上方的第一导电类型的第一包层; 活性层 具有第二导电类型的第二覆层; 和接触层。 有源层包括通过空位的扩散而无序的窗口部分和具有比窗口部分更少的无序的非窗口部分，并且接触层包括位于第一区域之下并且具有更大亲和力的第一区域和第二区域 用于氢气比第一区域。

公开(公告)号：US20170365578A1

公开(公告)日：2017-12-21

申请号：US15631541

申请日：2017-06-23

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Teruyuki NAKAMURA ,  Akira SEKINO ,  Hidehiro TANIGUCHI

IPC: H01L23/00 ,  H01S5/10 ,  H01S5/022

CPC classification number: H01L24/75 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/751 ,  H01L2224/7525 ,  H01L2224/75251 ,  H01L2224/75272 ,  H01L2224/75281 ,  H01L2224/75283 ,  H01L2224/7565 ,  H01L2224/75744 ,  H01L2224/75745 ,  H01L2224/75756 ,  H01L2224/75804 ,  H01L2224/75824 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83065 ,  H01L2224/83075 ,  H01L2224/83192 ,  H01L2224/8321 ,  H01L2224/8322 ,  H01L2224/8323 ,  H01L2224/83411 ,  H01L2224/83444 ,  H01L2224/83815 ,  H01L2924/1011 ,  H01L2924/12042 ,  H01S5/02256 ,  H01S5/1039 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/0105 ,  H01L2924/00012

Abstract: A die bonding apparatus includes: a mounting base including a mounting area on which a first member is mounted; a heater arranged below the mounting base; a side wall configured to surround the mounting area; a collet configured to hold a second member by vacuum-chucking at an end portion; a lid including a hole, the lid being mounted on the side wall; a moving structure configured to move the collet to transport the second member held by the collet through the hole for bonding the second member to the first member; and a gas-supplying tube arranged on the side wall and configured to supply a heating gas to a heating space formed by the side wall and the lid. The lid contains a material capable of: reflecting an infrared radiation caused by the heater and the heating gas; or absorbing and re-radiating the infrared radiation.

公开(公告)号：US20140072007A1

公开(公告)日：2014-03-13

申请号：US14078547

申请日：2013-11-13

Applicant: Furukawa Electric Co., Ltd.

Inventor： Hidehiro TANIGUCHI ,  Yutaka OHKI

IPC: H01S5/00

CPC classification number: H01S5/005 ,  G02B6/4202 ,  G02B6/4248 ,  H01S5/022 ,  H01S5/02252 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02484 ,  H01S5/02492 ,  H01S5/146 ,  H01S5/147 ,  H01S2301/16

Abstract: To achieve stable multimode output even when driven by a drive current near a threshold value, provided is a laser apparatus comprising a semiconductor laser element; a wavelength selecting element that performs laser oscillation by forming a resonator between itself and a reflective surface of the semiconductor laser element to output oscillated laser light; and an optical system that is optically coupled to an emission surface of the semiconductor laser element with a coupling efficiency η and inputs to the wavelength selecting element light output from the emission surface. The optical system causes a value that is correlated with a minimum light output within a linear light output region in which light output is linear with respect to an injection current injected to the semiconductor laser element to be less than this value occurring when the coupling efficiency η is at a maximum.

Abstract translation: 即使在驱动电流接近阈值驱动的情况下也能实现稳定的多模输出，提供了包括半导体激光元件的激光装置; 波长选择元件，通过在其半导体激光元件的自身与反射表面之间形成谐振器来执行激光振荡，以输出振荡的激光; 以及光学系统，其以耦合效率ηa和与从发射表面输出的波长选择元件光的输入光学耦合到半导体激光元件的发射表面。 光学系统引起与在相对于注入到半导体激光元件的注入电流的光输出为线性的线性光输出区域内的最小光输出相关的值小于当耦合效率eta 是最大的。

公开(公告)号：US20150349495A1

公开(公告)日：2015-12-03

申请号：US14825660

申请日：2015-08-13

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Kouhei KINUGAWA ,  Hidehiro TANIGUCHI ,  Masafumi TAJIMA

IPC: H01S5/20 ,  G02B6/122 ,  H01S5/042 ,  G02B6/134 ,  H01S5/22 ,  H01S5/16

CPC classification number: H01S5/2072 ,  G02B6/122 ,  G02B6/1342 ,  H01S5/0287 ,  H01S5/0421 ,  H01S5/162 ,  H01S5/22 ,  H01S5/2205 ,  H01S5/3054

Abstract: A semiconductor optical element includes a semiconductor layer portion that includes an optical waveguide layer. The semiconductor layer portion contains a first impurity having a function of suppressing atomic vacancy diffusion and a second impurity having a function of promoting atomic vacancy diffusion, between a topmost surface of the semiconductor layer portion and the optical waveguide layer. The semiconductor layer portion includes two or more regions that extend in a deposition direction with different contents of at least one of the impurities. At least one of the two or more regions contains both the first impurity and the second impurity. The two or more regions have different degrees of disordering in the optical waveguide layer achieved through atomic vacancy diffusion and different band gap energies of the optical waveguide layer.

Abstract translation: 半导体光学元件包括包括光波导层的半导体层部分。 在半导体层部分的最上表面和光波导层之间，半导体层部分包含具有抑制原子空位扩散的功能的第一杂质和具有促进原子空位扩散的功能的第二杂质。 半导体层部分包括在沉积方向上延伸至少一种杂质的不同含量的两个或更多个区域。 两个或更多个区域中的至少一个区域包含第一杂质和第二杂质。 两个或更多个区域在通过原子空位扩散和光波导层的不同带隙能量实现的光波导层中具有不同程度的无序性。

公开(公告)号：US20150146757A1

公开(公告)日：2015-05-28

申请号：US14614561

申请日：2015-02-05

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Yutaka OHKI ,  Satoshi ARAKAWA ,  Shunsuke OKUYAMA ,  Masaki FUNABASHI ,  Junji YOSHIDA ,  Hidehiro TANIGUCHI

IPC: H01S5/026

CPC classification number: H01S3/094003 ,  H01S5/0014 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/1064 ,  H01S5/227 ,  H01S2301/185

Abstract: A semiconductor laser module includes: a semiconductor laser outputting a laser light from an output-facet side of a waveguide which has a first narrow portion identical in width, a wide portion wider than the first narrow portion, a second narrow portion narrower than the wide portion, a first tapered portion between the first narrow portion and the wide portion and increasing in width toward the wide portion, and a second tapered portion between the wide portion and the second narrow portion and decreasing in width toward the second narrow portion; and an optical fiber to which the laser light is input has an optical-feedback unit reflecting a predetermined wavelength of light. The semiconductor laser is enclosed in a package with one end of the optical fiber. The optical-feedback unit has a first optical-feedback unit set at a predetermined reflection center wavelength determining an oscillation wavelength and a second optical-feedback unit.

Abstract translation: 半导体激光器模块包括：半导体激光器，其输出来自波导的输出侧面的激光，该激光具有宽度相同的第一窄部分，宽于第一窄部分的宽部分，比宽度窄的第二窄部分 在所述第一窄部与所述宽部之间的第一锥形部分，朝向所述宽部扩大宽度，以及在所述宽部与所述第二窄部之间的第二锥形部，并且朝向所述第二狭窄部宽度减小; 并且输入激光的光纤具有反映预定波长的光的光学反馈单元。 半导体激光器被封装在具有光纤的一端的封装中。 光反馈单元具有设置在确定振荡波长的预定反射中心波长的第一光反馈单元和第二光反馈单元。

公开(公告)号：US20200243477A1

公开(公告)日：2020-07-30

申请号：US16849564

申请日：2020-04-15

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Teruyuki NAKAMURA ,  Akira SEKINO ,  Hidehiro TANIGUCHI

IPC: H01L23/00 ,  H01S5/10 ,  H01S5/022

Abstract: A die bonding apparatus includes: a mounting base including a mounting area on which a first member is mounted; a heater arranged below the mounting base; a side wall configured to surround the mounting area; a collet configured to hold a second member by vacuum-chucking at an end portion; a lid including a hole, the lid being mounted on the side wall; a moving structure configured to move the collet to transport the second member held by the collet through the hole for bonding the second member to the first member; and a gas-supplying tube arranged on the side wall and configured to supply a heating gas to a heating space formed by the side wall and the lid. The lid contains a material capable of: reflecting an infrared radiation caused by the heater and the heating gas; or absorbing and re-radiating the infrared radiation.

公开(公告)号：US20170149214A1

公开(公告)日：2017-05-25

申请号：US15426256

申请日：2017-02-07

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Hidehiro TANIGUCHI

IPC: H01S5/30 ,  H01S5/042

CPC classification number: H01S5/162 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3209 ,  H01S5/4031

Abstract: A semiconductor device includes: a semiconductor layered structure including an active layer, a first region including a part of the active layer and extending in a layered direction, a second region including at least a part of an end portion of the active layer and extending in the layered direction, disordering of the second region being higher than the first region, and a third region including a portion of the active layer between the first region and the second region and extending in the layered direction, disordering of the third region being higher than the first region and lower than the second region; and an electrode configured to inject an electric current to the active layer.

公开(公告)号：US20140027809A1

公开(公告)日：2014-01-30

申请号：US14045550

申请日：2013-10-03

Applicant: FURUKAWA ELECTRIC CO., LTD

Inventor： Hidehiro TANIGUCHI ,  Yutaka OHKI

IPC: H01L33/30 ,  H01L33/00

CPC classification number: H01S5/0421 ,  B82Y20/00 ,  H01L33/005 ,  H01L33/305 ,  H01S5/028 ,  H01S5/2004 ,  H01S5/2068 ,  H01S5/2072 ,  H01S5/22 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/343 ,  H01S5/34313 ,  H01S2304/04

Abstract: Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.

Abstract translation: 提供一种包括具有第一导电类型的半导体衬底的半导体光器件; 具有淀积在半导体衬底上方的第一导电类型的第一包层; 活性层 具有第二导电类型的第二覆层; 和接触层。 有源层包括通过空位的扩散而无序的窗口部分和具有比窗口部分更少的无序的非窗口部分，并且接触层包括位于第一区域之下并且具有更大亲和力的第一区域和第二区域 用于氢气比第一区域。