公开(公告)号：US20140070392A1

公开(公告)日：2014-03-13

申请号：US14026181

申请日：2013-09-13

申请人： Fairchild Semiconductor Corporation

发明人： Chung-Lin Wu ,  Steven Sapp ,  Bigildis Dosdos ,  Suresh Belani ,  Sunggeun Yoon

IPC分类号： H01L23/495 ,  H01L21/56

CPC分类号： H01L23/495 ,  H01L21/563 ,  H01L23/3121 ,  H01L23/4334 ,  H01L23/49524 ,  H01L23/49548 ,  H01L23/49562 ,  H01L24/36 ,  H01L24/37 ,  H01L24/40 ,  H01L2224/371 ,  H01L2224/40245 ,  H01L2924/00014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/84

摘要： A first embodiment is a common drain+clip 20. It has a conventional drain contact on its bottom surface and is flip chip mounted on a half-etched leadframe 40 which has external source, gate and drain contacts connected to the sources, gate and common drain of the die 20. Common drain clip 50 connects the drain 30 to external contacts between opposite gate contacts. A second embodiment is a direct drain embodiment+heatslug. The device 80 has a top drain contact 36 that extends to the common drain 30 across the bottom of the die which is flip chip mounted to a half-etched leadframe having external source, gate and drain contacts connected to the sources, gates and common drain of the die 80.

摘要翻译： 第一实施例是公共漏极+夹具20.其底表面上具有传统的漏极接触，并且是倒装芯片安装在半蚀刻引线框架40上，半导体引线框架40具有连接到源极，门和公共端的外部源极，栅极和漏极触点 管芯20的漏极。公共漏极夹50将漏极30连接到相对的栅极触点之间的外部触点。 第二实施例是直接排水实施例+热塞。 器件80具有顶部漏极接触36，其跨越管芯的底部延伸到公共漏极30，其倒装芯片安装到具有连接到源极的外部源极，栅极和漏极触点的栅极和公共漏极的半蚀刻引线框架 的模具80。

公开(公告)号：US09379045B2

公开(公告)日：2016-06-28

申请号：US14026181

申请日：2013-09-13

申请人： Fairchild Semiconductor Corporation

发明人： Chung-Lin Wu ,  Steven Sapp ,  Bigildis Dosdos ,  Suresh Belani ,  Sunggeun Yoon

IPC分类号： H01L23/495 ,  H01L21/56 ,  H01L23/433 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L23/495 ,  H01L21/563 ,  H01L23/3121 ,  H01L23/4334 ,  H01L23/49524 ,  H01L23/49548 ,  H01L23/49562 ,  H01L24/36 ,  H01L24/37 ,  H01L24/40 ,  H01L2224/371 ,  H01L2224/40245 ,  H01L2924/00014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/84

摘要： A first embodiment is a common drain+clip 20. It has a conventional drain contact on its bottom surface and is flip chip mounted on a half-etched leadframe 40 which has external source, gate and drain contacts connected to the sources, gate and common drain of the die 20. Common drain clip 50 connects the drain 30 to external contacts between opposite gate contacts. A second embodiment is a direct drain embodiment+heatslug. The device 80 has a top drain contact 36 that extends to the common drain 30 across the bottom of the die which is flip chip mounted to a half-etched leadframe having external source, gate and drain contacts connected to the sources, gates and common drain of the die 80.

摘要翻译： 第一实施例是公共漏极+夹具20.其底表面上具有传统的漏极接触，并且是倒装芯片安装在半蚀刻引线框架40上，半导体引线框架40具有连接到源极，门和公共端的外部源极，栅极和漏极触点 管芯20的漏极。公共漏极夹50将漏极30连接到相对的栅极触点之间的外部触点。 第二实施例是直接排水实施例+热塞。 器件80具有顶部漏极接触36，其跨越管芯的底部延伸到公共漏极30，其倒装芯片安装到具有连接到源极的外部源极，栅极和漏极触点的栅极和公共漏极的半蚀刻引线框架 的模具80。