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1.发明申请MEMS DEVICES HAVING SUPPORT STRUCTURES WITH SUBSTANTIALLY VERTICAL SIDEWALLS AND METHODS FOR FABRICATING THE SAME 失效具有支撑结构的具有主要垂直平面的MEMS装置及其制造方法公开(公告)号：US20100202039A1
公开(公告)日：2010-08-12
申请号：US12766702
申请日：2010-04-23
申请人： Lior Kogut , Chengbin Qiu , Chun-Ming Wang , Stephen Zee , Fan Zhong
发明人： Lior Kogut , Chengbin Qiu , Chun-Ming Wang , Stephen Zee , Fan Zhong
CPC分类号： G02B26/0841 , B81B3/0072 , B81B2201/047 , B81B2203/0163 , B81B2203/019 , B81B2203/0307 , B81B2203/053 , B81C1/00142 , B81C1/00666 , B81C2201/0167 , G02B26/001 , Y10S359/90
摘要： Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.
摘要翻译： MEMS器件的实施例包括具有基本垂直侧壁的支撑结构。 通过沉积自平面化材料或通过电镀工艺形成某些支撑结构。 通过间隔物蚀刻形成其它支撑结构。 其它MEMS器件包括至少部分在可移动层下方的支撑结构，其中可移动层下面的支撑结构的部分包括凸形侧壁。 在另外的实施例中，支撑结构的一部分延伸穿过可移动层中的孔并且在可移动层的至少一部分上方延伸。
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2.发明授权MEMS devices having support structures with substantially vertical sidewalls and methods for fabricating the same 失效具有基本垂直侧壁的支撑结构的MEMS器件及其制造方法公开(公告)号：US07704773B2
公开(公告)日：2010-04-27
申请号：US11506600
申请日：2006-08-18
申请人： Lior Kogut , Chengbin Qiu , Chun-Ming Wang , Stephen Zee , Fan Zhong
发明人： Lior Kogut , Chengbin Qiu , Chun-Ming Wang , Stephen Zee , Fan Zhong
IPC分类号： H01L21/00
CPC分类号： G02B26/0841 , B81B3/0072 , B81B2201/047 , B81B2203/0163 , B81B2203/019 , B81B2203/0307 , B81B2203/053 , B81C1/00142 , B81C1/00666 , B81C2201/0167 , G02B26/001 , Y10S359/90
摘要： Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.
摘要翻译： MEMS器件的实施例包括具有基本垂直侧壁的支撑结构。 通过沉积自平面化材料或通过电镀工艺形成某些支撑结构。 通过间隔物蚀刻形成其它支撑结构。 其它MEMS器件包括至少部分在可移动层下方的支撑结构，其中可移动层下面的支撑结构的部分包括凸形侧壁。 在另外的实施例中，支撑结构的一部分延伸穿过可移动层中的孔并且在可移动层的至少一部分上方延伸。
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公开(公告)号：US20070285761A1
公开(公告)日：2007-12-13
申请号：US11656681
申请日：2007-01-23
申请人： Fan Zhong , Chun-Ming Wang , Stephen Zee
发明人： Fan Zhong , Chun-Ming Wang , Stephen Zee
IPC分类号： G02B26/00
CPC分类号： G02B26/001
摘要： MEMS devices are fabricated by a method that involves forming an optical element (e.g., etalon) over a substrate and then forming a light modulating element (e.g., interferometric modulator) over the optical element. In an embodiment, a support structure for the light modulating element is aligned with the underlying optical element to thereby alter the appearance of the support structure to a viewer. Such an optical element is separated from the support structure by one or more buffer layers.
摘要翻译： 通过包括在衬底上形成光学元件（例如标准具）然后在光学元件上形成光调制元件（例如干涉式调制器）的方法制造MEMS器件。 在一个实施例中，用于光调制元件的支撑结构与下面的光学元件对准，从而将支撑结构的外观改变为观看者。 这样的光学元件通过一个或多个缓冲层与支撑结构分离。
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4.发明申请MEMS devices having support structures with substantially vertical sidewalls and methods for fabricating the same 失效具有基本垂直侧壁的支撑结构的MEMS器件及其制造方法公开(公告)号：US20070042524A1
公开(公告)日：2007-02-22
申请号：US11506600
申请日：2006-08-18
申请人： Lior Kogut , Chengbin Qiu , Chun-Ming Wang , Stephen Zee , Fan Zhong
发明人： Lior Kogut , Chengbin Qiu , Chun-Ming Wang , Stephen Zee , Fan Zhong
IPC分类号： H01L21/00
CPC分类号： G02B26/0841 , B81B3/0072 , B81B2201/047 , B81B2203/0163 , B81B2203/019 , B81B2203/0307 , B81B2203/053 , B81C1/00142 , B81C1/00666 , B81C2201/0167 , G02B26/001 , Y10S359/90
摘要： Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.
摘要翻译： MEMS器件的实施例包括具有基本垂直侧壁的支撑结构。 通过沉积自平面化材料或通过电镀工艺形成某些支撑结构。 通过间隔物蚀刻形成其它支撑结构。 其它MEMS器件包括至少部分在可移动层下方的支撑结构，其中可移动层下面的支撑结构的部分包括凸形侧壁。 在另外的实施例中，支撑结构的一部分延伸穿过可移动层中的孔并且在可移动层的至少一部分上方延伸。
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5.发明授权MEMS devices having support structures with substantially vertical sidewalls and methods for fabricating the same 失效具有基本垂直侧壁的支撑结构的MEMS器件及其制造方法公开(公告)号：US08298847B2
公开(公告)日：2012-10-30
申请号：US12766702
申请日：2010-04-23
申请人： Lior Kogut , Chun-Ming Wang , Chengbin Qui , Stephen Zee , Fan Zhong
发明人： Lior Kogut , Chun-Ming Wang , Chengbin Qui , Stephen Zee , Fan Zhong
IPC分类号： H01L21/00
CPC分类号： G02B26/0841 , B81B3/0072 , B81B2201/047 , B81B2203/0163 , B81B2203/019 , B81B2203/0307 , B81B2203/053 , B81C1/00142 , B81C1/00666 , B81C2201/0167 , G02B26/001 , Y10S359/90
摘要： Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.
摘要翻译： MEMS器件的实施例包括具有基本垂直侧壁的支撑结构。 通过沉积自平面化材料或通过电镀工艺形成某些支撑结构。 通过间隔物蚀刻形成其它支撑结构。 其它MEMS器件包括至少部分在可移动层下方的支撑结构，其中可移动层下面的支撑结构的部分包括凸形侧壁。 在另外的实施例中，支撑结构的一部分延伸穿过可移动层中的孔并且在可移动层的至少一部分上方延伸。
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公开(公告)号：US07652814B2
公开(公告)日：2010-01-26
申请号：US11656681
申请日：2007-01-23
申请人： Fan Zhong , Chun-Ming Wang , Stephen Zee
发明人： Fan Zhong , Chun-Ming Wang , Stephen Zee
IPC分类号： G02B26/00
CPC分类号： G02B26/001
摘要： MEMS devices are fabricated by a method that involves forming an optical element (e.g., etalon) over a substrate and then forming a light modulating element (e.g., interferometric modulator) over the optical element. In an embodiment, a support structure for the light modulating element is aligned with the underlying optical element to thereby alter the appearance of the support structure to a viewer. Such an optical element is separated from the support structure by one or more buffer layers.
摘要翻译： 通过包括在衬底上形成光学元件（例如标准具）然后在光学元件上形成光调制元件（例如干涉式调制器）的方法制造MEMS器件。 在一个实施例中，用于光调制元件的支撑结构与下面的光学元件对准，从而将支撑结构的外观改变为观看者。 这样的光学元件通过一个或多个缓冲层与支撑结构分离。
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7.发明授权Methods for etching layers within a MEMS device to achieve a tapered edge 失效用于蚀刻MEMS器件内的层以实现锥形边缘的方法公开(公告)号：US07660058B2
公开(公告)日：2010-02-09
申请号：US11506770
申请日：2006-08-18
申请人： Chengbin Qiu , Teruo Sasagawa , Ming-Hau Tung , Chun-Ming Wang , Stephen Zee
发明人： Chengbin Qiu , Teruo Sasagawa , Ming-Hau Tung , Chun-Ming Wang , Stephen Zee
IPC分类号： H01L21/302 , B44C1/22
CPC分类号： G02B26/0841 , B81B3/0072 , B81B2201/047 , B81B2203/0163 , B81B2203/019 , B81B2203/0307 , B81B2203/053 , B81C1/00142 , B81C1/00666 , B81C2201/0167 , G02B26/001 , Y10S359/90
摘要： Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.
摘要翻译： 某些MEMS器件包括被图案化以具有渐缩边缘的层。 用于形成具有渐缩边缘的层的一种方法包括使用蚀刻引导层。 用于形成具有锥形边缘的层的另一种方法包括沉积一层，其中上部可以比下部更快的速度进行刻蚀。 用于形成具有渐缩边缘的层的另一种方法包括使用多个迭代蚀刻。 用于形成具有锥形边缘的层的另一种方法包括使用具有包括负角度的孔的剥离掩模层，使得可以在剥离掩模层上沉积一层，并且去除掩模层，留下具有渐缩边缘的结构。
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8.发明申请Methods for etching layers within a MEMS device to achieve a tapered edge 失效用于蚀刻MEMS器件内的层以实现锥形边缘的方法公开(公告)号：US20080218840A1
公开(公告)日：2008-09-11
申请号：US11506770
申请日：2006-08-18
申请人： Chengin Qui , Teruo Sasagawa , Ming-Hau Tung , Chun-Ming Wang , Stephen Zee
发明人： Chengin Qui , Teruo Sasagawa , Ming-Hau Tung , Chun-Ming Wang , Stephen Zee
CPC分类号： G02B26/0841 , B81B3/0072 , B81B2201/047 , B81B2203/0163 , B81B2203/019 , B81B2203/0307 , B81B2203/053 , B81C1/00142 , B81C1/00666 , B81C2201/0167 , G02B26/001 , Y10S359/90
摘要： Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.
摘要翻译： 某些MEMS器件包括被图案化以具有渐缩边缘的层。 用于形成具有渐缩边缘的层的一种方法包括使用蚀刻引导层。 用于形成具有锥形边缘的层的另一种方法包括沉积一层，其中上部可以比下部更快的速度进行刻蚀。 用于形成具有渐缩边缘的层的另一种方法包括使用多个迭代蚀刻。 用于形成具有锥形边缘的层的另一种方法包括使用具有包括负角度的孔的剥离掩模层，使得可以在剥离掩模层上沉积一层，并且去除掩模层，留下具有渐缩边缘的结构。
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公开(公告)号：US20090257105A1
公开(公告)日：2009-10-15
申请号：US12101073
申请日：2008-04-10
申请人： Gang Xu , Chun-Ming Wang , Fan Zhong , Qi Luo
发明人： Gang Xu , Chun-Ming Wang , Fan Zhong , Qi Luo
IPC分类号： G02B26/00
CPC分类号： G02B5/003 , G02B5/201 , G02B26/001
摘要： A thin black mask is created using a single mask process. A dielectric layer is deposited over a substrate. An absorber layer is deposited over the dielectric layer and a reflector layer is deposited over the absorber layer. The absorber layer and the reflector layer are patterned using a single mask process.
摘要翻译： 使用单个掩码进程创建一个细黑色掩模。 介电层沉积在衬底上。 在电介质层上沉积吸收层，在吸收层上沉积反射层。 使用单个掩模工艺对吸收层和反射层进行构图。
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公开(公告)号：US07969638B2
公开(公告)日：2011-06-28
申请号：US12101073
申请日：2008-04-10
申请人： Gang Xu , Chun-Ming Wang , Fan Zhong , Qi Luo
发明人： Gang Xu , Chun-Ming Wang , Fan Zhong , Qi Luo
CPC分类号： G02B5/003 , G02B5/201 , G02B26/001
摘要： A thin black mask is created using a single mask process. A dielectric layer is deposited over a substrate. An absorber layer is deposited over the dielectric layer and a reflector layer is deposited over the absorber layer. The absorber layer and the reflector layer are patterned using a single mask process.
摘要翻译： 使用单个掩码进程创建一个细黑色掩模。 介电层沉积在衬底上。 在电介质层上沉积吸收层，在吸收层上沉积反射层。 使用单个掩模工艺对吸收层和反射层进行构图。
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