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1.发明申请MEMS devices having support structures with substantially vertical sidewalls and methods for fabricating the same 失效具有基本垂直侧壁的支撑结构的MEMS器件及其制造方法公开(公告)号：US20070042524A1
公开(公告)日：2007-02-22
申请号：US11506600
申请日：2006-08-18
申请人： Lior Kogut , Chengbin Qiu , Chun-Ming Wang , Stephen Zee , Fan Zhong
发明人： Lior Kogut , Chengbin Qiu , Chun-Ming Wang , Stephen Zee , Fan Zhong
IPC分类号： H01L21/00
CPC分类号： G02B26/0841 , B81B3/0072 , B81B2201/047 , B81B2203/0163 , B81B2203/019 , B81B2203/0307 , B81B2203/053 , B81C1/00142 , B81C1/00666 , B81C2201/0167 , G02B26/001 , Y10S359/90
摘要： Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.
摘要翻译： MEMS器件的实施例包括具有基本垂直侧壁的支撑结构。 通过沉积自平面化材料或通过电镀工艺形成某些支撑结构。 通过间隔物蚀刻形成其它支撑结构。 其它MEMS器件包括至少部分在可移动层下方的支撑结构，其中可移动层下面的支撑结构的部分包括凸形侧壁。 在另外的实施例中，支撑结构的一部分延伸穿过可移动层中的孔并且在可移动层的至少一部分上方延伸。
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2.发明申请MEMS DEVICES HAVING SUPPORT STRUCTURES WITH SUBSTANTIALLY VERTICAL SIDEWALLS AND METHODS FOR FABRICATING THE SAME 失效具有支撑结构的具有主要垂直平面的MEMS装置及其制造方法公开(公告)号：US20100202039A1
公开(公告)日：2010-08-12
申请号：US12766702
申请日：2010-04-23
申请人： Lior Kogut , Chengbin Qiu , Chun-Ming Wang , Stephen Zee , Fan Zhong
发明人： Lior Kogut , Chengbin Qiu , Chun-Ming Wang , Stephen Zee , Fan Zhong
CPC分类号： G02B26/0841 , B81B3/0072 , B81B2201/047 , B81B2203/0163 , B81B2203/019 , B81B2203/0307 , B81B2203/053 , B81C1/00142 , B81C1/00666 , B81C2201/0167 , G02B26/001 , Y10S359/90
摘要： Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.
摘要翻译： MEMS器件的实施例包括具有基本垂直侧壁的支撑结构。 通过沉积自平面化材料或通过电镀工艺形成某些支撑结构。 通过间隔物蚀刻形成其它支撑结构。 其它MEMS器件包括至少部分在可移动层下方的支撑结构，其中可移动层下面的支撑结构的部分包括凸形侧壁。 在另外的实施例中，支撑结构的一部分延伸穿过可移动层中的孔并且在可移动层的至少一部分上方延伸。
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3.发明授权MEMS devices having support structures with substantially vertical sidewalls and methods for fabricating the same 失效具有基本垂直侧壁的支撑结构的MEMS器件及其制造方法公开(公告)号：US07704773B2
公开(公告)日：2010-04-27
申请号：US11506600
申请日：2006-08-18
申请人： Lior Kogut , Chengbin Qiu , Chun-Ming Wang , Stephen Zee , Fan Zhong
发明人： Lior Kogut , Chengbin Qiu , Chun-Ming Wang , Stephen Zee , Fan Zhong
IPC分类号： H01L21/00
CPC分类号： G02B26/0841 , B81B3/0072 , B81B2201/047 , B81B2203/0163 , B81B2203/019 , B81B2203/0307 , B81B2203/053 , B81C1/00142 , B81C1/00666 , B81C2201/0167 , G02B26/001 , Y10S359/90
摘要： Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.
摘要翻译： MEMS器件的实施例包括具有基本垂直侧壁的支撑结构。 通过沉积自平面化材料或通过电镀工艺形成某些支撑结构。 通过间隔物蚀刻形成其它支撑结构。 其它MEMS器件包括至少部分在可移动层下方的支撑结构，其中可移动层下面的支撑结构的部分包括凸形侧壁。 在另外的实施例中，支撑结构的一部分延伸穿过可移动层中的孔并且在可移动层的至少一部分上方延伸。
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4.发明授权MEMS devices having support structures with substantially vertical sidewalls and methods for fabricating the same 失效具有基本垂直侧壁的支撑结构的MEMS器件及其制造方法公开(公告)号：US08298847B2
公开(公告)日：2012-10-30
申请号：US12766702
申请日：2010-04-23
申请人： Lior Kogut , Chun-Ming Wang , Chengbin Qui , Stephen Zee , Fan Zhong
发明人： Lior Kogut , Chun-Ming Wang , Chengbin Qui , Stephen Zee , Fan Zhong
IPC分类号： H01L21/00
CPC分类号： G02B26/0841 , B81B3/0072 , B81B2201/047 , B81B2203/0163 , B81B2203/019 , B81B2203/0307 , B81B2203/053 , B81C1/00142 , B81C1/00666 , B81C2201/0167 , G02B26/001 , Y10S359/90
摘要： Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.
摘要翻译： MEMS器件的实施例包括具有基本垂直侧壁的支撑结构。 通过沉积自平面化材料或通过电镀工艺形成某些支撑结构。 通过间隔物蚀刻形成其它支撑结构。 其它MEMS器件包括至少部分在可移动层下方的支撑结构，其中可移动层下面的支撑结构的部分包括凸形侧壁。 在另外的实施例中，支撑结构的一部分延伸穿过可移动层中的孔并且在可移动层的至少一部分上方延伸。
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公开(公告)号：US07652814B2
公开(公告)日：2010-01-26
申请号：US11656681
申请日：2007-01-23
申请人： Fan Zhong , Chun-Ming Wang , Stephen Zee
发明人： Fan Zhong , Chun-Ming Wang , Stephen Zee
IPC分类号： G02B26/00
CPC分类号： G02B26/001
摘要： MEMS devices are fabricated by a method that involves forming an optical element (e.g., etalon) over a substrate and then forming a light modulating element (e.g., interferometric modulator) over the optical element. In an embodiment, a support structure for the light modulating element is aligned with the underlying optical element to thereby alter the appearance of the support structure to a viewer. Such an optical element is separated from the support structure by one or more buffer layers.
摘要翻译： 通过包括在衬底上形成光学元件（例如标准具）然后在光学元件上形成光调制元件（例如干涉式调制器）的方法制造MEMS器件。 在一个实施例中，用于光调制元件的支撑结构与下面的光学元件对准，从而将支撑结构的外观改变为观看者。 这样的光学元件通过一个或多个缓冲层与支撑结构分离。
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公开(公告)号：US20070285761A1
公开(公告)日：2007-12-13
申请号：US11656681
申请日：2007-01-23
申请人： Fan Zhong , Chun-Ming Wang , Stephen Zee
发明人： Fan Zhong , Chun-Ming Wang , Stephen Zee
IPC分类号： G02B26/00
CPC分类号： G02B26/001
摘要： MEMS devices are fabricated by a method that involves forming an optical element (e.g., etalon) over a substrate and then forming a light modulating element (e.g., interferometric modulator) over the optical element. In an embodiment, a support structure for the light modulating element is aligned with the underlying optical element to thereby alter the appearance of the support structure to a viewer. Such an optical element is separated from the support structure by one or more buffer layers.
摘要翻译： 通过包括在衬底上形成光学元件（例如标准具）然后在光学元件上形成光调制元件（例如干涉式调制器）的方法制造MEMS器件。 在一个实施例中，用于光调制元件的支撑结构与下面的光学元件对准，从而将支撑结构的外观改变为观看者。 这样的光学元件通过一个或多个缓冲层与支撑结构分离。
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7.发明申请ELECTROMECHANICAL DEVICE CONFIGURED TO MINIMIZE STRESS-RELATED DEFORMATION AND METHODS FOR FABRICATING SAME 审中-公开配置为最小化应力相关变形的电动装置及其制造方法公开(公告)号：US20120287138A1
公开(公告)日：2012-11-15
申请号：US13556127
申请日：2012-07-23
申请人： Fan Zhong , Lior Kogut
发明人： Fan Zhong , Lior Kogut
CPC分类号： G02B26/0841 , B81B3/0072 , B81B2201/047 , B81B2203/0163 , B81B2203/019 , B81B2203/0307 , B81B2203/053 , B81C1/00142 , B81C1/00666 , B81C2201/0167 , G02B26/001 , Y10S359/90
摘要： Embodiments of MEMS devices include a movable layer supported by overlying support structures, and may also include underlying support structures. In one embodiment, the residual stresses within the overlying support structures and the movable layer are substantially equal. In another embodiment, the residual stresses within the overlying support structures and the underlying support structures are substantially equal. In certain embodiments, substantially equal residual stresses are be obtained through the use of layers made from the same materials having the same thicknesses. In further embodiments, substantially equal residual stresses are obtained through the use of support structures and/or movable layers which are mirror images of one another.
摘要翻译： MEMS器件的实施例包括由上覆的支撑结构支撑的可移动层，并且还可以包括下面的支撑结构。 在一个实施例中，覆盖的支撑结构和可移动层内的残余应力基本相等。 在另一个实施例中，上覆支撑结构和下面的支撑结构内的残余应力基本相等。 在某些实施例中，通过使用由具有相同厚度的相同材料制成的层，可以获得基本相等的残余应力。 在另外的实施例中，通过使用作为彼此的镜像的支撑结构和/或可移动层来获得基本相等的残余应力。
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8.发明申请ELECTROMECHANICAL DEVICE CONFIGURED TO MINIMIZE STRESS-RELATED DEFORMATION AND METHODS FOR FABRICATING SAME 有权配置为最小化应力相关变形的电动装置及其制造方法公开(公告)号：US20100265563A1
公开(公告)日：2010-10-21
申请号：US12825214
申请日：2010-06-28
申请人： Fan Zhong , Lior Kogut
发明人： Fan Zhong , Lior Kogut
CPC分类号： G02B26/0841 , B81B3/0072 , B81B2201/047 , B81B2203/0163 , B81B2203/019 , B81B2203/0307 , B81B2203/053 , B81C1/00142 , B81C1/00666 , B81C2201/0167 , G02B26/001 , Y10S359/90
摘要： Embodiments of MEMS devices include a movable layer supported by overlying support structures, and may also include underlying support structures. In one embodiment, the residual stresses within the overlying support structures and the movable layer are substantially equal. In another embodiment, the residual stresses within the overlying support structures and the underlying support structures are substantially equal. In certain embodiments, substantially equal residual stresses are be obtained through the use of layers made from the same materials having the same thicknesses. In further embodiments, substantially equal residual stresses are obtained through the use of support structures and/or movable layers which are mirror images of one another.
摘要翻译： MEMS器件的实施例包括由上覆的支撑结构支撑的可移动层，并且还可以包括下面的支撑结构。 在一个实施例中，覆盖的支撑结构和可移动层内的残余应力基本相等。 在另一个实施例中，上覆支撑结构和下面的支撑结构内的残余应力基本相等。 在某些实施例中，通过使用由具有相同厚度的相同材料制成的层，可以获得基本相等的残余应力。 在另外的实施例中，通过使用作为彼此的镜像的支撑结构和/或可移动层来获得基本相等的残余应力。
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9.发明申请MEMS device having support structures configured to minimize stress-related deformation and methods for fabricating same 有权具有构造成使应力相关变形最小化的支撑结构的MEMS器件及其制造方法公开(公告)号：US20070041076A1
公开(公告)日：2007-02-22
申请号：US11506594
申请日：2006-08-18
申请人： Fan Zhong , Lior Kogut
发明人： Fan Zhong , Lior Kogut
IPC分类号： G02B26/00
CPC分类号： G02B26/0841 , B81B3/0072 , B81B2201/047 , B81B2203/0163 , B81B2203/019 , B81B2203/0307 , B81B2203/053 , B81C1/00142 , B81C1/00666 , B81C2201/0167 , G02B26/001 , Y10S359/90
摘要： Embodiments of MEMS devices include a movable layer supported by overlying support structures, and may also include underlying support structures. In one embodiment, the residual stresses within the overlying support structures and the movable layer are substantially equal. In another embodiment, the residual stresses within the overlying support structures and the underlying support structures are substantially equal. In certain embodiments, substantially equal residual stresses are be obtained through the use of layers made from the same materials having the same thicknesses. In further embodiments, substantially equal residual stresses are obtained through the use of support structures and/or movable layers which are mirror images of one another.
摘要翻译： MEMS器件的实施例包括由上覆的支撑结构支撑的可移动层，并且还可以包括下面的支撑结构。 在一个实施例中，覆盖的支撑结构和可移动层内的残余应力基本相等。 在另一个实施例中，上覆支撑结构和下面的支撑结构内的残余应力基本相等。 在某些实施例中，通过使用由具有相同厚度的相同材料制成的层，可以获得基本相等的残余应力。 在另外的实施例中，通过使用作为彼此的镜像的支撑结构和/或可移动层来获得基本相等的残余应力。
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10.发明授权Electromechanical device configured to minimize stress-related deformation and methods for fabricating same 有权配置为最小化应力相关变形的机电装置及其制造方法公开(公告)号：US08229253B2
公开(公告)日：2012-07-24
申请号：US12825214
申请日：2010-06-28
申请人： Fan Zhong , Lior Kogut
发明人： Fan Zhong , Lior Kogut
IPC分类号： G02F1/01
CPC分类号： G02B26/0841 , B81B3/0072 , B81B2201/047 , B81B2203/0163 , B81B2203/019 , B81B2203/0307 , B81B2203/053 , B81C1/00142 , B81C1/00666 , B81C2201/0167 , G02B26/001 , Y10S359/90
摘要： Embodiments of MEMS devices include a movable layer supported by overlying support structures, and may also include underlying support structures. In one embodiment, the residual stresses within the overlying support structures and the movable layer are substantially equal. In another embodiment, the residual stresses within the overlying support structures and the underlying support structures are substantially equal. In certain embodiments, substantially equal residual stresses are be obtained through the use of layers made from the same materials having the same thicknesses. In further embodiments, substantially equal residual stresses are obtained through the use of support structures and/or movable layers which are mirror images of one another.
摘要翻译： MEMS器件的实施例包括由上覆的支撑结构支撑的可移动层，并且还可以包括下面的支撑结构。 在一个实施例中，覆盖的支撑结构和可移动层内的残余应力基本相等。 在另一个实施例中，上覆支撑结构和下面的支撑结构内的残余应力基本相等。 在某些实施例中，通过使用由具有相同厚度的相同材料制成的层，可以获得基本相等的残余应力。 在另外的实施例中，通过使用作为彼此的镜像的支撑结构和/或可移动层来获得基本相等的残余应力。
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