摘要:
The RT regions of an ISB light emitter comprise pre-biased SLs and a multiplicity of split quantum wells (SPQWs). A SPQW is a quantum well that is divided into a multiplicity of sub-wells by a first barrier layer sufficiently thin that the upper and lower energy states are split beyond their natural broadening and contribute to different minibands in each RT region. In contrast, adjacent SPQWs are coupled to one another by second barrier layers. The thicknesses of the latter layers are chosen so that minibands are created across each RT region. In one embodiment, the emitter includes an I/R region between adjacent RT regions, and in another embodiment the I/R regions are omitted.
摘要:
An intersubband semiconductor light source comprises a core region that includes a unipolar, radiative transition (RT) region having upper and lower energy levels, an injector-only (I) region disposed on one side of the RT region, and a reflector/extractor-only (R/E) region disposed on the other side of the RT region. The I region has a first miniband of energy levels aligned so as to inject electrons into the upper energy level, and the R/E region has a second miniband of energy levels aligned so as to extract electrons from the lower energy level. The R/E region also has a minigap aligned so as to inhibit the extraction of electrons from the upper level. A suitable voltage applied across the core region is effective to cause the RT region to generate light at a wavelength determined by the energy difference between the upper and lower energy levels. Low voltage operation at less than 3 V is described.
摘要:
The measurement of intersubband electroluminescence (ISB-EL) in unipolar quantum cascade lasers is achieved by forming a longitudinal cleave through the active region and waveguide of the QC laser device, exposing a complete side face of the device, including the active region. The conventional laser facets at the entrance and exit of the active region are coated with a highly reflective material and the emission from the exposed side face is measured. In theory, the sideface emission would comprise only the ISB-EL spontaneous emission, but some additional laser emission (due to scattering in the imperfect waveguide structure) also exits along this sideface. Spatial filtering and/or polarization monitoring can be used to differentiate the laser emission from the ISB-EL spontaneous emission.
摘要:
A surface plasmon laser structure is formed to include a DFB structure as the metal carrying layer, thus forming a single mode surface plasmon laser. The DFB structure comprises a multiple layer metallic surface guiding structure (for example, titanium stripes covered with a layer of gold. forming alternating Ti/Au—Au stripes). The active region, in one embodiment, may comprise a quantum cascade structure.
摘要:
A novel superlattice quantum cascade (SLQC) laser has undoped SL active regions, with the dopant concentration in the injector region being selected, such that, under an appropriate electrical bias, the SL active region is substantially electric field free. The absence of dopant atoms in the SL active region results in reduced carrier scattering and reduced optical losses, with consequent low threshold current and/or room temperature operation. The novel laser emits in the mid-IR spectral region and can be advantageously used in measurement or monitoring systems, e.g., in pollution monitoring systems.
摘要:
Instead of trying to keep the SLs of a QC laser field free, we "pre-bias" the actual electronic potential by varying the SL period (and hence average composition) so as to achieve an essentially flat profile, on average, of upper and lower minibands, despite the presence of an applied field in the SLs. In one embodiment, in at least a first subset of the QW layers, the thicknesses of the QW layers are varied from QW layer to QW layer so as to increase in the direction of the applied field. In this embodiment, the upper and lower lasing levels are located, in the absence of an applied electric field, each at different energies from layer to layer within the first subset, so that despite the presence of an applied field, the desired flatband condition of the upper and lower minibands is realized. In a preferred embodiment, the thicknesses of the QW layers within the first subset are varied from QW layer to QW layer so as to increase in the direction of the applied field, and the thicknesses of a second subset of the barrier layers are also varied from barrier layer to barrier layer so as to decrease or increase in the direction of the applied field.
摘要:
A bi-directional semiconductor light source is formed that provides emission in response to either a positive or negative bias voltage. In a preferred embodiment with an asymmetric injector region in a cascade structure, the device will emit at a first wavelength (&lgr;−) under a negative bias and a second wavelength (&lgr;+) under a positive bias. In other embodiments, the utilization of an asymmetric injector region can be used to provide a light source with two different power levels, or operating voltages, as a function of the bias polarity.
摘要:
A multiple wavelength quantum cascade (QC) superlattice (SL) light source has at least three energy levels in each radiative transition (RT) region, and electron transitions between the levels give rise to emission lines at different wavelengths. In one embodiment, a lower miniband has at least a first energy level and an upper miniband has at least third and fourth energy levels. In another embodiment, the lower miniband has first and second energy levels. In both cases, electron transitions between a first pair of the upper and lower levels generates light at a first spontaneous emission line having a center wavelength .lambda..sub.1 and a line broadening first energy, and electron transitions between a second pair of the upper and lower levels generates light at a second spontaneous emission line having a center wavelength .lambda..sub.2 and a line broadening second energy. The energy separation of the center wavelengths is greater than the larger of the first and second line broadening energies, and means are provided for inhibiting the relaxation of electrons from the fourth level to said third level. In a preferred embodiment, which is particularly suited to lasers made from Group III-V compound semiconductors, the inhibiting means hinders the emission of optical phonons. One way to inhibit these phonons is to make the energy separation of the upper levels less than the energy of an optical phonon in the active region.
摘要:
A novel quantum cascade (QC) laser comprises a multiplicity of identical repeat units, with each repeat unit comprising an active region and an injector region. The injector region comprises quantum wells and barriers, selected to facilitate, under appropriate bias, resonant carrier transport from a lower energy level of a given active region to an upper energy level of an adjacent downstream active region. Carrier transition from the upper energy level to a lower energy level of an active region results in emission of infrared radiation. The laser is advantageously used in, e.g., a measurement system for detection of trace compounds in air.
摘要:
An optoelectronic transducer comprises a unipolar, intraband active region and a micro-cavity resonator. The resonator includes a 2D array of essentially equally spaced regions that exhibits resonant modes. Each of the spaced regions has a depth that extends through the active region and has an average refractive index that is different from that of the active region. The refractive index contrast, the spacing of the spaced regions, and the dimensions of the spaced regions are mutually adapted so that the array acts as a micro-cavity resonator and so that at least one frequency of the resonant modes of the array falls within the spectrum of an optoelectronic parameter of the active region (i.e., the gain spectrum where the transducer is a laser; the absorption spectrum where the transducer is a photodetector). In a first embodiment, the transducer is an ISB laser, whereas in a second embodiment it is a unipolar, intraband photodetector. In other embodiments, the laser is a surface-emitting ISB laser and the photodetector is a vertically-illuminated detector. In another embodiment, a nonlinear optical material is optically coupled to the micro-cavity resonator, which in one case allows an ISB laser to exhibit bistable operation.