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    Intersubband light source with separate electron injector and reflector/extractor
    1.
    发明授权
    Intersubband light source with separate electron injector and reflector/extractor 有权
    带有独立电子注入器和反射器/提取器的带内光源

    公开(公告)号：US06324199B1

    公开(公告)日：2001-11-27

    申请号：US09195260

    申请日：1998-11-18

    Applicant: Federico Capasso ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    Inventor： Federico Capasso ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    IPC: H01S500

    CPC classification number: B82Y20/00 ,  H01S5/3402

    Abstract: An intersubband semiconductor light source comprises a core region that includes a unipolar, radiative transition (RT) region having upper and lower energy levels, an injector-only (I) region disposed on one side of the RT region, and a reflector/extractor-only (R/E) region disposed on the other side of the RT region. The I region has a first miniband of energy levels aligned so as to inject electrons into the upper energy level, and the R/E region has a second miniband of energy levels aligned so as to extract electrons from the lower energy level. The R/E region also has a minigap aligned so as to inhibit the extraction of electrons from the upper level. A suitable voltage applied across the core region is effective to cause the RT region to generate light at a wavelength determined by the energy difference between the upper and lower energy levels. Low voltage operation at less than 3 V is described.

    Abstract translation: 子带间半导体光源包括芯区域，其包括具有上和下能级的单极辐射跃迁（RT）区域，设置在RT区域的一侧上的仅注射器（I）区域，以及反射器/ （R / E）区域设置在RT区域的另一侧。 I区具有对准能量水平的第一小能级以将电子注入到上能量级中，并且R / E区具有对准的能级的第二小容纳，从而从较低的能级提取电子。 R / E区域也具有微小的栅极排列，从而抑制从上层提取电子。 在芯区域上施加的合适电压有效地使得RT区域产生由上和下能量级之间的能量差确定的波长的光。 描述低于3V的低电压操作。

    CIRCULAR SEMICONDUCTOR LASERS HAVING LATTICES FOR VERTICAL EMISSION
    2.
    发明申请
    CIRCULAR SEMICONDUCTOR LASERS HAVING LATTICES FOR VERTICAL EMISSION 审中-公开
    圆形半导体激光器具有垂直发射的光栅

    公开(公告)号：US20110080931A1

    公开(公告)日：2011-04-07

    申请号：US12940209

    申请日：2010-11-05

    Applicant: Alessandro TREDICUCCI ,  Fabio BELTRAM ,  Lucas MAHLER

    Inventor： Alessandro TREDICUCCI ,  Fabio BELTRAM ,  Lucas MAHLER

    IPC: H01S5/34 ,  H01S5/10 ,  H01S3/06 ,  B82Y20/00 ,  B82Y99/00

    CPC classification number: H01S5/3401 ,  B82Y20/00 ,  G02B6/12007 ,  H01S5/1042 ,  H01S5/1046 ,  H01S5/1071 ,  H01S5/1075 ,  H01S5/18 ,  H01S5/187 ,  H01S5/2004 ,  H01S5/42 ,  H01S2302/02

    Abstract: A semiconductor laser includes a laser resonator (1) having a planar active region (3), a first (2) and a second (6) wave-guide layer that define the active region (3). The resonator (1) has a shape that is defined by a perimeter, along which the first layer (2) radiation guide has a plurality of cuts (4) forming a lattice. The cuts are made as at least two adjacent slits (4a, 4b) and a zone between the slits in which an uncut portion (5a) of wave-guiding layer is present. In the case of a circular semiconductor laser, the number of cuts (4) is a prime number, or an odd number that is a multiple of a prime number, the prime number being greater than or equal to five. This way, it is avoided that resonance modes evolve outside of the zone with the cuts, or in any case with a component that is different from zero of the wave vector in a radial direction, and a pure whispering gallery operating mode is obtained, with maximum of the emitted radiation that evolves in a vertical direction, i.e. orthogonal to the plane of the laser resonator, and without the laser emitting radiation evolving in a radial direction.

    Abstract translation: 半导体激光器包括具有平面有源区（3），限定有源区（3）的第一（2）和第二（6）波导层的激光谐振器（1）。 谐振器（1）具有由周边限定的形状，第一层（2）辐射引导件沿着该周边具有形成网格的多个切口（4）。 切口形成为至少两个相邻的狭缝（4a，4b）和在其中存在波导层的未切割部分（5a）的狭缝之间的区域。 在圆形半导体激光器的情况下，切割次数（4）是素数，或是素数的倍数的奇数，素数大于或等于5。 这样避免了共振模式在具有切割的区域之外演变，或者在任何情况下都以与径向方向上的波矢的零度不同的分量进行演化，并且获得纯粹的耳语画廊操作模式， 在垂直方向（即，垂直于激光谐振器的平面）并且没有激光发射辐射在径向方向上演化的发射辐射的最大值。

    THz semiconductor laser incorporating a controlled plasmon confinement waveguide
    4.
    发明授权
    THz semiconductor laser incorporating a controlled plasmon confinement waveguide 有权
    掺入受控等离子体限制波导的太赫兹半导体激光器

    公开(公告)号：US07382806B2

    公开(公告)日：2008-06-03

    申请号：US10508996

    申请日：2003-03-24

    Applicant: Alessandro Tredicucci ,  Fabio Beltram ,  Harvey Edward Beere ,  Alexander Giles Davies ,  Ruedeger Koehler ,  Edmund Harold Linfield

    Inventor： Alessandro Tredicucci ,  Fabio Beltram ,  Harvey Edward Beere ,  Alexander Giles Davies ,  Ruedeger Koehler ,  Edmund Harold Linfield

    IPC: H01S3/30

    CPC classification number: B82Y20/00 ,  H01S5/1046 ,  H01S5/2054 ,  H01S5/22 ,  H01S5/3213 ,  H01S5/3402

    Abstract: A semiconductor laser comprises an active region (12) which, in response to a pumping energy applied thereto, can produce a stimulated emission of radiation with a central wavelength (λ) in the far infrared region, and a confinement region (16, 18, 22) suitable for confining the radiation in the active region (12), and comprising at least one interface (16a, 16b, 22a) between adjacent layers that is capable of supporting surface plasmon modes generated by an interaction of the interface with the radiation. The confinement region (16, 18, 22) comprises a wave-guide layer (16) which is delimited on opposite sides by a first interface and by a second interface (16a, 16b). The guide layer (16) is doped in a manner such that the first and second interfaces (16a, 16b) are capable of supporting the plasmon modes, respectively, and is of a thickness (d) such as to bring about the accumulation of the plasmon modes in proximity to the first and second interfaces (16a, 16b), outside the layer (16), and substantially a suppression of the plasmon modes, inside the layer.

    Abstract translation: 半导体激光器包括有源区域（12），其响应于施加到其上的泵送能量，可产生受激发射的远红外区域中具有中心波长（λ）的辐射，以及约束区域（16,18， 22），其适于将辐射限制在有源区域（12）中，并且包括相邻层之间的至少一个界面（16a，16b，22a），其能够支持通过界面与 辐射。 所述限制区域（16,18,22）包括波导层（16），所述波导层（16）由相对侧由第一界面和第二界面（16a，16b）限定。 引导层（16）以使得第一和第二界面（16a，16b）能够分别支撑等离子体模式并且具有厚度（d）的方式被掺杂，以便产生积累 在层（16）外部的第一和第二界面（16a，16b）附近的等离子体激元模式，以及基本上抑制层内的等离子体激元模式。

    Mounting technology for intersubband light emitters
    6.
    发明授权
    Mounting technology for intersubband light emitters 有权
    子带发射器的安装技术

    公开(公告)号：US06326646B1

    公开(公告)日：2001-12-04

    申请号：US09448929

    申请日：1999-11-24

    Applicant: James Nelson Baillargeon ,  Federico Capasso ,  Alfred Yi Cho ,  George Sung-Nee Chu ,  Claire Gmachl ,  Albert Lee Hutchinson ,  Arthur Mike Sergent ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    Inventor： James Nelson Baillargeon ,  Federico Capasso ,  Alfred Yi Cho ,  George Sung-Nee Chu ,  Claire Gmachl ,  Albert Lee Hutchinson ,  Arthur Mike Sergent ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    IPC: H01L3300

    CPC classification number: B82Y20/00 ,  H01S5/0202 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02469 ,  H01S5/0425 ,  H01S5/2275 ,  H01S5/3402

    Abstract: A mounting technology that increases the cw operating temperature of intersubband lasers, without increasing the risk of hot spots near the facets and short circuits near the perimeter of the laser chip, is described. In accordance with one embodiment of our invention, a method of fabricating a intersubband semiconductor laser comprises the steps of providing a single crystal semiconductor substrate, forming on the substrate an epitaxial region that includes a core region and an intersubband active region in the core region, forming front and back facets that define an optical cavity resonator, forming a metal electrode on the epitaxial region so as to provide an electrical connection to said active region, and mounting said laser on a heat sink, characterized in that the mounting step includes the steps of (i) soldering the electrode to the heat sink so that the front facet overhangs an edge of the heat sink and (ii) cleaving off the overhanging portion of the laser so as to form a new front facet that is essentially flush with the edge of said heat sink. In accordance with another embodiment, our invention is further characterized in that metal electrode to the epitaxial region is recessed from the edges of the laser chip. In accordance with yet another embodiment, our invention is further characterized in that the back facet of the laser is coated so that any solder that might tend to creep onto the back facet contacts the coating and not semiconductor material (in particular the ends of the active region).

    Abstract translation: 描述了增加带间激光器的cw工作温度的安装技术，而不增加靠近激光芯片周边的面和短路附近的热点的风险。 根据本发明的一个实施例，一种制造子带间半导体激光器的方法包括以下步骤：提供单晶半导体衬底，在衬底上形成包含核心区域和芯区域中的子带间有源区域的外延区域， 形成限定光腔谐振器的前和后刻面，在所述外延区域上形成金属电极，以提供与所述有源区域的电连接，以及将所述激光器安装在散热器上，其特征在于，所述安装步骤包括步骤 （i）将电极焊接到散热器，使得前刻面突出于散热器的边缘，并且（ii）从激光器的悬垂部分分离，以形成基本上与边缘齐平的新的前刻面 的所述散热器。 根据另一个实施例，本发明的特征还在于，到外延区域的金属电极从激光芯片的边缘凹进。 根据又一个实施例，本发明的特征还在于，激光器的后面被涂覆，使得任何可能趋于蠕变到背面上的焊料与涂层接触而不是半导体材料（特别是活性物质的端部） 地区）。

    Quantum cascade light emitter with pre-biased internal electronic potential
    10.
    发明授权
    Quantum cascade light emitter with pre-biased internal electronic potential 有权
    量子级联发光器具有预偏置内部电子电位

    公开(公告)号：US6055254A

    公开(公告)日：2000-04-25

    申请号：US159127

    申请日：1998-09-23

    Applicant: Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    Inventor： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    IPC: H01L29/06 ,  H01L29/15 ,  H01S5/34 ,  H01S5/343 ,  H01S3/18 ,  H01S3/19

    CPC classification number: B82Y20/00 ,  H01S5/3402

    Abstract: Instead of trying to keep the SLs of a QC laser field free, we "pre-bias" the actual electronic potential by varying the SL period (and hence average composition) so as to achieve an essentially flat profile, on average, of upper and lower minibands, despite the presence of an applied field in the SLs. In one embodiment, in at least a first subset of the QW layers, the thicknesses of the QW layers are varied from QW layer to QW layer so as to increase in the direction of the applied field. In this embodiment, the upper and lower lasing levels are located, in the absence of an applied electric field, each at different energies from layer to layer within the first subset, so that despite the presence of an applied field, the desired flatband condition of the upper and lower minibands is realized. In a preferred embodiment, the thicknesses of the QW layers within the first subset are varied from QW layer to QW layer so as to increase in the direction of the applied field, and the thicknesses of a second subset of the barrier layers are also varied from barrier layer to barrier layer so as to decrease or increase in the direction of the applied field.

    Abstract translation: 不要试图保持QC激光场的SL不受限制，我们通过改变SL周期（因此平均组成）来“预先偏置”实际的电子电位，以便平均地获得上部和 尽管在SL中存在应用场，但是较低的迷你频段。 在一个实施例中，在QW层的至少第一子集中，QW层的厚度从QW层到QW层变化，以便在施加场的方向上增加。 在该实施例中，在没有所施加的电场的情况下，上和下激光电平各自处于第一子集内的层与层之间的不同能量，使得尽管存在施加的场，但是期望的平带条件 实现上下两个迷你吧。 在优选实施例中，第一子集内的QW层的厚度从QW层到QW层变化，以便在施加的场的方向上增加，并且阻挡层的第二子集的厚度也从 阻挡层到阻挡层，以便在施加的场的方向上减小或增加。

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