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    Intersubband light source with separate electron injector and reflector/extractor
    2.
    发明授权
    Intersubband light source with separate electron injector and reflector/extractor 有权
    带有独立电子注入器和反射器/提取器的带内光源

    公开(公告)号：US06324199B1

    公开(公告)日：2001-11-27

    申请号：US09195260

    申请日：1998-11-18

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/3402

    摘要： An intersubband semiconductor light source comprises a core region that includes a unipolar, radiative transition (RT) region having upper and lower energy levels, an injector-only (I) region disposed on one side of the RT region, and a reflector/extractor-only (R/E) region disposed on the other side of the RT region. The I region has a first miniband of energy levels aligned so as to inject electrons into the upper energy level, and the R/E region has a second miniband of energy levels aligned so as to extract electrons from the lower energy level. The R/E region also has a minigap aligned so as to inhibit the extraction of electrons from the upper level. A suitable voltage applied across the core region is effective to cause the RT region to generate light at a wavelength determined by the energy difference between the upper and lower energy levels. Low voltage operation at less than 3 V is described.

    摘要翻译： 子带间半导体光源包括芯区域，其包括具有上和下能级的单极辐射跃迁（RT）区域，设置在RT区域的一侧上的仅注射器（I）区域，以及反射器/ （R / E）区域设置在RT区域的另一侧。 I区具有对准能量水平的第一小能级以将电子注入到上能量级中，并且R / E区具有对准的能级的第二小容纳，从而从较低的能级提取电子。 R / E区域也具有微小的栅极排列，从而抑制从上层提取电子。 在芯区域上施加的合适电压有效地使得RT区域产生由上和下能量级之间的能量差确定的波长的光。 描述低于3V的低电压操作。

    Mounting technology for intersubband light emitters
    5.
    发明授权
    Mounting technology for intersubband light emitters 有权
    子带发射器的安装技术

    公开(公告)号：US06326646B1

    公开(公告)日：2001-12-04

    申请号：US09448929

    申请日：1999-11-24

    申请人： James Nelson Baillargeon ,  Federico Capasso ,  Alfred Yi Cho ,  George Sung-Nee Chu ,  Claire Gmachl ,  Albert Lee Hutchinson ,  Arthur Mike Sergent ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    发明人： James Nelson Baillargeon ,  Federico Capasso ,  Alfred Yi Cho ,  George Sung-Nee Chu ,  Claire Gmachl ,  Albert Lee Hutchinson ,  Arthur Mike Sergent ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    IPC分类号： H01L3300

    CPC分类号： B82Y20/00 ,  H01S5/0202 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02469 ,  H01S5/0425 ,  H01S5/2275 ,  H01S5/3402

    摘要： A mounting technology that increases the cw operating temperature of intersubband lasers, without increasing the risk of hot spots near the facets and short circuits near the perimeter of the laser chip, is described. In accordance with one embodiment of our invention, a method of fabricating a intersubband semiconductor laser comprises the steps of providing a single crystal semiconductor substrate, forming on the substrate an epitaxial region that includes a core region and an intersubband active region in the core region, forming front and back facets that define an optical cavity resonator, forming a metal electrode on the epitaxial region so as to provide an electrical connection to said active region, and mounting said laser on a heat sink, characterized in that the mounting step includes the steps of (i) soldering the electrode to the heat sink so that the front facet overhangs an edge of the heat sink and (ii) cleaving off the overhanging portion of the laser so as to form a new front facet that is essentially flush with the edge of said heat sink. In accordance with another embodiment, our invention is further characterized in that metal electrode to the epitaxial region is recessed from the edges of the laser chip. In accordance with yet another embodiment, our invention is further characterized in that the back facet of the laser is coated so that any solder that might tend to creep onto the back facet contacts the coating and not semiconductor material (in particular the ends of the active region).

    摘要翻译： 描述了增加带间激光器的cw工作温度的安装技术，而不增加靠近激光芯片周边的面和短路附近的热点的风险。 根据本发明的一个实施例，一种制造子带间半导体激光器的方法包括以下步骤：提供单晶半导体衬底，在衬底上形成包含核心区域和芯区域中的子带间有源区域的外延区域， 形成限定光腔谐振器的前和后刻面，在所述外延区域上形成金属电极，以提供与所述有源区域的电连接，以及将所述激光器安装在散热器上，其特征在于，所述安装步骤包括步骤 （i）将电极焊接到散热器，使得前刻面突出于散热器的边缘，并且（ii）从激光器的悬垂部分分离，以形成基本上与边缘齐平的新的前刻面 的所述散热器。 根据另一个实施例，本发明的特征还在于，到外延区域的金属电极从激光芯片的边缘凹进。 根据又一个实施例，本发明的特征还在于，激光器的后面被涂覆，使得任何可能趋于蠕变到背面上的焊料与涂层接触而不是半导体材料（特别是活性物质的端部） 地区）。

    Quantum cascade light emitter with pre-biased internal electronic potential
    7.
    发明授权
    Quantum cascade light emitter with pre-biased internal electronic potential 有权
    量子级联发光器具有预偏置内部电子电位

    公开(公告)号：US6055254A

    公开(公告)日：2000-04-25

    申请号：US159127

    申请日：1998-09-23

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    IPC分类号： H01L29/06 ,  H01L29/15 ,  H01S5/34 ,  H01S5/343 ,  H01S3/18 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/3402

    摘要： Instead of trying to keep the SLs of a QC laser field free, we "pre-bias" the actual electronic potential by varying the SL period (and hence average composition) so as to achieve an essentially flat profile, on average, of upper and lower minibands, despite the presence of an applied field in the SLs. In one embodiment, in at least a first subset of the QW layers, the thicknesses of the QW layers are varied from QW layer to QW layer so as to increase in the direction of the applied field. In this embodiment, the upper and lower lasing levels are located, in the absence of an applied electric field, each at different energies from layer to layer within the first subset, so that despite the presence of an applied field, the desired flatband condition of the upper and lower minibands is realized. In a preferred embodiment, the thicknesses of the QW layers within the first subset are varied from QW layer to QW layer so as to increase in the direction of the applied field, and the thicknesses of a second subset of the barrier layers are also varied from barrier layer to barrier layer so as to decrease or increase in the direction of the applied field.

    摘要翻译： 不要试图保持QC激光场的SL不受限制，我们通过改变SL周期（因此平均组成）来“预先偏置”实际的电子电位，以便平均地获得上部和 尽管在SL中存在应用场，但是较低的迷你频段。 在一个实施例中，在QW层的至少第一子集中，QW层的厚度从QW层到QW层变化，以便在施加场的方向上增加。 在该实施例中，在没有所施加的电场的情况下，上和下激光电平各自处于第一子集内的层与层之间的不同能量，使得尽管存在施加的场，但是期望的平带条件 实现上下两个迷你吧。 在优选实施例中，第一子集内的QW层的厚度从QW层到QW层变化，以便在施加的场的方向上增加，并且阻挡层的第二子集的厚度也从 阻挡层到阻挡层，以便在施加的场的方向上减小或增加。

    Multiple wavelength quantum cascade light source
    9.
    发明授权
    Multiple wavelength quantum cascade light source 有权
    多波长量子级联光源

    公开(公告)号：US6148012A

    公开(公告)日：2000-11-14

    申请号：US176527

    申请日：1998-10-21

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    IPC分类号： H01L33/00 ,  H01S5/34 ,  H01S5/343 ,  H01S5/00 ,  H01S3/10

    CPC分类号： B82Y20/00 ,  H01S5/3402

    摘要： A multiple wavelength quantum cascade (QC) superlattice (SL) light source has at least three energy levels in each radiative transition (RT) region, and electron transitions between the levels give rise to emission lines at different wavelengths. In one embodiment, a lower miniband has at least a first energy level and an upper miniband has at least third and fourth energy levels. In another embodiment, the lower miniband has first and second energy levels. In both cases, electron transitions between a first pair of the upper and lower levels generates light at a first spontaneous emission line having a center wavelength .lambda..sub.1 and a line broadening first energy, and electron transitions between a second pair of the upper and lower levels generates light at a second spontaneous emission line having a center wavelength .lambda..sub.2 and a line broadening second energy. The energy separation of the center wavelengths is greater than the larger of the first and second line broadening energies, and means are provided for inhibiting the relaxation of electrons from the fourth level to said third level. In a preferred embodiment, which is particularly suited to lasers made from Group III-V compound semiconductors, the inhibiting means hinders the emission of optical phonons. One way to inhibit these phonons is to make the energy separation of the upper levels less than the energy of an optical phonon in the active region.

    摘要翻译： 多波长量子级联（QC）超晶格（SL）光源在每个辐射跃迁（RT）区域中具有至少三个能级，并且电平之间的电子跃迁产生不同波长的发射线。 在一个实施例中，较低的迷你巴具有至少第一能级，而上部迷你宝具有至少第三和第四能级。 在另一个实施例中，较低的迷你巴具有第一和第二能级。 在这两种情况下，第一对上层和下层之间的电子跃迁在具有中心波长λ1的第一自发发射线和增宽第一能量的线上产生光，并且第二对上和下层之间的电子跃迁 在具有中心波长λ2的第二自发发射线和增加第二能量的线上产生光。 中心波长的能量分离大于第一和第二线宽增加能的较大者，并且提供了用于抑制电子从第四级到所述第三级松弛的装置。 在特别适用于由III-V族化合物半导体制成的激光器的优选实施例中，抑制装置阻碍光学声子的发射。 抑制这些声子的一种方法是使上层的能量分离小于活性区域中的光学声子的能量。

    Quantum cascade laser
    10.
    发明授权
    Quantum cascade laser 失效
    量子级联激光器

    公开(公告)号：US6137817A

    公开(公告)日：2000-10-24

    申请号：US96701

    申请日：1998-06-12

    申请人： James Nelson Baillargeon ,  Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    发明人： James Nelson Baillargeon ,  Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    IPC分类号： H01S5/00 ,  H01S5/34 ,  H01S5/343

    CPC分类号： B82Y20/00 ,  H01S5/3402

    摘要： A novel quantum cascade (QC) laser comprises a multiplicity of identical repeat units, with each repeat unit comprising an active region and an injector region. The injector region comprises quantum wells and barriers, selected to facilitate, under appropriate bias, resonant carrier transport from a lower energy level of a given active region to an upper energy level of an adjacent downstream active region. Carrier transition from the upper energy level to a lower energy level of an active region results in emission of infrared radiation. The laser is advantageously used in, e.g., a measurement system for detection of trace compounds in air.

    摘要翻译： 新型量子级联（QC）激光器包括多个相同的重复单元，每个重复单元包括有源区和注入区。 喷射器区域包括量子阱和阻挡层，其被选择为有助于在适当的偏置下促进谐振载流子从给定有源区域的较低能量水平传输到相邻下游有源区域的较高能级。 从有功区域的较高能量级到较低能级的载波转变导致红外辐射的发射。 该激光器有利地用于例如用于检测空气中微量化合物的测量系统。