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    Intersubband light source with separate electron injector and reflector/extractor
    2.
    发明授权
    Intersubband light source with separate electron injector and reflector/extractor 有权
    带有独立电子注入器和反射器/提取器的带内光源

    公开(公告)号：US06324199B1

    公开(公告)日：2001-11-27

    申请号：US09195260

    申请日：1998-11-18

    Applicant: Federico Capasso ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    Inventor： Federico Capasso ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    IPC: H01S500

    CPC classification number: B82Y20/00 ,  H01S5/3402

    Abstract: An intersubband semiconductor light source comprises a core region that includes a unipolar, radiative transition (RT) region having upper and lower energy levels, an injector-only (I) region disposed on one side of the RT region, and a reflector/extractor-only (R/E) region disposed on the other side of the RT region. The I region has a first miniband of energy levels aligned so as to inject electrons into the upper energy level, and the R/E region has a second miniband of energy levels aligned so as to extract electrons from the lower energy level. The R/E region also has a minigap aligned so as to inhibit the extraction of electrons from the upper level. A suitable voltage applied across the core region is effective to cause the RT region to generate light at a wavelength determined by the energy difference between the upper and lower energy levels. Low voltage operation at less than 3 V is described.

    Abstract translation: 子带间半导体光源包括芯区域，其包括具有上和下能级的单极辐射跃迁（RT）区域，设置在RT区域的一侧上的仅注射器（I）区域，以及反射器/ （R / E）区域设置在RT区域的另一侧。 I区具有对准能量水平的第一小能级以将电子注入到上能量级中，并且R / E区具有对准的能级的第二小容纳，从而从较低的能级提取电子。 R / E区域也具有微小的栅极排列，从而抑制从上层提取电子。 在芯区域上施加的合适电压有效地使得RT区域产生由上和下能量级之间的能量差确定的波长的光。 描述低于3V的低电压操作。

    Mounting technology for intersubband light emitters
    4.
    发明授权
    Mounting technology for intersubband light emitters 有权
    子带发射器的安装技术

    公开(公告)号：US06326646B1

    公开(公告)日：2001-12-04

    申请号：US09448929

    申请日：1999-11-24

    Applicant: James Nelson Baillargeon ,  Federico Capasso ,  Alfred Yi Cho ,  George Sung-Nee Chu ,  Claire Gmachl ,  Albert Lee Hutchinson ,  Arthur Mike Sergent ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    Inventor： James Nelson Baillargeon ,  Federico Capasso ,  Alfred Yi Cho ,  George Sung-Nee Chu ,  Claire Gmachl ,  Albert Lee Hutchinson ,  Arthur Mike Sergent ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    IPC: H01L3300

    CPC classification number: B82Y20/00 ,  H01S5/0202 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02469 ,  H01S5/0425 ,  H01S5/2275 ,  H01S5/3402

    Abstract: A mounting technology that increases the cw operating temperature of intersubband lasers, without increasing the risk of hot spots near the facets and short circuits near the perimeter of the laser chip, is described. In accordance with one embodiment of our invention, a method of fabricating a intersubband semiconductor laser comprises the steps of providing a single crystal semiconductor substrate, forming on the substrate an epitaxial region that includes a core region and an intersubband active region in the core region, forming front and back facets that define an optical cavity resonator, forming a metal electrode on the epitaxial region so as to provide an electrical connection to said active region, and mounting said laser on a heat sink, characterized in that the mounting step includes the steps of (i) soldering the electrode to the heat sink so that the front facet overhangs an edge of the heat sink and (ii) cleaving off the overhanging portion of the laser so as to form a new front facet that is essentially flush with the edge of said heat sink. In accordance with another embodiment, our invention is further characterized in that metal electrode to the epitaxial region is recessed from the edges of the laser chip. In accordance with yet another embodiment, our invention is further characterized in that the back facet of the laser is coated so that any solder that might tend to creep onto the back facet contacts the coating and not semiconductor material (in particular the ends of the active region).

    Abstract translation: 描述了增加带间激光器的cw工作温度的安装技术，而不增加靠近激光芯片周边的面和短路附近的热点的风险。 根据本发明的一个实施例，一种制造子带间半导体激光器的方法包括以下步骤：提供单晶半导体衬底，在衬底上形成包含核心区域和芯区域中的子带间有源区域的外延区域， 形成限定光腔谐振器的前和后刻面，在所述外延区域上形成金属电极，以提供与所述有源区域的电连接，以及将所述激光器安装在散热器上，其特征在于，所述安装步骤包括步骤 （i）将电极焊接到散热器，使得前刻面突出于散热器的边缘，并且（ii）从激光器的悬垂部分分离，以形成基本上与边缘齐平的新的前刻面 的所述散热器。 根据另一个实施例，本发明的特征还在于，到外延区域的金属电极从激光芯片的边缘凹进。 根据又一个实施例，本发明的特征还在于，激光器的后面被涂覆，使得任何可能趋于蠕变到背面上的焊料与涂层接触而不是半导体材料（特别是活性物质的端部） 地区）。

    Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons
    5.
    发明授权
    Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons 失效
    结合基于表面等离子体激元的波导的长波长半导体激光器

    公开(公告)号：US06301282B1

    公开(公告)日：2001-10-09

    申请号：US09124295

    申请日：1998-07-29

    Applicant: Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Jerome Faist ,  Carlo Sirtori

    Inventor： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Jerome Faist ,  Carlo Sirtori

    IPC: H01S500

    CPC classification number: B82Y20/00 ,  H01S5/10 ,  H01S5/1046 ,  H01S5/323 ,  H01S5/3402 ,  H01S2301/145

    Abstract: A long wavelength (e.g., mid-IR to far-IR) semiconductor laser comprises an active region and at least one cladding region characterized in that the cladding region includes a light guiding interface between two materials which have dielectric constants opposite in sign. Consequently, the guided modes are transverse magnetic polarized surface waves (i.e., surface plasmons) which propagate along the interface without the need for a traditional dielectric cladding. In a preferred embodiment, the interface is formed between a semiconductor layer and a metal layer. The complex refractive index of the metal layer preferably has an imaginary component which is much larger than its real component. In an illustrative embodiment, our laser includes a QC active region sandwiched between a pair of cladding regions one of which is a guiding interface based on surface plasmons and the other of which is a dielectric (e.g., semiconductor) structure.

    Abstract translation: 长波长（例如，中红外至红外IR）半导体激光器包括有源区和至少一个包层区，其特征在于包层区包括具有与符号相反的介电常数的两种材料之间的导光界面。 因此，引导模式是横向磁极化表面波（即，表面等离子体激元），其沿着界面传播而不需要传统的电介质包层。 在优选实施例中，界面形成在半导体层和金属层之间。 金属层的复合折射率优选具有远大于其实际分量的虚部。 在说明性实施例中，我们的激光器包括夹在一对包层区域之间的QC有源区域，其中一个是基于表面等离子体激元的引导界面，另一个是电介质（例如半导体）结构。

    Article comprising a strain-compensated QC laser
    6.
    发明授权
    Article comprising a strain-compensated QC laser 失效
    文章包括应变补偿QC激光

    公开(公告)号：US6023482A

    公开(公告)日：2000-02-08

    申请号：US12300

    申请日：1998-01-23

    Applicant: Federico Capasso ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Jerome Faist ,  Albert Lee Hutchinson ,  Deborah Lee Sivco

    Inventor： Federico Capasso ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Jerome Faist ,  Albert Lee Hutchinson ,  Deborah Lee Sivco

    IPC: H01S5/00 ,  H01S5/06 ,  H01S5/12 ,  H01S5/34 ,  H01S3/19

    CPC classification number: B82Y20/00 ,  H01S5/3402 ,  H01S5/0612 ,  H01S5/12 ,  H01S5/3403 ,  H01S5/3406

    Abstract: A quantum cascade (QC) laser has a multilayer core region comprising alternating layers of a first and a second semiconductor material, with lattice constants a.sub.1 and a.sub.2, respectively. The first material is selected such that a.sub.1 >a.sub.0, where a, is the lattice constant of the substrate (typically InP), and the second material is selected such that a.sub.2 >a.sub.0. The materials are also selected such that the conduction band discontinuity .DELTA.E.sub.c between the first and second materials is greater than 520 meV in absolute value. The multilayer core comprises a multiplicity of essentially identical multilayer repeat units. The layer thicknesses and materials of the repeat units are selected to substantially provide strain compensation over a repeat unit. QC lasers according to this invention preferably comprise a distributed feedback feature, (e.g., a Bragg grating) selected to ensure single mode laser emission, and can be designed for operation at a wavelength in the first atmospheric window, typically about 3-5 .mu.m. Such lasers can advantageously be used for absorption spectroscopy, e.g., for emission monitoring.

    Abstract translation: 量子级联（QC）激光器具有包括第一和第二半导体材料的交替层的多层芯区域，分别具有晶格常数a1和a2。 选择第一材料使得a1> a0，其中a是衬底的晶格常数（通常为InP），并且选择第二材料使得a2> a0。 这些材料也被选择成使得第一和第二材料之间的导带不连续性DELTA Ec绝对值大于520meV。 多层芯包括多个基本相同的多层重复单元。 选择重复单元的层厚度和材料以在重复单元上基本上提供应变补偿。 根据本发明的QC激光器优选地包括被选择用于确保单模激光发射的分布反馈特征（例如，布拉格光栅），并且可以设计成在第一大气窗口中的波长下操作，通常为约3-5μm 。 这种激光器可以有利地用于吸收光谱，例如用于发射监测。

    Quantum cascade light emitter with pre-biased internal electronic potential
    10.
    发明授权
    Quantum cascade light emitter with pre-biased internal electronic potential 有权
    量子级联发光器具有预偏置内部电子电位

    公开(公告)号：US6055254A

    公开(公告)日：2000-04-25

    申请号：US159127

    申请日：1998-09-23

    Applicant: Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    Inventor： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    IPC: H01L29/06 ,  H01L29/15 ,  H01S5/34 ,  H01S5/343 ,  H01S3/18 ,  H01S3/19

    CPC classification number: B82Y20/00 ,  H01S5/3402

    Abstract: Instead of trying to keep the SLs of a QC laser field free, we "pre-bias" the actual electronic potential by varying the SL period (and hence average composition) so as to achieve an essentially flat profile, on average, of upper and lower minibands, despite the presence of an applied field in the SLs. In one embodiment, in at least a first subset of the QW layers, the thicknesses of the QW layers are varied from QW layer to QW layer so as to increase in the direction of the applied field. In this embodiment, the upper and lower lasing levels are located, in the absence of an applied electric field, each at different energies from layer to layer within the first subset, so that despite the presence of an applied field, the desired flatband condition of the upper and lower minibands is realized. In a preferred embodiment, the thicknesses of the QW layers within the first subset are varied from QW layer to QW layer so as to increase in the direction of the applied field, and the thicknesses of a second subset of the barrier layers are also varied from barrier layer to barrier layer so as to decrease or increase in the direction of the applied field.

    Abstract translation: 不要试图保持QC激光场的SL不受限制，我们通过改变SL周期（因此平均组成）来“预先偏置”实际的电子电位，以便平均地获得上部和 尽管在SL中存在应用场，但是较低的迷你频段。 在一个实施例中，在QW层的至少第一子集中，QW层的厚度从QW层到QW层变化，以便在施加场的方向上增加。 在该实施例中，在没有所施加的电场的情况下，上和下激光电平各自处于第一子集内的层与层之间的不同能量，使得尽管存在施加的场，但是期望的平带条件 实现上下两个迷你吧。 在优选实施例中，第一子集内的QW层的厚度从QW层到QW层变化，以便在施加的场的方向上增加，并且阻挡层的第二子集的厚度也从 阻挡层到阻挡层，以便在施加的场的方向上减小或增加。

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