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公开(公告)号：US20060221734A1
公开(公告)日：2006-10-05
申请号：US11093709
申请日：2005-03-30
IPC分类号： G11C29/00
CPC分类号： G11C13/003 , G11C7/062 , G11C7/08 , G11C13/0004 , G11C13/004 , G11C13/0061 , G11C2013/0054 , G11C2013/0071 , G11C2213/76
摘要： A memory includes a storage element (OUM) made of a phase-change material for storing a logic value and an access element (OTS) switching from a higher resistance condition to a lower resistance condition in response to a selection of the memory cell, the access element in the higher resistance condition decoupling the storage element from a read circuit and in the lower resistance condition coupling the storage element to the read circuit. The read circuit includes a sense amplifier to determine the logic value stored in the memory cell according to an electrical quantity associated with the memory cell. The read circuit further includes a detector that detects the switching of the access element by comparison to a delayed waveform or sensing a change in the column rate of change, and a circuit to enable the sense amplifier in response to the detection of the switching of the access element.
摘要翻译： 存储器包括由相变材料制成的用于存储逻辑值的存储元件（OUM）和响应于存储单元的选择从较高电阻状态切换到较低电阻状态的存取元件（OTS）， 较高电阻条件下的存取元件将存储元件与读取电路分离，并将该存储元件耦合到读取电路的较低电阻条件。 读取电路包括读出放大器，用于根据与存储器单元相关联的电量确定存储单元中存储的逻辑值。 读取电路还包括检测器，其通过与延迟波形进行比较来检测接入元件的切换，或者检测列变化率的变化;以及电路，用于响应于检测到的切换 访问元素
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公开(公告)号：US20070019465A1
公开(公告)日：2007-01-25
申请号：US11527147
申请日：2006-09-26
IPC分类号： G11C11/00
CPC分类号： G11C13/003 , G11C7/062 , G11C7/08 , G11C13/0004 , G11C13/004 , G11C13/0061 , G11C2013/0054 , G11C2013/0071 , G11C2213/76
摘要： A memory includes a storage element (OUM) made of a phase-change material for storing a logic value and an access element (OTS) switching from a higher resistance condition to a lower resistance condition in response to a selection of the memory cell, the access element in the higher resistance condition decoupling the storage element from a read circuit and in the lower resistance condition coupling the storage element to the read circuit. The read circuit includes a sense amplifier to determine the logic value stored in the memory cell according to an electrical quantity associated with the memory cell. The read circuit further includes a detector that detects the switching of the access element by comparison to a delayed waveform or sensing a change in the column rate of change, and a circuit to enable the sense amplifier in response to the detection of the switching of the access element.
摘要翻译： 存储器包括由相变材料制成的用于存储逻辑值的存储元件（OUM）和响应于存储单元的选择从较高电阻状态切换到较低电阻状态的存取元件（OTS）， 较高电阻条件下的存取元件将存储元件与读取电路分离，并将该存储元件耦合到读取电路的较低电阻条件。 读取电路包括读出放大器，用于根据与存储器单元相关联的电量确定存储单元中存储的逻辑值。 读取电路还包括检测器，其通过与延迟波形进行比较来检测接入元件的切换，或者检测列变化率的变化;以及电路，用于响应于检测到的切换 访问元素
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公开(公告)号：US20060221712A1
公开(公告)日：2006-10-05
申请号：US11093877
申请日：2005-03-30
申请人： Tyler Lowrey , Ward Parkinson , Ferdinando Bedeschi , Claudio Resta , Roberto Gastaldi , Giulio Casagrande
发明人： Tyler Lowrey , Ward Parkinson , Ferdinando Bedeschi , Claudio Resta , Roberto Gastaldi , Giulio Casagrande
IPC分类号： G11C7/10
CPC分类号： G11C7/14 , G11C11/5678 , G11C13/0004 , G11C13/004 , G11C2013/0054
摘要： A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read window or margin may be improved in some embodiments.
摘要翻译： 在读取电流改变之后，可以利用使用一个读取电流访问所选位的电压来读取未触发的相变存储器的选定位。 因此，可以使用不同的参考电压来感测比较阻性的选择的单元更多的电阻的状态。 在一些实施例中，可以改善所得到的读取窗口或边缘。
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公开(公告)号：US20060227592A1
公开(公告)日：2006-10-12
申请号：US11093878
申请日：2005-03-30
IPC分类号： G11C11/00
CPC分类号： G11C13/004 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C2013/0045 , G11C2013/0054 , G11C2013/0066 , G11C2213/75 , G11C2213/76
摘要： A read current high enough to threshold a phase change memory element may be used to read the element without thresholding the memory element. The higher current may improve performance in some cases. The memory element does not threshold because the element is read and the current stopped prior to triggering the memory element.
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公开(公告)号：US20110176358A1
公开(公告)日：2011-07-21
申请号：US13072911
申请日：2011-03-28
IPC分类号： G11C11/00
CPC分类号： G11C13/004 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C2013/0045 , G11C2013/0054 , G11C2013/0066 , G11C2213/75 , G11C2213/76
摘要： A read current high enough to threshold a phase change memory element may be used to read the element without thresholding the memory element. The higher current may improve performance in some cases. The memory element does not threshold because the element is read and the current stopped prior to triggering the memory element.
摘要翻译： 可以使用高达阈值相变存储器元件的读取电流来读取元件而不对存储元件进行阈值化。 在某些情况下，较高的电流可能会改善性能。 由于读取元素并且在触发存储器元件之前停止了当前存储器元件，因此存储器元件不会被阈值。
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公开(公告)号：US20120113711A1
公开(公告)日：2012-05-10
申请号：US13353531
申请日：2012-01-19
申请人： Tyler Lowrey , Ward D. Parkinson , Ferdinando Bedeschi , Claudio Resta , Roberto Gastaldi , Giulio Casagrande
发明人： Tyler Lowrey , Ward D. Parkinson , Ferdinando Bedeschi , Claudio Resta , Roberto Gastaldi , Giulio Casagrande
CPC分类号： G11C7/14 , G11C11/5678 , G11C13/0004 , G11C13/004 , G11C2013/0054
摘要： A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read window or margin may be improved in some embodiments,
摘要翻译： 在读取电流改变之后，可以利用使用一个读取电流访问所选位的电压来读取未触发的相变存储器的选定位。 因此，可以使用不同的参考电压来感测比较阻性的选择的单元更多的电阻的状态。 在一些实施例中，可以改善所得到的读取窗口或边缘，
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公开(公告)号：US08116159B2
公开(公告)日：2012-02-14
申请号：US11093877
申请日：2005-03-30
申请人： Tyler Lowrey , Ward D. Parkinson , Ferdinando Bedeschi , Claudio Resta , Roberto Gastaldi , Giulio Casagrande
发明人： Tyler Lowrey , Ward D. Parkinson , Ferdinando Bedeschi , Claudio Resta , Roberto Gastaldi , Giulio Casagrande
IPC分类号： G11C7/14
CPC分类号： G11C7/14 , G11C11/5678 , G11C13/0004 , G11C13/004 , G11C2013/0054
摘要： A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read window or margin may be improved in some embodiments.
摘要翻译： 在读取电流改变之后，可以利用使用一个读取电流访问所选位的电压来读取未触发的相变存储器的选定位。 因此，可以使用不同的参考电压来感测比较阻性的选择的单元更多的电阻的状态。 在一些实施例中，可以改善所得到的读取窗口或边缘。
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公开(公告)号：US08098512B2
公开(公告)日：2012-01-17
申请号：US13072911
申请日：2011-03-28
IPC分类号： G11C11/00
CPC分类号： G11C13/004 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C2013/0045 , G11C2013/0054 , G11C2013/0066 , G11C2213/75 , G11C2213/76
摘要： A read current high enough to threshold a phase change memory element may be used to read the element without thresholding the memory element. The higher current may improve performance in some cases. The memory element does not threshold because the element is read and the current stopped prior to triggering the memory element.
摘要翻译： 可以使用高达阈值相变存储器元件的读取电流来读取元件而不对存储元件进行阈值化。 在某些情况下，较高的电流可能会改善性能。 由于读取元素并且在触发存储器元件之前停止了当前存储器元件，因此存储器元件不会被阈值。
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9.发明申请METHOD FOR MULTILEVEL PROGRAMMING OF PHASE CHANGE CELLS USING ADAPTIVE RESET PULSES 有权使用自适应复位脉冲进行相位变化的多重编程的方法公开(公告)号：US20100284212A1
公开(公告)日：2010-11-11
申请号：US12780580
申请日：2010-05-14
申请人： Ferdinando Bedeschi , Claudio Resta , Enzo Michele Donze , Roberto Gastaldi , Alessandro Cabrini , Guido Torelli
发明人： Ferdinando Bedeschi , Claudio Resta , Enzo Michele Donze , Roberto Gastaldi , Alessandro Cabrini , Guido Torelli
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C11/5678 , G11C13/0004 , G11C13/0064 , G11C2013/0076 , G11C2013/0092
摘要： A method for programming multilevel PCM cells envisages: forming an amorphous region of amorphous phase change material in a storage element of a PCM cell by applying one or more reset pulse; and forming a conductive path of crystalline phase change material through the amorphous region by applying one or more set pulse, a size of the conductive path defining a programmed state of the PCM cell and an output electrical quantity associated thereto, and being controlled by the value of the reset pulse and set pulse. The step of forming an amorphous region envisages adaptively and iteratively determining, during the programming operations, a value of the reset pulse optimized for electrical and/or physical properties of the PCM cell, and in particular determining a minimum amplitude value of the reset pulse, which allows programming a desired programmed state and a desired value of the output electrical quantity.
摘要翻译： 用于编程多电平PCM单元的方法设想：通过施加一个或多个复位脉冲，在PCM单元的存储元件中形成非晶相变材料的非晶区域; 以及通过施加一个或多个设定脉冲，形成所述PCM单元的编程状态的导电路径的大小和与其相关联的输出电量，并通过所述值来控制所述晶体相变材料的导电路径通过所述非晶区域 的复位脉冲和设定脉冲。 形成非晶区域的步骤设想在编程操作期间自适应地和迭代地确定针对PCM单元的电气和/或物理特性优化的复位脉冲的值，特别是确定复位脉冲的最小振幅值， 这允许编程期望的编程状态和输出电量的期望值。
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公开(公告)号：US20120287698A1
公开(公告)日：2012-11-15
申请号：US13555346
申请日：2012-07-23
申请人： Tyler Lowrey , Ward D. Parkinson , Ferdinando Bedeschi , Claudio Resta , Roberto Gastaldi , Giulio Casagrande
发明人： Tyler Lowrey , Ward D. Parkinson , Ferdinando Bedeschi , Claudio Resta , Roberto Gastaldi , Giulio Casagrande
CPC分类号： G11C7/14 , G11C11/5678 , G11C13/0004 , G11C13/004 , G11C2013/0054
摘要： A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read. window or margin may be improved in some embodiments.
摘要翻译： 在读取电流改变之后，可以利用使用一个读取电流访问所选位的电压来读取未触发的相变存储器的选定位。 因此，可以使用不同的参考电压来感测比较阻性的选择的单元更多的电阻的状态。 结果阅读。 在一些实施例中可以改善窗口或边缘。
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