Abstract:
A photovoltaic device is presented. The photovoltaic device includes a buffer layer disposed on a transparent conductive oxide layer; a window layer disposed on the buffer layer; and an interlayer interposed between the transparent conductive oxide layer and the window layer. The interlayer includes a metal species, wherein the metal species includes gadolinium, beryllium, calcium, barium, strontium, scandium, yttrium, hafnium, cerium, lutetium, lanthanum, or combinations thereof. A method of making a photovoltaic device is also presented
Abstract:
A photovoltaic device is presented. The photovoltaic device includes a buffer layer disposed on a transparent conductive oxide layer; a window layer disposed on the buffer layer; and an interlayer interposed between the transparent conductive oxide layer and the window layer. The interlayer includes a metal species, wherein the metal species includes gadolinium, beryllium, calcium, barium, strontium, scandium, yttrium, hafnium, cerium, lutetium, lanthanum, or combinations thereof. A method of making a photovoltaic device is also presented
Abstract:
A method of processing a semiconductor assembly is presented. The method includes fabricating a photovoltaic module including a semiconductor assembly. The fabrication step includes performing an efficiency enhancement treatment on the semiconductor assembly, wherein the efficiency enhancement treatment includes light soaking the semiconductor assembly, and heating the semiconductor assembly. The semiconductor assembly includes a window layer having an average thickness less than about 80 nanometers, wherein the window layer includes cadmium and sulfur. A related system is also presented.
Abstract:
A photovoltaic device is presented. The photovoltaic device includes a buffer layer disposed on a transparent conductive oxide layer; a window layer disposed on the buffer layer; and an interlayer interposed between the transparent conductive oxide layer and the window layer. The interlayer includes a metal species, wherein the metal species includes gadolinium, beryllium, calcium, barium, strontium, scandium, yttrium, hafnium, cerium, lutetium, lanthanum, or combinations thereof. A method of making a photovoltaic device is also presented.
Abstract:
A method of processing a semiconductor assembly is presented. The method includes fabricating a photovoltaic module including a semiconductor assembly. The fabrication step includes performing an efficiency enhancement treatment on the semiconductor assembly, wherein the efficiency enhancement treatment includes light soaking the semiconductor assembly, and heating the semiconductor assembly. The semiconductor assembly includes a window layer having an average thickness less than about 80 nanometers, wherein the window layer includes cadmium and sulfur. A related system is also presented.