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公开(公告)号：US20170288073A1
公开(公告)日：2017-10-05
申请号：US15619674
申请日：2017-06-12
申请人： First Solar, Inc.
发明人： Benyamin Buller , Markus Gloeckler , Akhlesh Gupta , Rick Powell , Rui Shao , Gang Xiong , Ming Lun Yu , Zhibo Zhao
IPC分类号： H01L31/0224 , H01L31/073 , H01L31/0749
CPC分类号： H01L31/022425 , H01L31/073 , H01L31/0749 , Y02E10/541 , Y02E10/543 , Y02P70/521
摘要： Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd1-xMnxTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.
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公开(公告)号：US20150004743A1
公开(公告)日：2015-01-01
申请号：US14317479
申请日：2014-06-27
申请人： First Solar, Inc.
发明人： Pratima Addepalli , Benyamin Buller , Markus Gloeckler , Akhlesh Gupta , David Hwang , Andrei Los , Rick Powell , Rui Shao , Gang Xiong , Ming Lun Yu , San Yu , Zhibo Zhao
IPC分类号： H01L31/18 , H01L31/032
CPC分类号： H01L31/073 , H01L31/1828 , H01L31/1864 , Y02E10/543 , Y02P70/521
摘要： A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.
摘要翻译： 公开了一种改善CdTe基光伏器件的操作的方法，该方法包括以下步骤：将与半导体层相邻的半导体缓冲层沉积在半导体吸收层附近，沉积半导体缓冲层，并退火半导体 吸收层和具有激光和闪光灯之一的半导体缓冲层。
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公开(公告)号：US20150000733A1
公开(公告)日：2015-01-01
申请号：US14317433
申请日：2014-06-27
申请人： First Solar, Inc.
发明人： Benyamin Buller , Markus Gloeckler , Akhlesh Gupta , Rick Powell , Rui Shao , Gang Xiong , Ming Lun Yu , Zhibo Zhao
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/073 , H01L31/0749 , Y02E10/541 , Y02E10/543 , Y02P70/521
摘要： Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd1-xMnxTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.
摘要翻译： 对于光伏器件描述了方法和装置。 光电器件包括玻璃衬底，形成在玻璃衬底上的半导体吸收层，形成在半导体吸收层上的金属背接触层，以及由MnTe，Cd1-xMnxTe和 SnTe，设置在半导体吸收层和金属背接触层之间的缓冲层。
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公开(公告)号：US20200066928A1
公开(公告)日：2020-02-27
申请号：US16665516
申请日：2019-10-28
申请人： First Solar, Inc.
发明人： Benyamin Buller , Markus Gloeckler , Akhlesh Gupta , Rick Powell , Rui Shao , Gang Xiong , Ming Lun Yu , Zhibo Zhao
IPC分类号： H01L31/0224 , H01L31/073 , H01L31/0749
摘要： Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd1-xMnxTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.
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公开(公告)号：US09406829B2
公开(公告)日：2016-08-02
申请号：US14317479
申请日：2014-06-27
申请人： First Solar, Inc.
发明人： Pratima Addepalli , Benyamin Buller , Markus Gloeckler , Akhlesh Gupta , David Hwang , Andrei Los , Rick Powell , Rui Shao , Gang Xiong , Ming Lun Yu , San Yu , Zhibo Zhao
IPC分类号： H01L21/00 , H01L31/073 , H01L31/18
CPC分类号： H01L31/073 , H01L31/1828 , H01L31/1864 , Y02E10/543 , Y02P70/521
摘要： A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.
摘要翻译： 公开了一种改善CdTe基光伏器件的操作的方法，该方法包括以下步骤：将与半导体层相邻的半导体缓冲层沉积在半导体吸收层附近，沉积半导体缓冲层，并退火半导体 吸收层和具有激光和闪光灯之一的半导体缓冲层。
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公开(公告)号：US09383316B2
公开(公告)日：2016-07-05
申请号：US14140687
申请日：2013-12-26
申请人： First Solar, Inc.
CPC分类号： G01N21/5907 , C23C14/544 , G01N21/3103 , G01N21/39 , G01N2021/399
摘要： A method of measuring vapor flux density including directing a light beam through a vapor flux to a pixel array sensor and using the pixel array sensor to measure attenuation of the light beam.
摘要翻译： 一种测量蒸汽通量密度的方法，包括将光束通过蒸气通量引导到像素阵列传感器，并使用像素阵列传感器来测量光束的衰减。
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