Abstract:
Described herein is a method and apparatus for measuring the thickness of a deposited semiconductor material. A colorimeter has an optical source that illuminates a portion of a deposited semiconductor material with optical radiation, a sensor that collects and measures color information related to reflected radiation from the deposited semiconductor material, and a processor that receives the color information related to the reflected radiation from the sensor and calculates a thickness of the semiconductor material. The processor may control a semiconductor material deposition apparatus.
Abstract:
Described herein is a method and apparatus for measuring the thickness of a deposited semiconductor material. A colorimeter has an optical source that illuminates a portion of a deposited semiconductor material with optical radiation, a sensor that collects and measures color information related to reflected radiation from the deposited semiconductor material, and a processor that receives the color information related to the reflected radiation from the sensor and calculates a thickness of the semiconductor material. The processor may control a semiconductor material deposition apparatus.
Abstract:
A method of measuring vapor flux density including directing a light beam through a vapor flux to a pixel array sensor and using the pixel array sensor to measure attenuation of the light beam.
Abstract:
A system and method employing a heater-orifice may be used to heat a flow path and to control the supply of vapor from a vaporizable material to an object. Variable or constant diameter heating rods may be used to apply heat to a flow path in order to control the supply of vapor from a vaporizable material. A baffle plate may be used to control the vapor pressure and vapor flow from a vessel containing a vaporizable material. The heater-orifice, heating rods, and baffle plate may be used alone or in combination with one another to control the flow of vaporizable material.