公开(公告)号：US09853177B2

公开(公告)日：2017-12-26

申请号：US14992304

申请日：2016-01-11

Applicant: First Solar, Inc.

Inventor： San Yu ,  Veluchamy Palaniappagounder ,  Pratima Addepalli ,  Imran Khan

IPC: H01L31/02 ,  H01L31/073 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0336 ,  H01L31/0216

CPC classification number: H01L31/073 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/0336 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device includes a substrate, a transparent conductive oxide, an n-type window layer, a p-type absorber layer and an electron reflector layer. The electron reflector layer may include zinc telluride doped with copper telluride, zinc telluride alloyed with copper telluride, or a bilayer of multiple layers containing zinc, copper, cadmium and tellurium in various compositions. A process for manufacturing a photovoltaic device includes forming a layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming an electron reflector layer over a p-type absorber layer.

公开(公告)号：US20140284750A1

公开(公告)日：2014-09-25

申请号：US14221245

申请日：2014-03-20

Applicant: FIRST SOLAR, INC.

Inventor： San Yu ,  Veluchamy Palaniappagounder ,  Pratima Addepalli ,  Imran Khan

IPC: H01L31/0328 ,  H01L31/18

CPC classification number: H01L31/073 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/0336 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device includes a substrate, a transparent conductive oxide, an n-type window layer, a p-type absorber layer and an electron reflector layer. The electron reflector layer may include zinc telluride doped with copper telluride, zinc telluride alloyed with copper telluride, or a bilayer of multiple layers containing zinc, copper, cadmium and tellurium in various compositions. A process for manufacturing a photovoltaic device includes forming a layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming an electron reflector layer over a p-type absorber layer.

Abstract translation: 光电器件包括衬底，透明导电氧化物，n型窗口层，p型吸收层和电子反射层。 电子反射层可以包括掺杂有碲化铜的碲化锌，与碲化碲合金的碲化镉，或者是各种组成中含有锌，铜，镉和碲的多层双层。 制造光伏器件的方法包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和蒸气迁移沉积工艺中的至少一种在衬底上形成层。 该方法包括在p型吸收层上形成电子反射层。

公开(公告)号：US20160126397A1

公开(公告)日：2016-05-05

申请号：US14992304

申请日：2016-01-11

Applicant: First Solar, Inc.

Inventor： San Yu ,  Veluchamy Palaniappagounder ,  Pratima Addepalli ,  Imran Khan

IPC: H01L31/073 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0224

CPC classification number: H01L31/073 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/0336 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device includes a substrate, a transparent conductive oxide, an n-type window layer, a p-type absorber layer and an electron reflector layer. The electron reflector layer may include zinc telluride doped with copper telluride, zinc telluride alloyed with copper telluride, or a bilayer of multiple layers containing zinc, copper, cadmium and tellurium in various compositions. A process for manufacturing a photovoltaic device includes forming a layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming an electron reflector layer over a p-type absorber layer.

Abstract translation: 光电器件包括衬底，透明导电氧化物，n型窗口层，p型吸收层和电子反射层。 电子反射层可以包括掺杂有碲化铜的碲化锌，与碲化碲合金的碲化镉，或者是各种组成中含有锌，铜，镉和碲的多层双层。 制造光伏器件的方法包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和蒸气迁移沉积工艺中的至少一种在衬底上形成层。 该方法包括在p型吸收层上形成电子反射层。

公开(公告)号：US20150004743A1

公开(公告)日：2015-01-01

申请号：US14317479

申请日：2014-06-27

Applicant: First Solar, Inc.

Inventor： Pratima Addepalli ,  Benyamin Buller ,  Markus Gloeckler ,  Akhlesh Gupta ,  David Hwang ,  Andrei Los ,  Rick Powell ,  Rui Shao ,  Gang Xiong ,  Ming Lun Yu ,  San Yu ,  Zhibo Zhao

IPC: H01L31/18 ,  H01L31/032

CPC classification number: H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.

Abstract translation: 公开了一种改善CdTe基光伏器件的操作的方法，该方法包括以下步骤：将与半导体层相邻的半导体缓冲层沉积在半导体吸收层附近，沉积半导体缓冲层，并退火半导体 吸收层和具有激光和闪光灯之一的半导体缓冲层。

公开(公告)号：US09406829B2

公开(公告)日：2016-08-02

申请号：US14317479

申请日：2014-06-27

Applicant: First Solar, Inc.

Inventor： Pratima Addepalli ,  Benyamin Buller ,  Markus Gloeckler ,  Akhlesh Gupta ,  David Hwang ,  Andrei Los ,  Rick Powell ,  Rui Shao ,  Gang Xiong ,  Ming Lun Yu ,  San Yu ,  Zhibo Zhao

IPC: H01L21/00 ,  H01L31/073 ,  H01L31/18

CPC classification number: H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.

Abstract translation: 公开了一种改善CdTe基光伏器件的操作的方法，该方法包括以下步骤：将与半导体层相邻的半导体缓冲层沉积在半导体吸收层附近，沉积半导体缓冲层，并退火半导体 吸收层和具有激光和闪光灯之一的半导体缓冲层。

公开(公告)号：US09269849B2

公开(公告)日：2016-02-23

申请号：US14221245

申请日：2014-03-20

Applicant: First Solar, Inc.

Inventor： San Yu ,  Veluchamy Palaniappagounder ,  Pratima Addepalli ,  Imran Khan

IPC: H01L31/02 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0336 ,  H01L31/073

CPC classification number: H01L31/073 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/0336 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device includes a substrate, a transparent conductive oxide, an n-type window layer, a p-type absorber layer and an electron reflector layer. The electron reflector layer may include zinc telluride doped with copper telluride, zinc telluride alloyed with copper telluride, or a bilayer of multiple layers containing zinc, copper, cadmium and tellurium in various compositions. A process for manufacturing a photovoltaic device includes forming a layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming an electron reflector layer over a p-type absorber layer.

Abstract translation: 光电器件包括衬底，透明导电氧化物，n型窗口层，p型吸收层和电子反射层。 电子反射层可以包括掺杂有碲化铜的碲化锌，与碲化碲合金的碲化镉，或者是各种组成中含有锌，铜，镉和碲的多层双层。 制造光伏器件的方法包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和蒸气迁移沉积工艺中的至少一种在衬底上形成层。 该方法包括在p型吸收层上形成电子反射层。