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公开(公告)号：US07589379B2
公开(公告)日：2009-09-15
申请号：US10936721
申请日：2004-09-09
IPC分类号： H01L29/72
CPC分类号： H01L29/7824 , H01L21/84 , H01L27/1203 , H01L29/41725 , H01L29/4175 , H01L29/42368 , H01L29/78603 , H01L29/78624
摘要： This invention is generally concerned with power semiconductors such as power MOS transistors, insulated gate by bipolar transistors (IGBTs), high voltage diodes and the like, and methods for their fabrication.A power semiconductor, the semiconductor comprising: a power device, said power device having first and second electrical contact regions and a drift region extending therebetween; and a semiconductor substrate mounting said device; and wherein said power semiconductor includes an electrically insulating layer between said semiconductor substrate and said power device, said electrically insulating layer having a thickness of at least 5 μm.
摘要翻译： 本发明一般涉及诸如功率MOS晶体管，双极晶体管（IGBT）的绝缘栅极，高压二极管等功率半导体及其制造方法。 功率半导体，所述半导体包括：功率器件，所述功率器件具有第一和第二电接触区域和在其间延伸的漂移区域; 以及安装所述装置的半导体衬底; 并且其中所述功率半导体在所述半导体衬底和所述功率器件之间包括电绝缘层，所述电绝缘层具有至少5μm的厚度。
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公开(公告)号：US06445054B1
公开(公告)日：2002-09-03
申请号：US09636353
申请日：2000-08-10
IPC分类号： H01L2358
CPC分类号： H01L29/0619 , H01L29/0638 , H01L29/0847 , H01L29/7397 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device comprises an active area with a voltage termination structure located adjacent to the active area at an edge portion of the device. The edge portion comprises a substrate region (12) of a first semiconductor type. The voltage termination structure comprises at least one first termination region (11) of a second semiconductor type, the or each first termination region having at least one of either second and third termination regions (11a, 11b) of third and fourth semiconductor types located at substantially opposing edges thereof. The second and third termination regions (11a, 11b) respectively have a higher semiconductor doping concentration than the edge portion substrate region (12) and a lower semiconductor doping concentration than the first termination region(s) (11).
摘要翻译： 一种半导体器件包括具有电压终端结构的有源区，位于器件的边缘部分附近与有源区相邻。 边缘部分包括第一半导体类型的衬底区域（12）。 电压端接结构包括至少一个第二半导体类型的第一端接区域（11），该或每个第一端接区域具有第三和第四半导体类型的第二和第三端接区域（11a，11b）中的至少一个位于 基本相对的边缘。 第二和第三端接区域（11a，11b）分别具有比边缘部分衬底区域（12）更高的半导体掺杂浓度和比第一端接区域（11）更低的半导体掺杂浓度。
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公开(公告)号：US07679160B2
公开(公告)日：2010-03-16
申请号：US11216197
申请日：2005-09-01
IPC分类号： H01L29/93
CPC分类号： H01L29/86 , H01L21/84 , H01L27/1203 , H01L29/0634 , H01L29/66325 , H01L29/7317 , H01L29/7394 , H01L29/7824 , H01L29/78603 , H01L29/868 , H02M7/003
摘要： A high voltage/power semiconductor device has at least one active region having a plurality of high voltage junctions electrically connected in parallel. At least part of each of the high voltage junctions is located in or on a respective membrane such that the active region is provided at least in part over plural membranes. There are non-membrane regions between the membranes. The device has a low voltage terminal and a high voltage terminal. At least a portion of the low voltage terminal and at least a portion of the high voltage terminal are connected directly or indirectly to a respective one of the high voltage junctions. At least those portions of the high voltage terminal that are in direct or indirect contact with one of the high voltage junctions are located on or in a respective one of the plural membranes.
摘要翻译： 高电压/功率半导体器件具有至少一个有源区，其具有并联电连接的多个高电压结。 每个高电压接头的至少一部分位于相应的膜中或上，使得有源区至少部分地设置在多个膜上。 膜之间有非膜区。 该器件具有低电压端子和高压端子。 低电压端子的至少一部分和高电压端子的至少一部分直接或间接地连接到相应的一个高压接点。 至少与高压接点中的一个直接或间接接触的高压端子的那些部分位于多个膜中的相应的一个上或其中。
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公开(公告)号：US07355226B2
公开(公告)日：2008-04-08
申请号：US11414308
申请日：2006-05-01
IPC分类号： H01L29/786
CPC分类号： H01L29/7824 , H01L21/84 , H01L27/1203 , H01L29/41725 , H01L29/4175 , H01L29/42368 , H01L29/78603 , H01L29/78624
摘要： This invention is generally concerned with power semiconductors such as power MOS transistors, insulated gate by bipolar transistors (IGBTs), high voltage diodes and the like, and method for their fabrication. A power semiconductor, the semiconductor comprising a power device, said power device having first and second electrical contact regions and a drift region extending therebetween; and a semiconductor substrate mounting said device; and wherein said power semiconductor includes an electrically insulating layer between said semiconductor substrate and said power device, said electrically insulating layer having a thickness of at least 5 μm.
摘要翻译： 本发明通常涉及诸如功率MOS晶体管，双极晶体管（IGBT），高压二极管等的绝缘栅极等功率半导体及其制造方法。 功率半导体，所述半导体包括功率器件，所述功率器件具有第一和第二电接触区域以及在其间延伸的漂移区域; 以及安装所述装置的半导体衬底; 并且其中所述功率半导体在所述半导体衬底和所述功率器件之间包括电绝缘层，所述电绝缘层具有至少5μm的厚度。
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公开(公告)号：US08304316B2
公开(公告)日：2012-11-06
申请号：US11961410
申请日：2007-12-20
IPC分类号： H01L21/336
CPC分类号： H01L29/0657 , H01L21/8249 , H01L22/26 , H01L29/063 , H01L29/402 , H01L29/41725 , H01L29/41758 , H01L29/41775 , H01L29/7393 , H01L29/7816
摘要： In a power semiconductor device and a method of forming a power semiconductor device, a thin layer of semiconductor substrate is left below the drift region of a semiconductor device. A power semiconductor device has an active region that includes the drift region and has top and bottom surfaces formed in a layer provided on a semiconductor substrate. A portion of the semiconductor substrate below the active region is removed to leave a thin layer of semiconductor substrate below the drift region. Electrical terminals are provided directly or indirectly to the top surface of the active region to allow a voltage to be applied laterally across the drift region.
摘要翻译： 在功率半导体器件和形成功率半导体器件的方法中，将半导体衬底的薄层留在半导体器件的漂移区域的下方。 功率半导体器件具有包括漂移区的有源区，并且具有形成在设置在半导体衬底上的层中的顶表面和底表面。 在有源区下面的半导体衬底的一部分被去除以在漂移区下方留下半导体衬底的薄层。 电端子直接或间接提供到有源区的顶表面，以允许电压横向跨越漂移区域施加。
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公开(公告)号：US20100283514A1
公开(公告)日：2010-11-11
申请号：US12677131
申请日：2008-08-28
IPC分类号： G05F3/02
CPC分类号： H01L29/7397 , H01L29/0834 , H03K17/08128 , H03K17/0828
摘要： In a reverse conducting semiconductor device, which forms a composition circuit, a positive voltage that is higher than a positive voltage of a collector electrode may be applied to an emitter electrode. In this case, in a region of the reverse conducting semiconductor device in which a return diode is formed, a body contact region functions as an anode, a drift contact region functions as a cathode, and current flows from the anode to the cathode. When a voltage having a lower electric potential than the collector electrode is applied to the trench gate electrode at that time, p-type carriers are generated within the cathode and a quantity of carriers increases within the return diode. As a result, a forward voltage drop of the return diode lowers, and constant loss of electric power can be reduced. Electric power loss can be reduced in a power supply device that uses such a composition circuit in which a switching element and the return diode are connected in reverse parallel.
摘要翻译： 在形成合成电路的反向导通半导体器件中，可以将高于集电极的正电压的正电压施加到发射极。 在这种情况下，在形成有返回二极管的反向导通半导体器件的区域中，体接触区域用作阳极，漂移接触区域用作阴极，并且电流从阳极流到阴极。 此时当沟槽栅电极施加具有比集电极电位低的电压的电压时，在阴极内产生p型载流子，在返回二极管内增加载流子数量。 结果，返回二极管的正向压降降低，并且可以减少电力的恒定损失。 在使用其中开关元件和返回二极管反向并联连接的组合电路的电源装置中，电力损耗可以减小。
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公开(公告)号：US08531857B2
公开(公告)日：2013-09-10
申请号：US12677131
申请日：2008-08-28
IPC分类号： H02M7/5387
CPC分类号： H01L29/7397 , H01L29/0834 , H03K17/08128 , H03K17/0828
摘要： In a reverse conducting semiconductor device, which forms a composition circuit, a positive voltage that is higher than a positive voltage of a collector electrode may be applied to an emitter electrode. In this case, in a region of the reverse conducting semiconductor device in which a return diode is formed, a body contact region functions as an anode, a drift contact region functions as a cathode, and current flows from the anode to the cathode. When a voltage having a lower electric potential than the collector electrode is applied to the trench gate electrode at that time, p-type carriers are generated within the cathode and a quantity of carriers increases within the return diode. As a result, a forward voltage drop of the return diode lowers, and constant loss of electric power can be reduced. Electric power loss can be reduced in a power supply device that uses such a composition circuit in which a switching element and the return diode are connected in reverse parallel.
摘要翻译： 在形成合成电路的反向导通半导体器件中，可以将高于集电极的正电压的正电压施加到发射极。 在这种情况下，在形成有返回二极管的反向导通半导体器件的区域中，体接触区域用作阳极，漂移接触区域用作阴极，并且电流从阳极流到阴极。 此时当沟槽栅电极施加具有比集电极电位低的电压的电压时，在阴极内产生p型载流子，在返回二极管内增加载流子数量。 结果，返回二极管的正向压降降低，并且可以减少电力的恒定损失。 在使用其中开关元件和返回二极管反向并联连接的组合电路的电源装置中，电力损耗可以减小。
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公开(公告)号：US06693340B1
公开(公告)日：2004-02-17
申请号：US09870040
申请日：2001-05-30
IPC分类号： H01L2358
CPC分类号： H01L29/0634 , H01L29/0688 , H01L29/0692 , H01L29/0696 , H01L29/41758 , H01L29/7824 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： A lateral semiconductor device has a semiconductor layer on an insulating layer on a semiconductor substrate. The semiconductor layer has a region of a first conduction type and a region of a second conduction type with a drift region therebetween. The drift region is provided by a region of the first conduction type and a region of the second conduction type. The first and second conduction type drift regions are so arranged that when a reverse voltage bias is applied across the first and second conduction type regions of the semiconductor layer, the second conduction type drift region has an excess of charge relative to the first conduction type drift region which varies substantially linearly from the end of the drift region towards the first conduction type region of the semiconductor layer to the end of the drift region towards the second conduction type region of the semiconductor layer.
摘要翻译： 横向半导体器件在半导体衬底上的绝缘层上具有半导体层。 半导体层具有第一导电类型的区域和具有漂移区域的第二导电类型的区域。 漂移区域由第一导电类型的区域和第二导电类型的区域提供。 第一和第二导电类型漂移区域被布置成使得当跨越半导体层的第一和第二导电类型区域施加反向电压偏压时，第二导电类型漂移区域相对于第一导电类型漂移具有过量的电荷 区域，其从漂移区域的端部朝向半导体层的第一导电类型区域到漂移区域的端部朝向半导体层的第二导电类型区域基本上线性地变化。
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公开(公告)号：US06426520B1
公开(公告)日：2002-07-30
申请号：US09636111
申请日：2000-08-10
IPC分类号： H01L2974
CPC分类号： H01L29/0619 , H01L29/0615 , H01L29/0623 , H01L29/402 , H01L29/7455 , H01L29/749 , H01L29/7811
摘要： A semiconductor device comprises an active area with a voltage termination structure located adjacent to the active area at an edge portion of the device. The edge portion comprises a substrate region (23, 24) of a first semiconductor type, and the voltage termination structure comprises first and second layers (21 and 22) formed within the substrate region. The first and second layers (21 and 22) define regions each of a second semiconductor type.
摘要翻译： 一种半导体器件包括具有电压终端结构的有源区，位于器件的边缘部分附近与有源区相邻。 边缘部分包括第一半导体类型的衬底区域（23,24），并且电压终端结构包括形成在衬底区域内的第一和第二层（21和22）。 第一和第二层（21和22）限定每个第二半导体类型的区域。
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公开(公告)号：US08053783B2
公开(公告)日：2011-11-08
申请号：US11575114
申请日：2005-09-08
申请人： Gehan Anil Joseph Amaratunga , Mihai Brezeanu , Jeremy Suhail Rashid , Nalin Lalith Rupesinghe , Antonella Tajani , Daniel James Twitchen , Florin Udrea , Christopher John Howard Wort
发明人： Gehan Anil Joseph Amaratunga , Mihai Brezeanu , Jeremy Suhail Rashid , Nalin Lalith Rupesinghe , Antonella Tajani , Daniel James Twitchen , Florin Udrea , Christopher John Howard Wort
CPC分类号： H01L31/108 , H01L31/028 , H01L31/0288 , H01L31/118 , Y02E10/547
摘要： A high voltage diamond based switching device capable of sustaining high currents in the on state with a relatively low impedance and a relatively low optical switching flux, and capable of being switched off in the presence of the high voltage being switched. The device includes a diamond body having a Schottky barrier contact, held in reverse bias by the applied voltage to be switched, to an essentially intrinsic diamond layer or portion in the diamond body, a second metal contact, and an optical source or other illuminating or irradiating device such that when the depletion region formed by the Schottky contact to the intrinsic diamond layer is exposed to its radiation charge carriers are generated. Cain in the total number of charge carriers then occurs as a result of these charge carriers accelerating under the field within the intrinsic diamond layer and generating further carriers by assisted avalanche breakdown.
摘要翻译： 一种高电压金刚石开关器件，能够以较低阻抗和相对低的光开关通量在导通状态下维持高电流，并且能够在存在正在切换的高电压的情况下被关断。 该装置包括具有肖特基势垒接触件的金刚石体，通过施加的被切换的电压以相反的偏置保持在金刚石本体中的基本上本征的金刚石层或部分，第二金属接触和光源或其它照明或 照射装置，使得当通过与本征金刚石层的肖特基接触形成的耗尽区域暴露于其辐射电荷载体时。 因此，由于这些电荷载流子在本征金刚石层内的场下加速并且通过辅助的雪崩击穿而产生另外的载流子，所以导致电荷载流子总数的隐藏。
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