Ultra-low energy micro-fluid ejection device
    1.
    发明授权
    Ultra-low energy micro-fluid ejection device 有权
    超低能量微流体喷射装置

    公开(公告)号:US07178904B2

    公开(公告)日:2007-02-20

    申请号:US10986338

    申请日:2004-11-11

    IPC分类号: B41J2/05 H05B3/00

    摘要: A micro-fluid ejection device for ultra-small droplet ejection and method of making a micro-fluid ejection device. The micro-fluid ejection device includes a semiconductor substrate containing a plurality of thermal ejection actuators disposed thereon. Each of the thermal ejection actuators includes a resistive layer and a protective layer for protecting a surface of the resistive layer. The resistive layer and the protective layer together define an actuator stack thickness. The actuator stack thickness ranges from about 500 to about 2000 Angstroms and provides an ejection energy per unit volume of from about 10 to about 20 gigajoules per cubic meter. A nozzle plate is attached to the semiconductor substrate to provide the micro-fluid ejection device.

    摘要翻译: 用于超小液滴喷射的微流体喷射装置和制造微流体喷射装置的方法。 微流体喷射装置包括含有多个设置在其上的热喷射致动器的半导体基板。 每个热喷射致动器包括电阻层和用于保护电阻层的表面的保护层。 电阻层和保护层一起限定致动器堆叠厚度。 致动器堆叠厚度范围为约500至约2000埃,并且每单位体积提供约10至约20千兆焦耳/立方米的喷射能量。 喷嘴板附接到半导体衬底以提供微流体喷射装置。

    ELECTRONIC DEVICES AND METHODS FOR FORMING THE SAME
    2.
    发明申请
    ELECTRONIC DEVICES AND METHODS FOR FORMING THE SAME 审中-公开
    电子设备及其形成方法

    公开(公告)号:US20080268584A1

    公开(公告)日:2008-10-30

    申请号:US12116271

    申请日:2008-05-07

    IPC分类号: H01L21/336

    摘要: Methods for forming electronic devices, such as those having a flexible substrate and printed material on the flexible substrate. In one embodiment, the method may include applying materials to a flexible substrate to form the electronic device. At least some of the materials applied to the flexible substrate may be applied using a printing apparatus. The substrate may be annealed when at least some of the materials are present on the flexible substrate. The resulting electronic device may have a high charge carrier mobility in the range from about 10 cm2/V-s to about 100 cm2/V-s.

    摘要翻译: 用于形成诸如在柔性基底上具有柔性基底和印刷材料的电子器件的方法。 在一个实施例中,该方法可以包括将材料应用于柔性基板以形成电子设备。 施加到柔性基板上的至少一些材料可以使用印刷装置来施加。 当至少一些材料存在于柔性基底上时,基底可以退火。 所得到的电子器件可以具有在约10cm 2 / V-s至约100cm 2 / V-s范围内的高电荷载流子迁移率。

    LOW EJECTION ENERGY MICRO-FLUID EJECTION HEADS
    4.
    发明申请
    LOW EJECTION ENERGY MICRO-FLUID EJECTION HEADS 有权
    低喷射能量微流体喷射头

    公开(公告)号:US20100213165A1

    公开(公告)日:2010-08-26

    申请号:US12758161

    申请日:2010-04-12

    IPC分类号: C23F1/00 B21D53/76

    摘要: A micro-fluid ejection device structure and method therefor having improved low energy design. The devices include a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.

    摘要翻译: 一种具有改进的低能量设计的微流体喷射装置结构及其方法。 这些器件包括沉积在半导体衬底上的半导体衬底和绝缘层。 在选自TaAl,Ta2N,TaAl(O,N),TaAlSi,Ti(N,O),WSi(O,N),TaAlN等的电阻层的绝缘层上形成多个加热电阻体, 和TaAl / TaAlN。 选自可氧化金属并且具有约500至约5000埃的厚度的牺牲层沉积在多个加热电阻器上。 电极从第一金属导电层形成在牺牲层上,以提供与多个加热电阻器的阳极和阴极连接。 牺牲层在等离子体氧化过程中被氧化以在多个加热电阻器上提供流体接触层。

    Low ejection energy micro-fluid ejection heads
    5.
    发明授权
    Low ejection energy micro-fluid ejection heads 失效
    低喷射能量微流体喷射头

    公开(公告)号:US07749397B2

    公开(公告)日:2010-07-06

    申请号:US11673795

    申请日:2007-02-12

    IPC分类号: G01D15/00 G11B5/127

    摘要: A micro-fluid ejection device structure and method therefor having improved low energy design. The devices includes a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.

    摘要翻译: 一种具有改进的低能量设计的微流体喷射装置结构及其方法。 这些器件包括沉积在半导体衬底上的半导体衬底和绝缘层。 在选自TaAl,Ta2N,TaAl(O,N),TaAlSi,Ti(N,O),WSi(O,N),TaAlN等的电阻层的绝缘层上形成多个加热电阻体, 和TaAl / TaAlN。 选自可氧化金属并且具有约500至约5000埃的厚度的牺牲层沉积在多个加热电阻器上。 电极从第一金属导电层形成在牺牲层上,以提供与多个加热电阻器的阳极和阴极连接。 牺牲层在等离子体氧化过程中被氧化以在多个加热电阻器上提供流体接触层。

    Low ejection energy micro-fluid ejection heads
    6.
    发明授权
    Low ejection energy micro-fluid ejection heads 有权
    低喷射能量微流体喷射头

    公开(公告)号:US08366952B2

    公开(公告)日:2013-02-05

    申请号:US12758161

    申请日:2010-04-12

    IPC分类号: G01D15/00 G11B5/127

    摘要: A micro-fluid ejection device structure and method therefor having improved low energy design. The devices include a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.

    摘要翻译: 一种具有改进的低能量设计的微流体喷射装置结构及其方法。 这些器件包括沉积在半导体衬底上的半导体衬底和绝缘层。 在选自TaAl,Ta2N,TaAl(O,N),TaAlSi,Ti(N,O),WSi(O,N),TaAlN等的电阻层的绝缘层上形成多个加热电阻体, 和TaAl / TaAlN。 选自可氧化金属并且具有约500至约5000埃的厚度的牺牲层沉积在多个加热电阻器上。 电极从第一金属导电层形成在牺牲层上,以提供与多个加热电阻器的阳极和阴极连接。 牺牲层在等离子体氧化过程中被氧化以在多个加热电阻器上提供流体接触层。

    Electronic devices and methods for forming the same
    7.
    发明授权
    Electronic devices and methods for forming the same 有权
    电子设备及其形成方法

    公开(公告)号:US07414262B2

    公开(公告)日:2008-08-19

    申请号:US11241221

    申请日:2005-09-30

    IPC分类号: H01L29/06

    摘要: Electronic devices, such as those having a flexible substrate and printed material on the flexible substrate. In one embodiment, the printed material and substrate are part of an electronic device having at least three terminals, wherein the electronic device has a charge carrier mobility of at least 10 cm2/V-s. Multi-terminal devices can have a substrate including a doped semiconductor layer and at least two doped regions formed upon the substrate. The doped regions can be doped oppositely from the semiconductor layer and exhibit a charge carrier mobility of greater than 10 cm2/V-s. Methods for making the same are also disclosed.

    摘要翻译: 诸如在柔性基底上具有柔性基底和印刷材料的电子器件。 在一个实施例中,印刷材料和基底是具有至少三个端子的电子器件的一部分,其中电子器件具有至少10cm 2 / V-s的电荷载流子迁移率。 多端子器件可以具有包括掺杂半导体层和形成在衬底上的至少两个掺杂区的衬底。 掺杂区域可以与半导体层相反地掺杂并且表现出大于10cm 2 / V-s的电荷载流子迁移率。 还公开了制备其的方法。

    Low ejection energy micro-fluid ejection heads
    8.
    发明授权
    Low ejection energy micro-fluid ejection heads 有权
    低喷射能量微流体喷射头

    公开(公告)号:US07195343B2

    公开(公告)日:2007-03-27

    申请号:US10927796

    申请日:2004-08-27

    IPC分类号: B41J2/05

    摘要: A micro-fluid ejection device structure and method therefor having improved low energy design. The devices includes a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.

    摘要翻译: 一种具有改进的低能量设计的微流体喷射装置结构及其方法。 这些器件包括沉积在半导体衬底上的半导体衬底和绝缘层。 在选自TaAl,Ta2N,TaAl(O,N),TaAlSi,Ti(N,O),WSi(O,N),TaAlN等的电阻层的绝缘层上形成多个加热电阻体, 和TaAl / TaAlN。 选自可氧化金属并且具有约500至约5000埃的厚度的牺牲层沉积在多个加热电阻器上。 电极从第一金属导电层形成在牺牲层上,以提供与多个加热电阻器的阳极和阴极连接。 牺牲层在等离子体氧化过程中被氧化,以在多个加热电阻器上提供流体接触层。

    Micro-fluid ejection devices
    10.
    发明授权
    Micro-fluid ejection devices 有权
    微流体喷射装置

    公开(公告)号:US07165831B2

    公开(公告)日:2007-01-23

    申请号:US10921657

    申请日:2004-08-19

    IPC分类号: B41J2/05

    摘要: A micro-fluid ejection head structure having multiple arrays of fluid ejection actuators. The structure includes a semiconductor substrate having a first array of fluid ejection actuators for ejecting a first fluid therefrom, and a second array of fluid ejection actuators for ejecting a second fluid therefrom. The first array of fluid ejection actuators is disposed in a first location on the substrate, and the second array of fluid ejection actuators is disposed in a second location on the substrate. A thick film layer having a thickness is attached adjacent the semiconductor substrate. The thick film layer has fluid flow channels formed therein solely for the first array of fluid ejection actuators. A nozzle plate is attached to the thick film layer opposite the semiconductor substrate. The nozzle plate has fluid flow channels formed therein for both the first array of fluid ejection actuators and the second array of fluid ejection actuators.

    摘要翻译: 具有多个流体喷射致动器阵列的微流体喷射头结构。 该结构包括具有用于从其喷射第一流体的第一流体喷射致动器阵列的半导体衬底,以及用于从其喷射第二流体的第二流体喷射致动器阵列。 流体喷射致动器的第一阵列设置在基板上的第一位置,并且流体喷射致动器的第二阵列设置在基板上的第二位置。 具有厚度的厚膜层附着在半导体衬底附近。 厚膜层仅在第一阵列的流体喷射致动器中形成流体流动通道。 喷嘴板附着在与半导体衬底相对的厚膜层上。 喷嘴板具有形成在其中的流体流动通道,用于流体喷射致动器的第一阵列和流体喷射致动器的第二阵列。