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公开(公告)号:US06902256B2
公开(公告)日:2005-06-07
申请号:US10621018
申请日:2003-07-16
申请人: Frank E. Anderson , Byron V. Bell , Carl E. Sullivan , Paul A Cook , Robert W. Cornell , George K. Parish
发明人: Frank E. Anderson , Byron V. Bell , Carl E. Sullivan , Paul A Cook , Robert W. Cornell , George K. Parish
CPC分类号: B41J2/17556 , B41J2/14129 , B41J2/17506 , B41J2/17513 , B41J2202/03 , B41J2202/13
摘要: An ink jet printer including a printer cartridge containing a printhead attached to a cartridge carriage for translation of the cartridge across a print media. The printer also includes an off carriage ink supply, a printer microprocessor, and a combined ink fill tube and electrical connection cable connected between the cartridge and the off carriage ink supply for providing refill ink to the ink cartridge and control of the carriage and printhead. Improvements to the printer enable low cost, high quality printing to be achieved.
摘要翻译: 一种喷墨打印机,包括一个打印机墨盒,该打印机墨盒包含一个连接到墨盒托架的打印头,用于使打印墨盒平移印刷介质。 该打印机还包括一个卸载墨盒,一个打印机微处理器以及一个连接在墨盒和卸载墨盒之间的组合墨水填充管和电连接电缆,用于向墨盒提供再填充墨水并控制滑架和打印头。 对打印机的改进使得能够实现低成本,高质量的打印。
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公开(公告)号:US08366952B2
公开(公告)日:2013-02-05
申请号:US12758161
申请日:2010-04-12
CPC分类号: B41J2/1603 , B41J2/14129 , B41J2/1628 , B41J2/164 , Y10T29/49401
摘要: A micro-fluid ejection device structure and method therefor having improved low energy design. The devices include a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.
摘要翻译: 一种具有改进的低能量设计的微流体喷射装置结构及其方法。 这些器件包括沉积在半导体衬底上的半导体衬底和绝缘层。 在选自TaAl,Ta2N,TaAl(O,N),TaAlSi,Ti(N,O),WSi(O,N),TaAlN等的电阻层的绝缘层上形成多个加热电阻体, 和TaAl / TaAlN。 选自可氧化金属并且具有约500至约5000埃的厚度的牺牲层沉积在多个加热电阻器上。 电极从第一金属导电层形成在牺牲层上,以提供与多个加热电阻器的阳极和阴极连接。 牺牲层在等离子体氧化过程中被氧化以在多个加热电阻器上提供流体接触层。
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公开(公告)号:US07195343B2
公开(公告)日:2007-03-27
申请号:US10927796
申请日:2004-08-27
IPC分类号: B41J2/05
CPC分类号: B41J2/1603 , B41J2/14129 , B41J2/1628 , B41J2/164 , Y10T29/49401
摘要: A micro-fluid ejection device structure and method therefor having improved low energy design. The devices includes a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.
摘要翻译: 一种具有改进的低能量设计的微流体喷射装置结构及其方法。 这些器件包括沉积在半导体衬底上的半导体衬底和绝缘层。 在选自TaAl,Ta2N,TaAl(O,N),TaAlSi,Ti(N,O),WSi(O,N),TaAlN等的电阻层的绝缘层上形成多个加热电阻体, 和TaAl / TaAlN。 选自可氧化金属并且具有约500至约5000埃的厚度的牺牲层沉积在多个加热电阻器上。 电极从第一金属导电层形成在牺牲层上,以提供与多个加热电阻器的阳极和阴极连接。 牺牲层在等离子体氧化过程中被氧化,以在多个加热电阻器上提供流体接触层。
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公开(公告)号:US20100213165A1
公开(公告)日:2010-08-26
申请号:US12758161
申请日:2010-04-12
CPC分类号: B41J2/1603 , B41J2/14129 , B41J2/1628 , B41J2/164 , Y10T29/49401
摘要: A micro-fluid ejection device structure and method therefor having improved low energy design. The devices include a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.
摘要翻译: 一种具有改进的低能量设计的微流体喷射装置结构及其方法。 这些器件包括沉积在半导体衬底上的半导体衬底和绝缘层。 在选自TaAl,Ta2N,TaAl(O,N),TaAlSi,Ti(N,O),WSi(O,N),TaAlN等的电阻层的绝缘层上形成多个加热电阻体, 和TaAl / TaAlN。 选自可氧化金属并且具有约500至约5000埃的厚度的牺牲层沉积在多个加热电阻器上。 电极从第一金属导电层形成在牺牲层上,以提供与多个加热电阻器的阳极和阴极连接。 牺牲层在等离子体氧化过程中被氧化以在多个加热电阻器上提供流体接触层。
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公开(公告)号:US07749397B2
公开(公告)日:2010-07-06
申请号:US11673795
申请日:2007-02-12
CPC分类号: B41J2/1603 , B41J2/14129 , B41J2/1628 , B41J2/164 , Y10T29/49401
摘要: A micro-fluid ejection device structure and method therefor having improved low energy design. The devices includes a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.
摘要翻译: 一种具有改进的低能量设计的微流体喷射装置结构及其方法。 这些器件包括沉积在半导体衬底上的半导体衬底和绝缘层。 在选自TaAl,Ta2N,TaAl(O,N),TaAlSi,Ti(N,O),WSi(O,N),TaAlN等的电阻层的绝缘层上形成多个加热电阻体, 和TaAl / TaAlN。 选自可氧化金属并且具有约500至约5000埃的厚度的牺牲层沉积在多个加热电阻器上。 电极从第一金属导电层形成在牺牲层上,以提供与多个加热电阻器的阳极和阴极连接。 牺牲层在等离子体氧化过程中被氧化以在多个加热电阻器上提供流体接触层。
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公开(公告)号:US07354794B2
公开(公告)日:2008-04-08
申请号:US11062019
申请日:2005-02-18
IPC分类号: H01L21/00
CPC分类号: B41J2/14072 , H01L2224/48091 , H01L2224/73265 , Y10T29/49401 , H01L2924/00014
摘要: Methods of connecting a circuit device to a semiconductor substrate and micro-fluid ejection devices made by the methods. One method includes printing an elongate strip of an electrically conductive fluid to electrically interconnect a first contact pad on a semiconductor substrate containing fluid ejection actuator devices with a second contact pad on an electrical trace circuit, wherein the electrical trace circuit is disposed adjacent to and spaced-apart from the semiconductor substrate. The electrically conductive fluid contains a liquid component and a conductive particle component. The liquid component is removed from the conductive particle component to provide a solid elongate strip of conductive material interconnecting the first contact pad and the second contact pad.
摘要翻译: 将电路装置与半导体基板连接的方法和由该方法制成的微流体喷射装置。 一种方法包括印刷导电流体的细长条以将包含流体喷射致动器装置的半导体衬底上的第一接触焊盘与电迹线电路上的第二接触焊盘电互连,其中电迹线电路邻近并间隔开 从半导体衬底放置。 导电流体包含液体组分和导电颗粒组分。 将液体组分从导电颗粒组分移除以提供将第一接触垫和第二接触垫相互连接的导电材料的实心细长带。
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公开(公告)号:US07414262B2
公开(公告)日:2008-08-19
申请号:US11241221
申请日:2005-09-30
申请人: Frank E. Anderson , Robert W. Cornell , Yimin Guan
发明人: Frank E. Anderson , Robert W. Cornell , Yimin Guan
IPC分类号: H01L29/06
CPC分类号: H01L29/78603 , H01L27/1292 , H01L29/66757 , H01L29/74
摘要: Electronic devices, such as those having a flexible substrate and printed material on the flexible substrate. In one embodiment, the printed material and substrate are part of an electronic device having at least three terminals, wherein the electronic device has a charge carrier mobility of at least 10 cm2/V-s. Multi-terminal devices can have a substrate including a doped semiconductor layer and at least two doped regions formed upon the substrate. The doped regions can be doped oppositely from the semiconductor layer and exhibit a charge carrier mobility of greater than 10 cm2/V-s. Methods for making the same are also disclosed.
摘要翻译: 诸如在柔性基底上具有柔性基底和印刷材料的电子器件。 在一个实施例中,印刷材料和基底是具有至少三个端子的电子器件的一部分,其中电子器件具有至少10cm 2 / V-s的电荷载流子迁移率。 多端子器件可以具有包括掺杂半导体层和形成在衬底上的至少两个掺杂区的衬底。 掺杂区域可以与半导体层相反地掺杂并且表现出大于10cm 2 / V-s的电荷载流子迁移率。 还公开了制备其的方法。
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公开(公告)号:US07178904B2
公开(公告)日:2007-02-20
申请号:US10986338
申请日:2004-11-11
CPC分类号: B41J2/14129 , B41J2/1404 , B41J2/1412 , B41J2002/14387 , Y10T29/49083
摘要: A micro-fluid ejection device for ultra-small droplet ejection and method of making a micro-fluid ejection device. The micro-fluid ejection device includes a semiconductor substrate containing a plurality of thermal ejection actuators disposed thereon. Each of the thermal ejection actuators includes a resistive layer and a protective layer for protecting a surface of the resistive layer. The resistive layer and the protective layer together define an actuator stack thickness. The actuator stack thickness ranges from about 500 to about 2000 Angstroms and provides an ejection energy per unit volume of from about 10 to about 20 gigajoules per cubic meter. A nozzle plate is attached to the semiconductor substrate to provide the micro-fluid ejection device.
摘要翻译: 用于超小液滴喷射的微流体喷射装置和制造微流体喷射装置的方法。 微流体喷射装置包括含有多个设置在其上的热喷射致动器的半导体基板。 每个热喷射致动器包括电阻层和用于保护电阻层的表面的保护层。 电阻层和保护层一起限定致动器堆叠厚度。 致动器堆叠厚度范围为约500至约2000埃,并且每单位体积提供约10至约20千兆焦耳/立方米的喷射能量。 喷嘴板附接到半导体衬底以提供微流体喷射装置。
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公开(公告)号:US20080268584A1
公开(公告)日:2008-10-30
申请号:US12116271
申请日:2008-05-07
申请人: Frank E. Anderson , Robert W. Cornell , Yimin Guan
发明人: Frank E. Anderson , Robert W. Cornell , Yimin Guan
IPC分类号: H01L21/336
CPC分类号: H01L29/78603 , H01L27/1292 , H01L29/66757 , H01L29/74
摘要: Methods for forming electronic devices, such as those having a flexible substrate and printed material on the flexible substrate. In one embodiment, the method may include applying materials to a flexible substrate to form the electronic device. At least some of the materials applied to the flexible substrate may be applied using a printing apparatus. The substrate may be annealed when at least some of the materials are present on the flexible substrate. The resulting electronic device may have a high charge carrier mobility in the range from about 10 cm2/V-s to about 100 cm2/V-s.
摘要翻译: 用于形成诸如在柔性基底上具有柔性基底和印刷材料的电子器件的方法。 在一个实施例中,该方法可以包括将材料应用于柔性基板以形成电子设备。 施加到柔性基板上的至少一些材料可以使用印刷装置来施加。 当至少一些材料存在于柔性基底上时,基底可以退火。 所得到的电子器件可以具有在约10cm 2 / V-s至约100cm 2 / V-s范围内的高电荷载流子迁移率。
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公开(公告)号:US20110009255A1
公开(公告)日:2011-01-13
申请号:US11538409
申请日:2006-10-03
IPC分类号: C04B35/565 , C04B35/563
CPC分类号: C04B40/0089 , C04B35/563 , C04B35/6316 , C04B35/65 , C04B2235/3821 , C04B2235/3826 , C04B2235/383 , C04B2235/3834 , C04B2235/422 , C04B2235/424 , C04B2235/425 , C04B2235/428 , C04B2235/48 , C04B2235/5436 , C04B2235/77 , C04B2235/79 , C04B2235/80 , C04B2235/96 , C04B2235/9607
摘要: A reaction bonded ceramic body that has 50% to 60%, by weight, boron carbide, and 20% to 30%, by weight, silicon carbide. The reaction bonded ceramic body has least a portion of the boron carbide reacted with silicon to become siliconized boron carbide. Also, a method of making a reaction bonded ceramic material. The method may include the steps of forming a green body from a mixture of boron carbide, carbon, and an organic binder, and contacting the green body with a liquid infiltrant comprising silicon. The infiltrant has a temperature of about 1625° C. to about 1700° C. Furthermore, a method of making a reaction bonded boron carbide ceramic body. The method includes the steps of forming a green body from a mixture of boron carbide, carbon, and an organic binder. The weight ratio of boron carbide to carbon in the green body may be about 5:5 to 1 or more. The method also includes siliconizing a first portion of the boron carbide to siliconized boron carbide by contacting the green body with a molten silicon infiltrant, where the infiltrant has a temperature of about 1625° C. to about 1700° C. The method may further include dissolving a second portion of the boron carbide in the silicon infiltrant, where at least some of the dissolved boron carbide is reprecipated as smooth particulates.
摘要翻译: 一种反应结合的陶瓷体,其具有50重量%至60重量%的碳化硼和20重量%至30重量%的碳化硅。 反应结合的陶瓷体具有与硅反应的碳化硼的至少一部分成为硅化碳化硼。 另外,制造反应结合陶瓷材料的方法。 该方法可以包括以下步骤:从碳化硼,碳和有机粘合剂的混合物形成生坯,并使生坯与包含硅的液体渗透剂接触。 浸渍剂具有约1625℃至约1700℃的温度。此外,制备反应结合碳化硼陶瓷体的方法。 该方法包括从碳化硼,碳和有机粘合剂的混合物形成生坯体的步骤。 生坯中碳化硼与碳的重量比可以为约5:5至1或更大。 该方法还包括通过使生坯与熔融硅浸润剂接触将碳化硼的第一部分硅化成硅化碳化硼,其中浸渗剂具有约1625℃至约1700℃的温度。该方法还可包括 将第二部分碳化硼溶解在硅浸润剂中,其中至少一些溶解的碳化硼被再沉淀为平滑颗粒。
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