公开(公告)号：US20050230344A1

公开(公告)日：2005-10-20

申请号：US11072139

申请日：2005-03-04

申请人： Frank Koschinsky ,  Volker Kahlert ,  Peter Huebler

发明人： Frank Koschinsky ,  Volker Kahlert ,  Peter Huebler

IPC分类号： H01L21/02 ,  H01L21/283 ,  H01L21/302 ,  H01L21/768

CPC分类号： H01L21/02063 ,  H01L21/76814

摘要： A cleaning process for cleaning the surface of a substrate is disclosed, wherein the surface comprises portions of a dielectric material and portions of a conductive material. According to the method disclosed, the temperature at the surface of the substrate is kept below a predefined value during the actual cleaning step in a reactive and/or inert plasma ambient, such as an argon gas ambient, wherein the predefined value corresponds to the surface temperature at which agglomeration of the conductive material occurs.

摘要翻译： 公开了用于清洁基底表面的清洁方法，其中所述表面包括介电材料的部分和导电材料的部分。 根据所公开的方法，在实际的清洁步骤中，在诸如氩气环境的反应性和/或惰性等离子体环境中，将衬底表面处的温度保持在预定值以下，其中预定值对应于表面 发生导电材料附聚的温度。

公开(公告)号：US07063091B2

公开(公告)日：2006-06-20

申请号：US11072139

申请日：2005-03-04

申请人： Frank Koschinsky ,  Volker Kahlert ,  Peter Huebler

发明人： Frank Koschinsky ,  Volker Kahlert ,  Peter Huebler

IPC分类号： H01L21/302 ,  B08B6/00

CPC分类号： H01L21/02063 ,  H01L21/76814

摘要： A cleaning process for cleaning the surface of a substrate is disclosed, wherein the surface comprises portions of a dielectric material and portions of a conductive material. According to the method disclosed, the temperature at the surface of the substrate is kept below a predefined value during the actual cleaning step in a reactive and/or inert plasma ambient, such as an argon gas ambient, wherein the predefined value corresponds to the surface temperature at which agglomeration of the conductive material occurs.

摘要翻译： 公开了用于清洁基底表面的清洁方法，其中所述表面包括介电材料的部分和导电材料的部分。 根据所公开的方法，在实际的清洁步骤中，在诸如氩气环境的反应性和/或惰性等离子体环境中，将衬底表面处的温度保持在预定值以下，其中预定值对应于表面 发生导电材料附聚的温度。

公开(公告)号：US06716650B2

公开(公告)日：2004-04-06

申请号：US10121122

申请日：2002-04-11

申请人： Eckhard Langer ,  Frank Koschinsky ,  Volker Kahlert ,  Peter Hübler

发明人： Eckhard Langer ,  Frank Koschinsky ,  Volker Kahlert ,  Peter Hübler

IPC分类号： H01L2166

CPC分类号： H01L21/76849 ,  H01L21/76877

摘要： For determining the quality of interconnections in integrated circuits, especially in damascene applications, a method of monitoring voids is disclosed, wherein a barrier metal layer is directly deposited on a planarized metal to provide a large-area surface that is not required to be destroyed for further analysis of the interface between the metal and the barrier metal layer. The analysis may be carried out by employing an electron microscope operated in a back-scatter mode.

摘要翻译： 为了确定集成电路中的互连的质量，特别是在镶嵌应用中，公开了一种监测空隙的方法，其中阻挡金属层直接沉积在平坦化金属上以提供不需要被破坏的大面积表面 进一步分析金属与阻挡金属层之间的界面。 可以通过使用以背散射模式操作的电子显微镜来进行分析。

公开(公告)号：US06613660B2

公开(公告)日：2003-09-02

申请号：US10131699

申请日：2002-04-24

申请人： Volker Kahlert ,  Frank Koschinsky ,  Peter Hübler

发明人： Volker Kahlert ,  Frank Koschinsky ,  Peter Hübler

IPC分类号： H01L2144

CPC分类号： H01L21/76843

摘要： In an in situ damascene metallization process employing a barrier layer between the metal and the dielectric, the generation of voids, especially at the bottom of vias, can be significantly reduced or even completely avoided by maintaining the surface temperature below a critical temperature during deposition of the barrier material.

摘要翻译： 在使用金属和电介质之间的阻挡层的原位金刚石金属化工艺中，特别是在通孔底部的空隙的产生可以通过在沉积期间将表面温度保持在临界温度以下来显着降低甚至完全避免 阻隔材料。

公开(公告)号：US20120061839A1

公开(公告)日：2012-03-15

申请号：US13297860

申请日：2011-11-16

申请人： Volker Kahlert ,  Christof Streck

发明人： Volker Kahlert ,  Christof Streck

IPC分类号： H01L23/532

CPC分类号： H01L21/76849 ,  H01L21/76814 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： During the fabrication of sophisticated metallization systems of semiconductor devices, material deterioration of conductive cap layers may be significantly reduced by providing a noble metal on exposed surface areas after the patterning of the corresponding via openings. Hence, well-established wet chemical etch chemistries may be used while not unduly contributing to process complexity.

摘要翻译： 在制造半导体器件的复杂的金属化系统期间，通过在对应的通路孔的图案化之后在暴露的表面区域上提供贵金属可以显着降低导电盖层的材料劣化。 因此，可以使用公认的湿化学蚀刻化学品，而不会过度地造成工艺复杂性。

公开(公告)号：US08124532B2

公开(公告)日：2012-02-28

申请号：US12497015

申请日：2009-07-02

申请人： Christof Streck ,  Volker Kahlert ,  Alexander Hanke

发明人： Christof Streck ,  Volker Kahlert ,  Alexander Hanke

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L23/53238 ,  H01L21/76802 ,  H01L21/76823 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76883 ,  H01L21/76888 ,  H01L2924/0002 ,  H01L2924/00

摘要： By forming a tin and nickel-containing copper alloy on an exposed copper surface, which is treated to have a copper oxide thereon, a reliable and highly efficient capping layer may be provided. The tin and nickel-containing copper alloy may be formed in a gaseous ambient on the basis of tin hydride and nickel, carbon monoxide in a thermally driven reaction.

摘要翻译： 通过在被暴露的铜表面上形成含有锡和镍的铜合金，其被处理为在其上具有氧化铜，可以提供可靠且高效的覆盖层。 含锡和镍的铜合金可以在气态环境中基于氢化锡和镍，一氧化碳在热驱动反应中形成。

公开(公告)号：US20100025855A1

公开(公告)日：2010-02-04

申请号：US12472824

申请日：2009-05-27

申请人： Christof Streck ,  Volker Kahlert ,  John A. Iacoponi

发明人： Christof Streck ,  Volker Kahlert ,  John A. Iacoponi

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L21/76814 ,  H01L21/76816 ,  H01L21/76831

摘要： During the patterning of sophisticated metallization systems, a damaged surface portion of a sensitive low-k dielectric material may be efficiently replaced by a well-controlled dielectric material, thereby enabling an adaptation of the material characteristics and/or the layer thickness of the replacement material. Thus, established lithography and etch techniques may be used in combination with reduced critical dimensions and dielectric materials of even further reduced permittivity.

摘要翻译： 在复杂的金属化系统的图案化期间，敏感的低k电介质材料的受损表面部分可以被良好控制的电介质材料有效地代替，从而能够改变替代材料的材料特性和/或层厚度 。 因此，所建立的光刻和蚀刻技术可以与降低的介电常数的降低的临界尺寸和电介质材料结合使用。

公开(公告)号：US07442638B2

公开(公告)日：2008-10-28

申请号：US11423900

申请日：2006-06-13

申请人： Kai Frohberg ,  Katja Huy ,  Volker Kahlert

发明人： Kai Frohberg ,  Katja Huy ,  Volker Kahlert

IPC分类号： H01L21/4763

CPC分类号： C23C14/046 ,  H01L21/76843 ,  H01L21/76865

摘要： By performing a re-sputter process during the formation of a barrier layer for a contact opening in a tungsten-based process, the reliability of the tungsten deposition, as well as the performance of the resulting contact plug, may be enhanced. During the re-sputtering process, a thickness of the titanium-based barrier layer may be reduced at the contact bottom, while at the same time the material is re-condensed on critical lower sidewall portions of the contact opening.

摘要翻译： 通过在形成钨基工艺中的接触开口的阻挡层的过程中进行再溅射工艺，可以提高钨沉积的可靠性以及所得到的接触塞的性能。 在再溅射过程中，钛基阻挡层的厚度可以在接触底部减小，同时材料在接触开口的临界下侧壁部分上再凝结。

公开(公告)号：US20080179741A1

公开(公告)日：2008-07-31

申请号：US11948245

申请日：2007-11-30

申请人： Christof Streck ,  Volker Kahlert

发明人： Christof Streck ,  Volker Kahlert

IPC分类号： H01L23/48 ,  C23C16/00

CPC分类号： H01L21/02178 ,  C23C16/303 ,  C23C16/45525 ,  H01L21/0228 ,  H01L21/318 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76867

摘要： By forming an aluminum nitride layer by a self-limiting process sequence, the interface characteristics of a copper-based metallization layer may be significantly enhanced while nevertheless maintaining the overall permittivity of the layer stack at a lower level.

摘要翻译： 通过自限制工艺顺序形成氮化铝层，可以显着提高铜基金属化层的界面特性，同时保持层叠的整体介电常数处于较低水平。

公开(公告)号：US20050093155A1

公开(公告)日：2005-05-05

申请号：US10865199

申请日：2004-06-10

申请人： Volker Kahlert ,  Michael Friedemann

发明人： Volker Kahlert ,  Michael Friedemann

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48

CPC分类号： H01L21/76843 ,  H01L21/76844 ,  H01L21/76865 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： An improved barrier technology for interconnect features, especially for copper-based interconnects, is provided. A thin titanium nitride liner is conformally deposited by chemical vapor deposition so as to reliably cover all inner surfaces of the interconnect features, even if formed within a porous material, and thus provides a surface area having improved wettability for the deposition of a subsequent barrier material. Hence, the step coverage of a sputter deposition technique, typically used for tantalum-based barrier layers, may be successfully used in combination with the titanium nitride liner, thereby improving the wetting properties for the subsequent copper seed deposition compared to a tantalum-based barrier layer formed by ALD. Moreover, the provision of a CVD titanium nitride liner in combination with a sputter deposited barrier layer assures a significantly higher throughput compared to the conventional atomic layer deposition approach.

摘要翻译： 提供了用于互连特征的改进的屏障技术，特别是对于铜基互连。 通过化学气相沉积来共形沉积薄的氮化钛衬垫，以便可靠地覆盖互连特征的所有内表面，即使形成在多孔材料内，并因此提供具有改善的润湿性的沉积后续阻挡材料的表面积 。 因此，通常用于钽基阻挡层的溅射沉积技术的步骤覆盖可以成功地与氮化钛衬垫结合使用，从而与钽基屏障相比改善了随后的铜种子沉积的润湿性能 层由ALD形成。 此外，与常规的原子层沉积方法相比，提供与溅射沉积的阻挡层组合的CVD氮化钛衬垫确保显着更高的通量。