公开(公告)号：US20050007816A1

公开(公告)日：2005-01-13

申请号：US10784514

申请日：2004-02-23

申请人： Kenneth Smith ,  Corbin Champion ,  Stewart Wyatt ,  Frederick Perner

发明人： Kenneth Smith ,  Corbin Champion ,  Stewart Wyatt ,  Frederick Perner

IPC分类号： G11C11/15 ,  G11C11/14

CPC分类号： G11C11/15

摘要： A data storage device comprising a first memory cell string that includes at least a first magnetic random access memory (MRAM) cell coupled to a second MRAM cell and a circuit coupled to a node between the first MRAM cell and the second MRAM cell is provided. The circuit is configured to detect a voltage change at the node in response to a voltage being provided to the memory cell string and in response to a write sense current being applied across the first MRAM cell.

公开(公告)号：US20050007825A1

公开(公告)日：2005-01-13

申请号：US10614505

申请日：2003-07-07

申请人： Richard Hilton ,  Corbin Champion ,  Kenneth Smith ,  Frederick Perner

发明人： Richard Hilton ,  Corbin Champion ,  Kenneth Smith ,  Frederick Perner

IPC分类号： G11C11/15 ,  G11C5/00 ,  G11C7/22 ,  G11C11/00 ,  G11C11/02 ,  G11C11/16 ,  G11C16/04

CPC分类号： G11C11/16

摘要： A method for performing a read operation from a memory cell in a memory cell string is provided. The method includes applying a constant current across the memory cell string, measuring a first voltage across the memory cell string, writing the memory cell to a first state, measuring a second voltage across the memory cell string, and determining whether the first voltage differs from the second voltage.

摘要翻译： 提供了一种用于从存储单元串中的存储单元执行读取操作的方法。 该方法包括在存储单元串中施加恒定电流，测量存储单元串两端的第一电压，将存储单元写入第一状态，测量存储单元串两端的第二电压，以及确定第一电压是否与 第二电压。

公开(公告)号：US20050007823A1

公开(公告)日：2005-01-13

申请号：US10614581

申请日：2003-07-07

申请人： Kenneth Smith ,  Corbin Champion ,  Stewart Wyatt ,  Frederick Perner

发明人： Kenneth Smith ,  Corbin Champion ,  Stewart Wyatt ,  Frederick Perner

IPC分类号： G11C11/15 ,  G11C16/04

CPC分类号： G11C11/15

摘要： A data storage device that includes a memory cell string. The memory cell string includes a first memory cell and a second memory cell. The device also includes a circuit coupled to a node between the first memory cell and a second memory cell. The circuit is configured to detect a voltage change at the node in response to a voltage being provided to the memory cell string and the first memory cell being written to a first state.

摘要翻译： 一种包括存储单元串的数据存储装置。 存储单元串包括第一存储单元和第二存储单元。 该装置还包括耦合到第一存储单元和第二存储单元之间的节点的电路。 电路被配置为响应于提供给存储器单元串并且第一存储器单元被写入第一状态的电压来检测节点处的电压变化。

公开(公告)号：US20050007829A1

公开(公告)日：2005-01-13

申请号：US10614504

申请日：2003-07-07

申请人： Frederick Perner ,  Kenneth Smith ,  Corbin Champion

发明人： Frederick Perner ,  Kenneth Smith ,  Corbin Champion

IPC分类号： G11C11/15 ,  G11C11/14 ,  G11C5/00

CPC分类号： G11C11/14

摘要： A method of performing a read operation from a first memory cell in a memory cell string that includes a first memory cell coupled to a second memory cell. The method includes providing a voltage to a first end of the first memory cell string that is closest to the first memory cell, providing a ground source to a second end of the first memory cell string that is opposite the first end, and determining whether a voltage change occurred at a node between the first and second memory cells in response to writing the first memory cell to a first state.

摘要翻译： 一种从包括耦合到第二存储单元的第一存储单元的存储单元串中的第一存储单元执行读操作的方法。 所述方法包括向最靠近第一存储器单元的第一存储单元串的第一端提供电压，将第一存储单元串的第一端的接地源提供给第一存储单元串的与第一端相对的第二端，以及确定是否 响应于将第一存储器单元写入第一状态，在第一和第二存储器单元之间的节点处发生电压变化。

公开(公告)号：US20060039191A1

公开(公告)日：2006-02-23

申请号：US11252143

申请日：2005-10-17

申请人： Frederick Perner ,  Kenneth Smith ,  Corbin Champion

发明人： Frederick Perner ,  Kenneth Smith ,  Corbin Champion

IPC分类号： G11C11/00

CPC分类号： G11C11/14 ,  G11C11/15 ,  G11C11/16

摘要： A method of performing a read operation from a first magnetic random access memory (AM) cell in a memory cell string that includes the first MRAM cell coupled to a second MRAM cell. The method includes providing a voltage to a first end of the first memory cell string that is closest to the first MRAM cell, providing a ground source to a second end of the first memory cell string that is opposite the first end, and determining whether a voltage change occurred at a node between the first and second MRAM cells in response to applying a write sense current to the first MRAM cell.

摘要翻译： 一种从包括耦合到第二MRAM单元的第一MRAM单元的存储单元串中的第一磁随机存取存储器（AM）单元执行读操作的方法。 该方法包括向最接近第一MRAM单元的第一存储单元串提供电压，向第一存储单元串提供与第一端相对的第二端的接地源，以及确定是否 响应于向第一MRAM单元施加写检测电流，在第一和第二MRAM单元之间的节点处发生电压变化。

公开(公告)号：US20050007833A1

公开(公告)日：2005-01-13

申请号：US10765484

申请日：2004-01-27

申请人： Richard Hilton ,  Corbin Champion ,  Kenneth Smith ,  Frederick Perner

发明人： Richard Hilton ,  Corbin Champion ,  Kenneth Smith ,  Frederick Perner

IPC分类号： G11C11/15 ,  G11C5/00 ,  G11C7/06 ,  G11C7/22 ,  G11C11/00 ,  G11C11/02 ,  G11C11/16 ,  G11C16/04 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

CPC分类号： G11C11/16 ,  G11C7/06

摘要： A method for performing a read operation from a magnetic random access memory (MRAM) cell in a memory cell string is provided. The method includes applying a constant current through the memory cell string, measuring a first voltage across the memory cell string, applying a write sense current across the MRAM cell, measuring a second voltage across the memory cell string, and determining whether the first voltage differs from the second voltage.

公开(公告)号：US20050007830A1

公开(公告)日：2005-01-13

申请号：US10765483

申请日：2004-01-27

申请人： Frederick Perner ,  Kenneth Smith ,  Corbin Champion

发明人： Frederick Perner ,  Kenneth Smith ,  Corbin Champion

IPC分类号： G11C11/15 ,  G11C7/06 ,  G11C11/14 ,  G11C5/00

CPC分类号： G11C11/14 ,  G11C11/15 ,  G11C11/16

摘要： A method of performing a read operation from a first magnetic random access memory (MRAM) cell in a memory cell string that includes the first MRAM cell coupled to a second MRAM cell. The method includes providing a voltage to a first end of the first memory cell string that is closest to the first MRAM cell, providing a ground source to a second end of the first memory cell string that is opposite the first end, and determining whether a voltage change occurred at a node between the first and second MRAM cells in response to applying a write sense current to the first MRAM cell.

摘要翻译： 一种从包括耦合到第二MRAM单元的第一MRAM单元的存储单元串中的第一磁随机存取存储器（MRAM）单元执行读操作的方法。 该方法包括向最接近第一MRAM单元的第一存储单元串提供电压，向第一存储单元串提供与第一端相对的第二端的接地源，以及确定是否 响应于向第一MRAM单元施加写检测电流，在第一和第二MRAM单元之间的节点处发生电压变化。

公开(公告)号：US20050226071A1

公开(公告)日：2005-10-13

申请号：US10817462

申请日：2004-04-02

申请人： John Beers ,  Corbin Champion ,  Kenneth Smith

发明人： John Beers ,  Corbin Champion ,  Kenneth Smith

IPC分类号： G11C11/00 ,  G11C11/15

CPC分类号： G11C11/15

摘要： A storage device includes plural groups of memory cells, wherein the memory cells comprise magnetoresistive elements. Each group includes a transistor, and the memory cells of each group include a first set of parallel connected memory cells that are connected to a node of the transistor. The storage device further includes a sensing device to detect a state of a memory cell in a selected one of the groups.

摘要翻译： 存储装置包括多组存储器单元，其中存储单元包括磁阻元件。 每个组包括晶体管，并且每组的存储单元包括连接到晶体管的节点的第一组并联的存储单元。 存储装置还包括用于检测所选组中的存储单元的状态的感测装置。

公开(公告)号：US20060002193A1

公开(公告)日：2006-01-05

申请号：US11212936

申请日：2005-08-25

申请人： Kenneth Smith ,  Richard Hilton ,  Corbin Champion

发明人： Kenneth Smith ,  Richard Hilton ,  Corbin Champion

IPC分类号： G11C16/04

CPC分类号： G11C29/028 ,  G11C11/14 ,  G11C11/16 ,  G11C29/50 ,  G11C2029/5006

摘要： A method for determining memory element values may include: selecting a column of interest containing a desired memory element, disabling the desired memory element, measuring a first current provided to the column of interest, adjusting measurement circuitry to compensate for skew introduced by undesired memory elements, enabling the desired memory element, and measuring a second current provided to the column of interest.

摘要翻译： 用于确定存储器元件值的方法可以包括：选择包含所需存储器元件的关注列，禁用期望的存储器元件，测量提供给感兴趣列的第一电流，调整测量电路以补偿由不期望的存储元件引入的偏移 ，使能期望的存储元件，以及测量提供给感兴趣的列的第二电流。

公开(公告)号：US20050057974A1

公开(公告)日：2005-03-17

申请号：US10662643

申请日：2003-09-15

申请人： Kenneth Smith ,  Richard Hilton ,  Corbin Champion

发明人： Kenneth Smith ,  Richard Hilton ,  Corbin Champion

IPC分类号： G11C11/15 ,  G11C11/14 ,  G11C29/50 ,  G11C5/00

CPC分类号： G11C29/028 ,  G11C11/14 ,  G11C11/16 ,  G11C29/50 ,  G11C2029/5006

摘要： A method for determining the memory element values is disclosed. In some embodiments the method may include: selecting a column of interest containing a desired memory element, disabling the desired memory element, measuring a first current provided to the column of interest, adjusting measurement circuitry to compensate for skew introduced by undesired memory elements, enabling the desired memory elements, and measuring a second current provided to the column of interest.

摘要翻译： 公开了一种用于确定存储元件值的方法。 在一些实施例中，该方法可以包括：选择包含期望的存储器元件的关注列，禁用期望的存储器元件，测量提供给感兴趣的列的第一电流，调整测量电路以补偿由不期望的存储器元件引入的偏斜，使能 期望的存储元件，以及测量提供给感兴趣的列的第二电流。