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公开(公告)号：US20050007816A1
公开(公告)日：2005-01-13
申请号：US10784514
申请日：2004-02-23
CPC分类号： G11C11/15
摘要： A data storage device comprising a first memory cell string that includes at least a first magnetic random access memory (MRAM) cell coupled to a second MRAM cell and a circuit coupled to a node between the first MRAM cell and the second MRAM cell is provided. The circuit is configured to detect a voltage change at the node in response to a voltage being provided to the memory cell string and in response to a write sense current being applied across the first MRAM cell.
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公开(公告)号：US20050007823A1
公开(公告)日：2005-01-13
申请号：US10614581
申请日：2003-07-07
CPC分类号： G11C11/15
摘要： A data storage device that includes a memory cell string. The memory cell string includes a first memory cell and a second memory cell. The device also includes a circuit coupled to a node between the first memory cell and a second memory cell. The circuit is configured to detect a voltage change at the node in response to a voltage being provided to the memory cell string and the first memory cell being written to a first state.
摘要翻译： 一种包括存储单元串的数据存储装置。 存储单元串包括第一存储单元和第二存储单元。 该装置还包括耦合到第一存储单元和第二存储单元之间的节点的电路。 电路被配置为响应于提供给存储器单元串并且第一存储器单元被写入第一状态的电压来检测节点处的电压变化。
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公开(公告)号：US20050007829A1
公开(公告)日：2005-01-13
申请号：US10614504
申请日：2003-07-07
申请人： Frederick Perner , Kenneth Smith , Corbin Champion
发明人： Frederick Perner , Kenneth Smith , Corbin Champion
CPC分类号： G11C11/14
摘要： A method of performing a read operation from a first memory cell in a memory cell string that includes a first memory cell coupled to a second memory cell. The method includes providing a voltage to a first end of the first memory cell string that is closest to the first memory cell, providing a ground source to a second end of the first memory cell string that is opposite the first end, and determining whether a voltage change occurred at a node between the first and second memory cells in response to writing the first memory cell to a first state.
摘要翻译： 一种从包括耦合到第二存储单元的第一存储单元的存储单元串中的第一存储单元执行读操作的方法。 所述方法包括向最靠近第一存储器单元的第一存储单元串的第一端提供电压，将第一存储单元串的第一端的接地源提供给第一存储单元串的与第一端相对的第二端，以及确定是否 响应于将第一存储器单元写入第一状态，在第一和第二存储器单元之间的节点处发生电压变化。
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公开(公告)号：US20050007825A1
公开(公告)日：2005-01-13
申请号：US10614505
申请日：2003-07-07
CPC分类号： G11C11/16
摘要： A method for performing a read operation from a memory cell in a memory cell string is provided. The method includes applying a constant current across the memory cell string, measuring a first voltage across the memory cell string, writing the memory cell to a first state, measuring a second voltage across the memory cell string, and determining whether the first voltage differs from the second voltage.
摘要翻译： 提供了一种用于从存储单元串中的存储单元执行读取操作的方法。 该方法包括在存储单元串中施加恒定电流，测量存储单元串两端的第一电压，将存储单元写入第一状态，测量存储单元串两端的第二电压，以及确定第一电压是否与 第二电压。
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公开(公告)号：US20060039191A1
公开(公告)日：2006-02-23
申请号：US11252143
申请日：2005-10-17
申请人： Frederick Perner , Kenneth Smith , Corbin Champion
发明人： Frederick Perner , Kenneth Smith , Corbin Champion
IPC分类号： G11C11/00
摘要： A method of performing a read operation from a first magnetic random access memory (AM) cell in a memory cell string that includes the first MRAM cell coupled to a second MRAM cell. The method includes providing a voltage to a first end of the first memory cell string that is closest to the first MRAM cell, providing a ground source to a second end of the first memory cell string that is opposite the first end, and determining whether a voltage change occurred at a node between the first and second MRAM cells in response to applying a write sense current to the first MRAM cell.
摘要翻译： 一种从包括耦合到第二MRAM单元的第一MRAM单元的存储单元串中的第一磁随机存取存储器（AM）单元执行读操作的方法。 该方法包括向最接近第一MRAM单元的第一存储单元串提供电压，向第一存储单元串提供与第一端相对的第二端的接地源，以及确定是否 响应于向第一MRAM单元施加写检测电流，在第一和第二MRAM单元之间的节点处发生电压变化。
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公开(公告)号：US20050007833A1
公开(公告)日：2005-01-13
申请号：US10765484
申请日：2004-01-27
IPC分类号： G11C11/15 , G11C5/00 , G11C7/06 , G11C7/22 , G11C11/00 , G11C11/02 , G11C11/16 , G11C16/04 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： A method for performing a read operation from a magnetic random access memory (MRAM) cell in a memory cell string is provided. The method includes applying a constant current through the memory cell string, measuring a first voltage across the memory cell string, applying a write sense current across the MRAM cell, measuring a second voltage across the memory cell string, and determining whether the first voltage differs from the second voltage.
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公开(公告)号：US20050007830A1
公开(公告)日：2005-01-13
申请号：US10765483
申请日：2004-01-27
申请人： Frederick Perner , Kenneth Smith , Corbin Champion
发明人： Frederick Perner , Kenneth Smith , Corbin Champion
摘要： A method of performing a read operation from a first magnetic random access memory (MRAM) cell in a memory cell string that includes the first MRAM cell coupled to a second MRAM cell. The method includes providing a voltage to a first end of the first memory cell string that is closest to the first MRAM cell, providing a ground source to a second end of the first memory cell string that is opposite the first end, and determining whether a voltage change occurred at a node between the first and second MRAM cells in response to applying a write sense current to the first MRAM cell.
摘要翻译： 一种从包括耦合到第二MRAM单元的第一MRAM单元的存储单元串中的第一磁随机存取存储器（MRAM）单元执行读操作的方法。 该方法包括向最接近第一MRAM单元的第一存储单元串提供电压，向第一存储单元串提供与第一端相对的第二端的接地源，以及确定是否 响应于向第一MRAM单元施加写检测电流，在第一和第二MRAM单元之间的节点处发生电压变化。
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公开(公告)号：US20050122767A1
公开(公告)日：2005-06-09
申请号：US10727273
申请日：2003-12-03
申请人： Frederick Perner , Jonathan Jedwab , James Davis , David McIntyre , David Banks , Stewart Wyatt , Kenneth Smith
发明人： Frederick Perner , Jonathan Jedwab , James Davis , David McIntyre , David Banks , Stewart Wyatt , Kenneth Smith
IPC分类号： G11C7/04 , G11C11/00 , G11C11/02 , G11C11/15 , G11C29/00 , G11C29/02 , G11C29/04 , G11C29/44 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11C11/16 , G11C29/02 , G11C29/026 , G11C29/028
摘要： Embodiments of the present invention provide a magnetic memory. In one embodiment, the magnetic memory comprises an array of memory cells configured to provide resistive states, and a read circuit. The read circuit is configured to sense a resistance through a memory cell in the array of memory cells to obtain a sense result and categorize the sense result into one of at least three different categories comprising a middle category situated between the resistive states.
摘要翻译： 本发明的实施例提供一种磁存储器。 在一个实施例中，磁存储器包括被配置为提供电阻状态的存储器单元的阵列和读取电路。 读取电路被配置为感测通过存储器单元阵列中的存储器单元的电阻以获得感测结果，并将感测结果分类为包括位于电阻状态之间的中间类别的至少三个不同类别中的一个。
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公开(公告)号：US20050047201A1
公开(公告)日：2005-03-03
申请号：US10649752
申请日：2003-08-27
申请人： Frederick Perner , Kenneth Smith
发明人： Frederick Perner , Kenneth Smith
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/00
CPC分类号： G11C11/15
摘要： Methods and apparatuses are disclosed for reducing the read time of a memory array. In one embodiment, the method includes: sampling unknown data values from a plurality of memory elements, buffering the unknown values, writing known values to the plurality of memory elements and sampling the known values, and comparing the known values to the buffered values.
摘要翻译： 公开了用于减少存储器阵列的读取时间的方法和装置。 在一个实施例中，该方法包括：从多个存储器元件中采样未知数据值，缓冲未知值，将已知值写入多个存储器元件并对已知值进行采样，以及将已知值与缓冲值进行比较。
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公开(公告)号：US20050047199A1
公开(公告)日：2005-03-03
申请号：US10649076
申请日：2003-08-27
申请人： Frederick Perner , Kenneth Smith , Thomas Anthony
发明人： Frederick Perner , Kenneth Smith , Thomas Anthony
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/00
CPC分类号： G11C11/15
摘要： Method and apparatus for coupling conductors in magnetic memory. In some embodiments, the memory element comprises: a first magnetic memory element, a first group of conductors magnetically coupled to the first magnetic memory element, a second magnetic memory element, a second group of conductors magnetically coupled to the second magnetic memory element, where the second magnetic memory element is substantially vertical to the first, and the first and second group of conductors have at least one conductor in common.
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