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1.发明授权
公开(公告)号：US06064074A
公开(公告)日：2000-05-16
申请号：US46035
申请日：1998-03-23
IPC分类号： H01J1/30 , H01J1/308 , H01J29/04 , H01L29/866 , H01L29/06
摘要： Semiconductor device with a semiconductor cathode having an emissive part (pn junction) separated from a contact part which has locations at which a controlled breakdown occurs on a contact part metallization at excessive voltages, so that, during manufacture and operation, the emissive part in an election tube is protected from damage.
摘要翻译： 具有半导体阴极的半导体器件具有与接触部分分离的发射部分（pn结），所述接触部分具有在过电压下在接触部分金属化处发生受控击穿的位置，使得在制造和操作期间，发射部分在 选管保护免受损坏。
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公开(公告)号：US06236154B1
公开(公告)日：2001-05-22
申请号：US09261985
申请日：1999-03-04
申请人： Ron Kroon , Tom Van Zutphen , Frederik C Gehring
发明人： Ron Kroon , Tom Van Zutphen , Frederik C Gehring
IPC分类号： H01J2900
CPC分类号： H01J9/02 , H01J9/44 , H01J29/04 , H01J2201/308
摘要： In an electron tube based on a cold cathode, a cesium source (17) containing Csx—Auy or Csx—Sby is provided near the cold cathode (7), preferably in contact with the first grid (9). Cesium is introduced into the source during activation of the tube. The vapor pressure of the cesium compounds is such that proper delivery of cesium is guaranteed throughout the life-time of the cathode.
摘要翻译： 在基于冷阴极的电子管中，在冷阴极（7）附近设置含有Csx-Auy或Csx-Sby的铯源（17），优选与第一栅极（9）接触。 在管的激活期间将铯引入源中。 铯化合物的蒸气压使得在阴极的整个使用寿命期间保证适当的铯输送。
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公开(公告)号：US06552485B2
公开(公告)日：2003-04-22
申请号：US09338047
申请日：1999-06-22
申请人： Frederik C. Gehring , Ron Kroon , Tom Van Zutphen
发明人： Frederik C. Gehring , Ron Kroon , Tom Van Zutphen
IPC分类号： H01J2946
摘要： An electron tube provided with a semiconductor cathode for emitting electrons, which semiconductor cathode is arranged on a support, a source being arranged in the vicinity of the cathode, in particular, so as to face the free (Si) surface of the cathode, which source is capable of evolving, at the increased temperatures occurring during evacuation of the tube in the manufacturing process, a reducing agent such as F2 or HF, which passivates the free (Si) surface of the cathode.
摘要翻译： 具有用于发射电子的半导体阴极的电子管，该半导体阴极被布置在支撑体上，源极被布置在阴极附近，特别是面向阴极的自由（Si）表面， 源能够在制造过程中在管排空过程中发生的升高的温度下进行，即还原剂如F2或HF，其钝化阴极的游离（Si）表面。
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4.发明授权Electron-optical device having separate elongate electron-emitting regions 失效电子 - 光学器件具有单独的细长电子发射区域
公开(公告)号：US5864201A
公开(公告)日：1999-01-26
申请号：US709403
申请日：1996-09-04
CPC分类号： H01J29/488 , H01J3/029 , H01J2201/308
摘要： Electron-optical device having two elongate emitting regions arranged symmetrically with respect to a longitudinal axis for producing two electron beams having an elongate cross-section. By means of electron grids, the two beams are focused at the same point of an electron target arranged transversely to the longitudinal axis and having a short central axis and a long central axis. The elongate emitting regions have their smallest cross-section parallel to the scanning direction of a device, cooperating with the electron-optical device, for scanning a target arranged transversely to the longitudinal axis.
摘要翻译： 电子 - 光学器件具有相对于纵向轴线对称布置的两个细长的发射区域，用于产生具有细长横截面的两个电子束。 通过电子栅格，两个光束聚焦在横向于纵向轴线布置的具有短的中心轴和长的中心轴的电子靶的相同点上。 细长发射区域具有平行于装置的扫描方向的最小横截面，与电子 - 光学装置配合，用于扫描横向于纵向轴线布置的靶。
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公开(公告)号：US5831380A
公开(公告)日：1998-11-03
申请号：US709405
申请日：1996-09-04
IPC分类号： H01J3/02 , H01J1/30 , H01J1/308 , H01J1/46 , H01J3/40 , H01J29/04 , H01J29/48 , H01J29/50 , H01J29/84 , H01J29/20 , H01J29/70
CPC分类号： H01J29/488 , H01J29/04 , H01J2201/308
摘要： An electron has an electron-emitting region, a longitudinal axis and an arrangement of apertured electron grids along the axis. A first grid has an aperture for passing electrons, which aperture is located further outwards with respect to the longitudinal axis than the emitting region. One of the other grids is provided with a shield so as to shield the edge wall of the aperture, if it is located within direct view of the electron-emitting region, from incidence of positive ions.
摘要翻译： 电子具有电子发射区域，纵向轴线和沿轴线的多孔电子栅极的布置。 第一栅格具有用于通过电子的孔，该孔比发射区相对于纵轴更向外定位。 其他栅格中的一个设置有屏蔽件，以便如果它位于电子发射区域的直视图内，则遮挡孔的边缘壁不会发生阳离子的入射。
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6.发明授权Cathode ray tube with a getter coating in the vicinity of a semiconductor cathode 失效在半导体阴极附近具有吸气剂涂层的阴极射线管公开(公告)号：US06262527B1
公开(公告)日：2001-07-17
申请号：US09153776
申请日：1998-09-15
IPC分类号： H01J3100
CPC分类号： H01J29/94 , H01J29/04 , H01J29/485 , H01J2201/308
摘要： Cathode ray tube comprising an electron gun which is constructed in such a way that the gas pressure near the electron-emissive layer (30) of the cathode is lower than in the other parts of the tube. This can be achieved by reducing the aperture between the G1 (33) and G2 (36), by providing the G2 (36) with a skirt (43). The wall of the skirt, the G1 and the G2 may also be at least partly coated with a getter (41).
摘要翻译： 阴极射线管包括电子枪，其构造为使阴极的电子发射层（30）附近的气体压力低于管的其它部分中的气体压力。 这可以通过使G2（36）具有裙部（43）来减小G1（33）和G2（36）之间的孔径来实现。 裙部的壁，G1和G2也可以至少部分地涂覆有吸气剂（41）。
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7.发明授权Electron tube having a semiconductor cathode with lower and higher bandgap layers 失效电子管具有具有较低和较高带隙层的半导体阴极
公开(公告)号：US5880481A
公开(公告)日：1999-03-09
申请号：US22450
申请日：1998-02-12
申请人： Ron Kroon , Tom Van Zutphen , Erwin Hijzen
发明人： Ron Kroon , Tom Van Zutphen , Erwin Hijzen
摘要： A semiconductor cathode (11) in a semiconductor structure, in which the sturdiness of the cathode is increased by covering the emitting surface (4) with a layer of a semiconductor material (7) having a larger bandgap than the semiconductor material of the semiconductor cathode. Various measures for increasing the electron-emission efficiency are indicated.
摘要翻译： 一种半导体结构中的半导体阴极（11），其中通过用具有比半导体阴极的半导体材料更大的带隙的半导体材料（7）覆盖发光表面（4）来增加阴极的坚固性 。 指出了提高电子发射效率的各种措施。
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8.发明授权Electron tube having a semiconductor cathode with lower and higher bandgap layers 失效电子管具有具有较低和较高带隙层的半导体阴极公开(公告)号：US06198210B1
公开(公告)日：2001-03-06
申请号：US09198927
申请日：1998-11-24
申请人： Ron Kroon , Tom Van Zutphen , Erwin A. Hijzen
发明人： Ron Kroon , Tom Van Zutphen , Erwin A. Hijzen
IPC分类号： H01J2900
摘要： A semiconductor cathode (11) in a semiconductor structure, in which the sturdiness of the cathode is increased by covering the emitting surface (4) with a layer of a semiconductor material (7) having a larger bandgap than the semiconductor material of the semiconductor cathode. Various measures for increasing the electron-mission efficiency are indicated.
摘要翻译： 一种半导体结构中的半导体阴极（11），其中通过用具有比半导体阴极的半导体材料更大的带隙的半导体材料（7）覆盖发光表面（4）来增加阴极的坚固性 。 指出了增加电子任务效率的各种措施。
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公开(公告)号：US06310434B1
公开(公告)日：2001-10-30
申请号：US09103457
申请日：1998-06-24
申请人： Tom Van Zutphen , Jacobus Stoffels
发明人： Tom Van Zutphen , Jacobus Stoffels
IPC分类号： H01J2904
摘要： A picture display device having a cathode which includes two electric current conductors between which a video signal is applied, for applying a video signal to the cathode to modulate an electron beam emitted from the cathode. To increase the feasible modulation frequency, the inductance of the two electric conductors is reduced by holding one part of the length of the conductors closer together than their spacing over another part of the same length.
摘要翻译： 一种具有阴极的图像显示装置，其具有施加有视频信号的两个电流导体，用于向阴极施加视频信号以调制从阴极发射的电子束。 为了增加可行的调制频率，通过将导体长度的一部分保持在一起的距离比在相同长度的另一部分上的间距更小，可以减小两个电导体的电感。
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公开(公告)号：US5604355A
公开(公告)日：1997-02-18
申请号：US442565
申请日：1995-05-16
申请人： Tom Van Zutphen
发明人： Tom Van Zutphen
摘要： By providing a semiconductor device such as a cold cathode (7) with extra zener or avalanche structures (26, 27 and 32, 33, respectively) a robust structure is obtained which is resistant to damage during manufacture and use of a vacuum tube. The semiconductor zones (26, 27, 32, 33) are thus also utilized for realizing electron optics (particle optics).
摘要翻译： 通过提供具有额外的齐纳或雪崩结构（分别为26,27和32,33）的冷阴极（7）的半导体器件，获得了坚固的结构，其在真空管的制造和使用期间耐受损坏。 因此，半导体区域（26,27,32,33）也用于实现电子光学（粒子光学）。
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