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    Electron-optical device having separate elongate electron-emitting regions
    1.
    发明授权
    Electron-optical device having separate elongate electron-emitting regions 失效
    电子 - 光学器件具有单独的细长电子发射区域

    公开(公告)号：US5864201A

    公开(公告)日：1999-01-26

    申请号：US709403

    申请日：1996-09-04

    Applicant: Frederik C. Gehring ,  Tom Van Zutphen ,  Albert Manenschijn

    Inventor： Frederik C. Gehring ,  Tom Van Zutphen ,  Albert Manenschijn

    IPC: H01J29/04 ,  H01J3/02 ,  H01J29/46 ,  H01J29/48 ,  H01J29/50

    CPC classification number: H01J29/488 ,  H01J3/029 ,  H01J2201/308

    Abstract: Electron-optical device having two elongate emitting regions arranged symmetrically with respect to a longitudinal axis for producing two electron beams having an elongate cross-section. By means of electron grids, the two beams are focused at the same point of an electron target arranged transversely to the longitudinal axis and having a short central axis and a long central axis. The elongate emitting regions have their smallest cross-section parallel to the scanning direction of a device, cooperating with the electron-optical device, for scanning a target arranged transversely to the longitudinal axis.

    Abstract translation: 电子 - 光学器件具有相对于纵向轴线对称布置的两个细长的发射区域，用于产生具有细长横截面的两个电子束。 通过电子栅格，两个光束聚焦在横向于纵向轴线布置的具有短的中心轴和长的中心轴的电子靶的相同点上。 细长发射区域具有平行于装置的扫描方向的最小横截面，与电子 - 光学装置配合，用于扫描横向于纵向轴线布置的靶。

    Electron-optical device
    2.
    发明授权
    Electron-optical device 失效
    电子光学器件

    公开(公告)号：US5831380A

    公开(公告)日：1998-11-03

    申请号：US709405

    申请日：1996-09-04

    Applicant: Tom Van Zutphen ,  Frederik C. Gehring

    Inventor： Tom Van Zutphen ,  Frederik C. Gehring

    IPC: H01J3/02 ,  H01J1/30 ,  H01J1/308 ,  H01J1/46 ,  H01J3/40 ,  H01J29/04 ,  H01J29/48 ,  H01J29/50 ,  H01J29/84 ,  H01J29/20 ,  H01J29/70

    CPC classification number: H01J29/488 ,  H01J29/04 ,  H01J2201/308

    Abstract: An electron has an electron-emitting region, a longitudinal axis and an arrangement of apertured electron grids along the axis. A first grid has an aperture for passing electrons, which aperture is located further outwards with respect to the longitudinal axis than the emitting region. One of the other grids is provided with a shield so as to shield the edge wall of the aperture, if it is located within direct view of the electron-emitting region, from incidence of positive ions.

    Abstract translation: 电子具有电子发射区域，纵向轴线和沿轴线的多孔电子栅极的布置。 第一栅格具有用于通过电子的孔，该孔比发射区相对于纵轴更向外定位。 其他栅格中的一个设置有屏蔽件，以便如果它位于电子发射区域的直视图内，则遮挡孔的边缘壁不会发生阳离子的入射。

    Electron tube comprising a semiconductor cathode
    3.
    发明授权
    Electron tube comprising a semiconductor cathode 失效
    包括半导体阴极的电子管

    公开(公告)号：US06552485B2

    公开(公告)日：2003-04-22

    申请号：US09338047

    申请日：1999-06-22

    Applicant: Frederik C. Gehring ,  Ron Kroon ,  Tom Van Zutphen

    Inventor： Frederik C. Gehring ,  Ron Kroon ,  Tom Van Zutphen

    IPC: H01J2946

    CPC classification number: H01J29/04 ,  H01J1/308

    Abstract: An electron tube provided with a semiconductor cathode for emitting electrons, which semiconductor cathode is arranged on a support, a source being arranged in the vicinity of the cathode, in particular, so as to face the free (Si) surface of the cathode, which source is capable of evolving, at the increased temperatures occurring during evacuation of the tube in the manufacturing process, a reducing agent such as F2 or HF, which passivates the free (Si) surface of the cathode.

    Abstract translation: 具有用于发射电子的半导体阴极的电子管，该半导体阴极被布置在支撑体上，源极被布置在阴极附近，特别是面向阴极的自由（Si）表面， 源能够在制造过程中在管排空过程中发生的升高的温度下进行，即还原剂如F2或HF，其钝化阴极的游离（Si）表面。

    Cathode ray tube with a getter coating in the vicinity of a semiconductor cathode
    5.
    发明授权
    Cathode ray tube with a getter coating in the vicinity of a semiconductor cathode 失效
    在半导体阴极附近具有吸气剂涂层的阴极射线管

    公开(公告)号：US06262527B1

    公开(公告)日：2001-07-17

    申请号：US09153776

    申请日：1998-09-15

    Applicant: Tom Van Zutphen ,  Frederik C. Gehring

    Inventor： Tom Van Zutphen ,  Frederik C. Gehring

    IPC: H01J3100

    CPC classification number: H01J29/94 ,  H01J29/04 ,  H01J29/485 ,  H01J2201/308

    Abstract: Cathode ray tube comprising an electron gun which is constructed in such a way that the gas pressure near the electron-emissive layer (30) of the cathode is lower than in the other parts of the tube. This can be achieved by reducing the aperture between the G1 (33) and G2 (36), by providing the G2 (36) with a skirt (43). The wall of the skirt, the G1 and the G2 may also be at least partly coated with a getter (41).

    Abstract translation: 阴极射线管包括电子枪，其构造为使阴极的电子发射层（30）附近的气体压力低于管的其它部分中的气体压力。 这可以通过使G2（36）具有裙部（43）来减小G1（33）和G2（36）之间的孔径来实现。 裙部的壁，G1和G2也可以至少部分地涂覆有吸气剂（41）。

    Electron tube with a cesium source
    7.
    发明授权
    Electron tube with a cesium source 失效
    带铯源的电子管

    公开(公告)号：US06236154B1

    公开(公告)日：2001-05-22

    申请号：US09261985

    申请日：1999-03-04

    Applicant: Ron Kroon ,  Tom Van Zutphen ,  Frederik C Gehring

    Inventor： Ron Kroon ,  Tom Van Zutphen ,  Frederik C Gehring

    IPC: H01J2900

    CPC classification number: H01J9/02 ,  H01J9/44 ,  H01J29/04 ,  H01J2201/308

    Abstract: In an electron tube based on a cold cathode, a cesium source (17) containing Csx—Auy or Csx—Sby is provided near the cold cathode (7), preferably in contact with the first grid (9). Cesium is introduced into the source during activation of the tube. The vapor pressure of the cesium compounds is such that proper delivery of cesium is guaranteed throughout the life-time of the cathode.

    Abstract translation: 在基于冷阴极的电子管中，在冷阴极（7）附近设置含有Csx-Auy或Csx-Sby的铯源（17），优选与第一栅极（9）接触。 在管的激活期间将铯引入源中。 铯化合物的蒸气压使得在阴极的整个使用寿命期间保证适当的铯输送。

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