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公开(公告)号：US4456998A
公开(公告)日：1984-06-26
申请号：US266610
申请日：1981-05-22
CPC分类号： H01S5/2231
摘要： A semiconductor laser, which comprises a substrate of InP, an active layer, and two clad layers holding therebetween the active layer, and which is constructed so that the refractive index of the active layer may be larger than the refractive indexes of the two clad layers. In one of the two clad layers, the refractive index of a region adjacent to a radiation region in the active layer is larger than the refractive index of a region adjacent to a non-radiation region in the active layer. The refractive index of the other clad layer is equal to the refractive index of that region of said on clad layer adjoining the radiation region or the non-radiation region. The thickness and width of the radiation region of the active layer are selected so that the semiconductor laser may oscillate in the fundamental transverse mode. A buffer layer may be further provided between the active layer and one of the two clad layers.
摘要翻译： 一种半导体激光器，其包括InP的衬底，有源层和保持在其间的有源层的两个覆盖层，并且被构造成使得有源层的折射率可以大于两个覆盖层的折射率 。 在两个包覆层中的一个中，与有源层中的辐射区相邻的区域的折射率大于与有源层中的非辐射区域相邻的区域的折射率。 另一个包覆层的折射率等于与辐射区域或非辐射区域相邻的所述上包层的区域的折射率。 选择有源层的辐射区域的厚度和宽度，使得半导体激光器可以在基本横向模式下振荡。 可以在活性层和两个包覆层中的一个之间进一步设置缓冲层。
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公开(公告)号：US20090051924A1
公开(公告)日：2009-02-26
申请号：US12185888
申请日：2008-08-05
申请人： Masafumi ITO , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii , Tomohiro Suzuki , Chishio Koshimizu
发明人： Masafumi ITO , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii , Tomohiro Suzuki , Chishio Koshimizu
IPC分类号： G01B11/06
CPC分类号： G01J5/0003 , G01K11/12
摘要： An apparatus for measuring thickness is provided. A light source irradiates a front surface or a rear surface of a substrate with a light. A splitter splits the light into a reference light and a measurement light. The reference light is reflected by a reference light reflecting device. An optical path changing device changes an optical path length of light reflected from the reference light reflecting device. A light receiving device measures an interference of the reflected light from the substrate and the reference light from the reference light reflecting device. A thickness of at least one of the front surface, rear surface or inside of the substrate is measured based on a measurement of the interference.
摘要翻译： 提供了一种测量厚度的装置。 光源用光照射基板的前表面或后表面。 分流器将光分成参考光和测量光。 参考光被参考光反射装置反射。 光路改变装置改变从参考光反射装置反射的光的光路长度。 光接收装置测量来自基板的反射光和来自参考光反射装置的基准光的干涉。 基于干涉的测量来测量衬底的前表面，后表面或内部中的至少一个的厚度。
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公开(公告)号：US20050271116A1
公开(公告)日：2005-12-08
申请号：US11196402
申请日：2005-08-04
申请人： Masafumi Ito , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii , Tomohiro Suzuki , Chishio Koshimizu
发明人： Masafumi Ito , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii , Tomohiro Suzuki , Chishio Koshimizu
IPC分类号： G01J5/00 , G01K11/12 , H01L21/324 , G01K1/16
CPC分类号： G01J5/0003 , G01K11/12
摘要： The temperature of the surface and/or inside of a substrate is measured by irradiating the front surface or rear surface of the substrate, whose temperature is to be measured, with light and measuring the interference of a reflected light from the substrate and a reference light. A method and apparatus for measuring temperature or thickness which is suitable for directly measuring the temperature of the outermost surface layer of a substrate, and an apparatus for treating a substrate for an electronic device, which uses such method, are provided.
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公开(公告)号：US07416330B2
公开(公告)日：2008-08-26
申请号：US11196402
申请日：2005-08-04
申请人： Masafumi Ito , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii , Tomohiro Suzuki , Chishio Koshimizu
发明人： Masafumi Ito , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii , Tomohiro Suzuki , Chishio Koshimizu
CPC分类号： G01J5/0003 , G01K11/12
摘要： The temperature of the surface and/or inside of a substrate is measured by irradiating the front surface or rear surface of the substrate, whose temperature is to be measured, with light and measuring the interference of a reflected light from the substrate and a reference light. A method and apparatus for measuring temperature or thickness which is suitable for directly measuring the temperature of the outermost surface layer of a substrate, and an apparatus for treating a substrate for an electronic device, which uses such method, are provided.
摘要翻译： 基板的表面和/或内部的温度通过用光照射待测温度的基板的前表面或后表面并测量来自基板的反射光的干涉和参考光来测量 。 提供了一种用于测量温度或厚度的方法和装置，其适用于直接测量基板的最外表面层的温度，以及使用这种方法的用于处理电子设备的基板的设备。
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公开(公告)号：US4367200A
公开(公告)日：1983-01-04
申请号：US227682
申请日：1981-01-23
CPC分类号： C30B15/08 , Y10S117/91 , Y10T117/102 , Y10T117/1036 , Y10T117/1044
摘要： A single crystal manufacturing device, in which there are provided a crucible having a melting part for holding a molten liquid of a raw material and a nozzle part for continuously taking out a predetermined amount of the molten liquid by the action of gravity; a heater for heating the raw material to melt it in the melting part; and temperature control means for heating the nozzle part to take out the molten liquid of the raw material from the nozzle part and for providing as large a thermal gradient as possible in the solid-liquid interface between the molten liquid taken out from the nozzle part and a grown single crystal continuous to the molten liquid.The crucible can be double-structured. A guide pipe filled with fibrous material may be provided between the nozzle and the rollers of the grown single crystal.
摘要翻译： 一种单晶体制造装置，其中设置有具有用于保持原料的熔融液体的熔融部分和用于通过重力的作用连续取出预定量的熔融液体的喷嘴部分的坩埚; 用于加热原料以在熔化部分熔化的加热器; 以及温度控制装置，用于加热喷嘴部分以从喷嘴部分取出原料的熔融液体，并且在从喷嘴部分取出的熔融液体与从喷嘴部分取出的熔融液体之间的固 - 液界面中提供尽可能大的热梯度， 与熔融液体连续生长的单晶。 坩埚可以是双重结构的。 填充有纤维材料的引导管可以设置在喷嘴和生长的单晶的辊之间。
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公开(公告)号：US20080204324A1
公开(公告)日：2008-08-28
申请号：US11572697
申请日：2005-07-25
CPC分类号： H01Q9/0471 , Y10T29/49016
摘要： In the present invention, a patch antenna wherein electric waves in two frequency bands can be transmitted and received is provided with smaller dimensions and a lower cost than in the conventional arts. The patch antenna has a radiation electrode and a ground conductor disposed to oppose each other, and has dielectrics in the gap between the radiation electrode and the ground conductor. The radiation electrode and the ground conductor are made of a material being excellent in electric conductivity. The radiation electrode is rectangular in a plan view. A power supplying part is disposed at a position having substantially the same distance from the opposing two sides of the radiation electrode. The thickness of the dielectrics differs with a boundary located at the position of distance a from one terminal side of the radiation electrode in the longer-side direction of the radiation electrode.
摘要翻译： 在本发明中，与现有技术相比，能够发送接收两个频带的电波的贴片天线具有较小的尺寸和较低的成本。 贴片天线具有彼此相对设置的放射电极和接地导体，并且在辐射电极和接地导体之间的间隙中具有电介质。 辐射电极和接地导体由导电性优异的材料制成。 辐射电极在平面图中是矩形的。 供电部设置在与放射电极的相对的两侧具有大致相同距离的位置。 电介质的厚度与放射电极的长边方向的距辐射电极的一个端子侧的距离a的位置的边界不同。
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公开(公告)号：US20050259716A1
公开(公告)日：2005-11-24
申请号：US10964647
申请日：2004-10-15
申请人： Masafumi Ito , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii
发明人： Masafumi Ito , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii
IPC分类号： G01J5/00 , G01K11/12 , H01L21/324 , G01K11/00 , G01K1/16
CPC分类号： G01J5/0003 , G01K11/12
摘要： The temperature of the surface and/or inside of a substrate is measured by irradiating the front surface or rear surface of the substrate, whose temperature is to be measured, with light and measuring the interference of a reflected light from the substrate and a reference light. A method and apparatus for measuring temperature or thickness which is suitable for directly measuring the temperature of the outermost surface layer of a substrate, and an apparatus for treating a substrate for an electronic device, which uses such method, are provided.
摘要翻译： 基板的表面和/或内部的温度通过用光照射待测温度的基板的前表面或后表面并测量来自基板的反射光的干涉和参考光来测量 。 提供了一种用于测量温度或厚度的方法和装置，其适用于直接测量基板的最外表面层的温度，以及使用这种方法的用于处理电子设备的基板的设备。
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