公开(公告)号：US07416330B2

公开(公告)日：2008-08-26

申请号：US11196402

申请日：2005-08-04

申请人： Masafumi Ito ,  Yasuyuki Okamura ,  Tatsuo Shiina ,  Nobuo Ishii ,  Tomohiro Suzuki ,  Chishio Koshimizu

发明人： Masafumi Ito ,  Yasuyuki Okamura ,  Tatsuo Shiina ,  Nobuo Ishii ,  Tomohiro Suzuki ,  Chishio Koshimizu

IPC分类号： G01J5/08 ,  G01N25/00

CPC分类号： G01J5/0003 ,  G01K11/12

摘要： The temperature of the surface and/or inside of a substrate is measured by irradiating the front surface or rear surface of the substrate, whose temperature is to be measured, with light and measuring the interference of a reflected light from the substrate and a reference light. A method and apparatus for measuring temperature or thickness which is suitable for directly measuring the temperature of the outermost surface layer of a substrate, and an apparatus for treating a substrate for an electronic device, which uses such method, are provided.

摘要翻译： 基板的表面和/或内部的温度通过用光照射待测温度的基板的前表面或后表面并测量来自基板的反射光的干涉和参考光来测量 。 提供了一种用于测量温度或厚度的方法和装置，其适用于直接测量基板的最外表面层的温度，以及使用这种方法的用于处理电子设备的基板的设备。

公开(公告)号：US20090051924A1

公开(公告)日：2009-02-26

申请号：US12185888

申请日：2008-08-05

申请人： Masafumi ITO ,  Yasuyuki Okamura ,  Tatsuo Shiina ,  Nobuo Ishii ,  Tomohiro Suzuki ,  Chishio Koshimizu

发明人： Masafumi ITO ,  Yasuyuki Okamura ,  Tatsuo Shiina ,  Nobuo Ishii ,  Tomohiro Suzuki ,  Chishio Koshimizu

IPC分类号： G01B11/06

CPC分类号： G01J5/0003 ,  G01K11/12

摘要： An apparatus for measuring thickness is provided. A light source irradiates a front surface or a rear surface of a substrate with a light. A splitter splits the light into a reference light and a measurement light. The reference light is reflected by a reference light reflecting device. An optical path changing device changes an optical path length of light reflected from the reference light reflecting device. A light receiving device measures an interference of the reflected light from the substrate and the reference light from the reference light reflecting device. A thickness of at least one of the front surface, rear surface or inside of the substrate is measured based on a measurement of the interference.

摘要翻译： 提供了一种测量厚度的装置。 光源用光照射基板的前表面或后表面。 分流器将光分成参考光和测量光。 参考光被参考光反射装置反射。 光路改变装置改变从参考光反射装置反射的光的光路长度。 光接收装置测量来自基板的反射光和来自参考光反射装置的基准光的干涉。 基于干涉的测量来测量衬底的前表面，后表面或内部中的至少一个的厚度。

公开(公告)号：US20050271116A1

公开(公告)日：2005-12-08

申请号：US11196402

申请日：2005-08-04

申请人： Masafumi Ito ,  Yasuyuki Okamura ,  Tatsuo Shiina ,  Nobuo Ishii ,  Tomohiro Suzuki ,  Chishio Koshimizu

发明人： Masafumi Ito ,  Yasuyuki Okamura ,  Tatsuo Shiina ,  Nobuo Ishii ,  Tomohiro Suzuki ,  Chishio Koshimizu

IPC分类号： G01J5/00 ,  G01K11/12 ,  H01L21/324 ,  G01K1/16

CPC分类号： G01J5/0003 ,  G01K11/12

摘要： The temperature of the surface and/or inside of a substrate is measured by irradiating the front surface or rear surface of the substrate, whose temperature is to be measured, with light and measuring the interference of a reflected light from the substrate and a reference light. A method and apparatus for measuring temperature or thickness which is suitable for directly measuring the temperature of the outermost surface layer of a substrate, and an apparatus for treating a substrate for an electronic device, which uses such method, are provided.

公开(公告)号：US5571366A

公开(公告)日：1996-11-05

申请号：US327798

申请日：1994-10-20

申请人： Nobuo Ishii ,  Jiro Hata ,  Chishio Koshimizu ,  Yoshifumi Tahara ,  Hiroshi Nishikawa ,  Isei Imahashi

发明人： Nobuo Ishii ,  Jiro Hata ,  Chishio Koshimizu ,  Yoshifumi Tahara ,  Hiroshi Nishikawa ,  Isei Imahashi

IPC分类号： H01J37/32 ,  H05H1/00

CPC分类号： H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/3299 ,  H01J2237/334 ,  H01J2237/3343

摘要： A plasma processing apparatus includes a chamber having a gas inlet port and a gas discharge port, a rest table, arranged in the chamber, for supporting a wafer which has a surface to be processed, a radio frequency antenna for supplying a radio frequency energy into the chamber, and generating an induced plasma in the chamber, and a radio frequency voltage source for applying a radio frequency voltage to the radio frequency antenna. A pressure and/or light variation in the chamber is measured during generation of the plasma, by a measurement system, and the radio frequency voltage source is controlled based on a signal from the measurement system, so that voltage to be applied to the antenna is controlled according to the pressure and/or light in the chamber.

摘要翻译： 一种等离子体处理装置，包括具有气体入口和气体排出口的室，设置在室内的用于支撑具有待处理表面的晶片的静止台，用于将射频能量供给的射频天线 并且在腔室中产生感应等离子体，以及用于向射频天线施加射频电压的射频电压源。 通过测量系统在等离子体的产生期间测量室中的压力和/或光的变化，并且基于来自测量系统的信号来控制射频电压源，使得施加到天线的电压为 根据腔室内的压力和/或光线进行控制。

公开(公告)号：US5783492A

公开(公告)日：1998-07-21

申请号：US399939

申请日：1995-03-03

申请人： Kimihiro Higuchi ,  Chishio Koshimizu ,  Ryoichiro Koshi ,  Teruo Iwata ,  Nobuo Ishii

发明人： Kimihiro Higuchi ,  Chishio Koshimizu ,  Ryoichiro Koshi ,  Teruo Iwata ,  Nobuo Ishii

IPC分类号： C23C16/02 ,  C23C16/507 ,  C23C16/54 ,  H01L21/00 ,  H01H1/00

CPC分类号： H01L21/67069 ,  C23C16/0245 ,  C23C16/507 ,  C23C16/54

摘要： A plasma processing method of performing plasma processing such as plasma film formation processing on a target object arranged in a processing vessel is disclosed. This method includes the first step of introducing an inert gas into the processing vessel, the second step of generating a plasma of the inert gas in the processing vessel, the third step of introducing a processing gas for processing the target object into the processing vessel, and the fourth step of generating a plasma of the processing gas in the processing vessel to process the target object.

摘要翻译： 公开了一种等离子体处理方法，其对配置在处理容器中的目标物体进行等离子体处理，例如等离子体成膜处理。 该方法包括将惰性气体引入处理容器的第一步骤，在处理容器中产生惰性气体等离子体的第二步骤，将处理对象物的处理气体引入处理容器的第三步骤， 以及在处理容器中产生处理气体的等离子体以处理目标物体的第四步骤。

公开(公告)号：US5374327A

公开(公告)日：1994-12-20

申请号：US053353

申请日：1993-04-28

申请人： Issei Imahashi ,  Nobuo Ishii ,  Chishio Koshimizu

发明人： Issei Imahashi ,  Nobuo Ishii ,  Chishio Koshimizu

IPC分类号： H01L21/302 ,  C23F4/00 ,  G01N21/68 ,  H01L21/3065 ,  G01N21/00

CPC分类号： G01N21/68

摘要： HBr and Cl.sub.2 are used as etching gases and Ar is used as a carrier gas in an ECR etching apparatus in which a semiconductor wafer is processed. Light emitted from plasma generated is dispersed by first and second spectroscopes to detect intensities of those spectra of the plasma which have first and second wavelengths. Both of these spectra are selected from those of an Ar atom. A CPU compares a present value, which represents a ratio of the spectral intensities detected, with a selected value of the ratio previously stored, and adjusts the intensity of a magnetic field such that the present value becomes closer to the selected value. The adjustment of the magnetic field intensity is carried out by changing the value of a current applied to magnetic coils. The magnetic field intensity is a parameter for adjusting an electron temperature of the plasma, and thus, the electron temperature of the plasma is adjusted by adjusting the magnetic field intensity.

摘要翻译： HBr和Cl2用作蚀刻气体，Ar用作加工半导体晶片的ECR蚀刻装置中的载气。 由等离子体产生的光被第一和第二光谱分散，以检测具有第一和第二波长的等离子体的那些光谱的强度。 这两种光谱均选自Ar原子。 CPU将表示所检测的光谱强度的比率的当前值与先前存储的比率的选定值进行比较，并且调整磁场的强度，使得当前值变得更接近所选择的值。 通过改变施加到电磁线圈的电流的值来进行磁场强度的调整。 磁场强度是用于调整等离子体的电子温度的参数，因此通过调整磁场强度来调整等离子体的电子温度。

公开(公告)号：US07956310B2

公开(公告)日：2011-06-07

申请号：US11529390

申请日：2006-09-29

申请人： Chishio Koshimizu ,  Tomohiro Suzuki

发明人： Chishio Koshimizu ,  Tomohiro Suzuki

IPC分类号： B23K10/00

CPC分类号： F27B17/0025 ,  F27B5/04 ,  G01K5/48 ,  G01K11/00 ,  H01L21/67248

摘要： A stage onto which is electrostatically attracted a substrate to be processed in a substrate processing apparatus, which enables the semiconductor device yield to be improved. A temperature measuring apparatus 200 measures a temperature of the substrate to be processed. A temperature control unit 400 carries out temperature adjustment on the substrate to be processed such as to become equal to a target temperature based on a preset parameter. A temperature control unit 400 controls the temperature of the substrate to be processed by controlling the temperature adjustment by the temperature control unit 400 based on a measured temperature measured by the temperature measuring apparatus 200.

摘要翻译： 在衬底处理装置中静电吸引待处理衬底的阶段，能够提高半导体器件的产量。 温度测量装置200测量待处理的基板的温度。 温度控制单元400基于预设参数，在要处理的基板上进行温度调节，使其等于目标温度。 温度控制单元400基于由温度测量装置200测量的测量温度来控制由温度控制单元400进行的温度调节来控制待处理的基板的温度。

公开(公告)号：US07446881B2

公开(公告)日：2008-11-04

申请号：US11325504

申请日：2006-01-05

申请人： Tomohiro Suzuki ,  Chishio Koshimizu

发明人： Tomohiro Suzuki ,  Chishio Koshimizu

IPC分类号： G01B11/02 ,  G01B9/02

CPC分类号： G01B11/0675

摘要： A measuring apparatus including a light source that emits light with a wavelength that allows the light to be transmitted through and reflected at each measurement target, a splitter that splits the light from the light source into measurement light and reference light, a reference mirror at which the reference light from the splitter is reflected, a mechanism for driving the reference mirror to adjust the optical path length of the reference light reflected from the reference mirror and a mechanism for measuring the interference of the reference light reflected from the reference mirror as the reference light from the splitter is radiated toward the reference mirror and measurement beams reflected from a plurality of measurement targets as the measurement light from the splitter is radiated toward the measurement targets so as to be transmitted through the measurement targets.

摘要翻译： 一种测量装置，包括发射具有允许光在每个测量目标上透射和反射的波长的光的光源，将来自光源的光分解成测量光和参考光的分离器，参考反射镜，其中 来自分离器的参考光被反射，用于驱动参考反射镜以调整从参考反射镜反射的参考光的光路长度的机构和用于测量从参考反射镜反射的参考光的干涉作为参考的机构 来自分离器的光朝向参考反射镜照射，并且作为来自分离器的测量光从多个测量对象反射的测量光束朝向测量对象辐射，以便透射通过测量目标。

公开(公告)号：US20070084847A1

公开(公告)日：2007-04-19

申请号：US11529390

申请日：2006-09-29

申请人： Chishio Koshimizu ,  Tomohiro Suzuki

发明人： Chishio Koshimizu ,  Tomohiro Suzuki

IPC分类号： F27B5/14 ,  F27B5/18

CPC分类号： F27B17/0025 ,  F27B5/04 ,  G01K5/48 ,  G01K11/00 ,  H01L21/67248

摘要： A stage onto which is electrostatically attracted a substrate to be processed in a substrate processing apparatus, which enables the semiconductor device yield to be improved. A temperature measuring apparatus 200 measures a temperature of the substrate to be processed. A temperature control unit 400 carries out temperature adjustment on the substrate to be processed such as to become equal to a target temperature based on a preset parameter. A temperature control unit 400 controls the temperature of the substrate to be processed by controlling the temperature adjustment by the temperature control unit 400 based on a measured temperature measured by the temperature measuring apparatus 200.

摘要翻译： 在衬底处理装置中静电吸引待处理衬底的阶段，能够提高半导体器件的产量。 温度测量装置200测量待处理的基板的温度。 温度控制单元400基于预设参数，在要处理的基板上进行温度调节，使其等于目标温度。 温度控制单元400基于由温度测量装置200测量的测量温度来控制由温度控制单元400进行的温度调节来控制待处理的基板的温度。

公开(公告)号：US08164033B2

公开(公告)日：2012-04-24

申请号：US13097251

申请日：2011-04-29

申请人： Chishio Koshimizu ,  Tomohiro Suzuki

发明人： Chishio Koshimizu ,  Tomohiro Suzuki

IPC分类号： H05B1/02

CPC分类号： F27B17/0025 ,  F27B5/04 ,  G01K5/48 ,  G01K11/00 ,  H01L21/67248

摘要： A stage onto which is electrostatically attracted a substrate to be processed in a substrate processing apparatus, which enables the semiconductor device yield to be improved. A temperature measuring apparatus 200 measures a temperature of the substrate to be processed. A temperature control unit 400 carries out temperature adjustment on the substrate to be processed such as to become equal to a target temperature based on a preset parameter. A temperature control unit 400 controls the temperature of the substrate to be processed by controlling the temperature adjustment by the temperature control unit 400 based on a measured temperature measured by the temperature measuring apparatus 200.

摘要翻译： 在衬底处理装置中静电吸引待处理衬底的阶段，能够提高半导体器件的产量。 温度测量装置200测量待处理的基板的温度。 温度控制单元400基于预设参数，在要处理的基板上进行温度调节，使其等于目标温度。 温度控制单元400基于由温度测量装置200测量的测量温度来控制由温度控制单元400进行的温度调节来控制待处理的基板的温度。