公开(公告)号：US20130267054A1

公开(公告)日：2013-10-10

申请号：US13910153

申请日：2013-06-05

Applicant: THE UNIVERSITY OF TOKYO ,  FUJITSU LIMITED

Inventor： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Hisao Sudo ,  Yasuhiko Arakawa

IPC: H01L33/06

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01S5/0224 ,  H01S5/0655 ,  H01S5/209 ,  H01S5/22 ,  H01S5/3086 ,  H01S5/3406 ,  H01S5/3412 ,  H01S5/34306 ,  H01S2301/173 ,  Y10S977/774

Abstract: A semiconductor light emitting device includes a lower cladding layer, an active layer, and an AlGaAs upper cladding layer mounted on a GaAs substrate. The semiconductor light emitting device has a ridge structure including the AlGaAs upper cladding layer. The semiconductor light emitting device further includes an InGaAs etching stop layer provided in contact with the lower side of the AlGaAs upper cladding layer. The InGaAs etching stop layer has a band gap greater than that of the active layer.

Abstract translation: 半导体发光器件包括安装在GaAs衬底上的下包层，有源层和AlGaAs上覆层。 半导体发光器件具有包括AlGaAs上覆层的脊结构。 半导体发光器件还包括与AlGaAs上覆层的下侧接触设置的InGaAs蚀刻停止层。 InGaAs蚀刻停止层的带隙大于有源层的带隙。

公开(公告)号：US08802468B2

公开(公告)日：2014-08-12

申请号：US13910153

申请日：2013-06-05

Applicant: Fujitsu Limited ,  The University of Tokyo

Inventor： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Hisao Sudo ,  Yasuhiko Arakawa

IPC: H01S5/22 ,  H01L33/06

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01S5/0224 ,  H01S5/0655 ,  H01S5/209 ,  H01S5/22 ,  H01S5/3086 ,  H01S5/3406 ,  H01S5/3412 ,  H01S5/34306 ,  H01S2301/173 ,  Y10S977/774

Abstract: A semiconductor light emitting device includes a lower cladding layer, an active layer, and an AlGaAs upper cladding layer mounted on a GaAs substrate. The semiconductor light emitting device has a ridge structure including the AlGaAs upper cladding layer. The semiconductor light emitting device further includes an InGaAs etching stop layer provided in contact with the lower side of the AlGaAs upper cladding layer. The InGaAs etching stop layer has a band gap greater than that of the active layer.

Abstract translation: 半导体发光器件包括安装在GaAs衬底上的下包层，有源层和AlGaAs上覆层。 半导体发光器件具有包括AlGaAs上覆层的脊结构。 半导体发光器件还包括与AlGaAs上覆层的下侧接触设置的InGaAs蚀刻停止层。 InGaAs蚀刻停止层的带隙大于有源层的带隙。

公开(公告)号：US08716044B2

公开(公告)日：2014-05-06

申请号：US14027243

申请日：2013-09-16

Applicant: Fujitsu Limited

Inventor： Tsuyoshi Yamamoto ,  Hisao Sudo

IPC: H01L21/00

CPC classification number: H01S5/34 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/2081 ,  H01S5/209 ,  H01S5/22 ,  H01S5/3086 ,  H01S5/3412

Abstract: A p-type cladding layer (3) of p-type semiconductor is formed over a substrate. An active layer (5) including a p-type semiconductor region is disposed over the p-type cladding layer. A buffer layer (10) of non-doped semiconductor is disposed over the active layer. A ridge-shaped n-type cladding layer (11) of n-type semiconductor is disposed over a partial surface of the buffer layer. The buffer layer on both sides of the ridge-shaped n-type cladding layer is thinner than the buffer layer just under the ridge-shaped n-type cladding layer.

Abstract translation: 在衬底上形成p型半导体的p型覆层（3）。 包括p型半导体区域的有源层（5）设置在p型覆层上。 非有源半导体的缓冲层（10）设置在有源层上。 n型半导体的脊状n型覆盖层（11）设置在缓冲层的部分表面上。 脊状n型包覆层的两侧的缓冲层比刚好在脊形n型包覆层下方的缓冲层薄。