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1.发明授权公开(公告)号：US08802468B2
公开(公告)日：2014-08-12
申请号：US13910153
申请日：2013-06-05
Applicant: Fujitsu Limited , The University of Tokyo
Inventor： Nobuaki Hatori , Tsuyoshi Yamamoto , Hisao Sudo , Yasuhiko Arakawa
CPC classification number: H01L33/06 , B82Y20/00 , H01S5/0224 , H01S5/0655 , H01S5/209 , H01S5/22 , H01S5/3086 , H01S5/3406 , H01S5/3412 , H01S5/34306 , H01S2301/173 , Y10S977/774
Abstract: A semiconductor light emitting device includes a lower cladding layer, an active layer, and an AlGaAs upper cladding layer mounted on a GaAs substrate. The semiconductor light emitting device has a ridge structure including the AlGaAs upper cladding layer. The semiconductor light emitting device further includes an InGaAs etching stop layer provided in contact with the lower side of the AlGaAs upper cladding layer. The InGaAs etching stop layer has a band gap greater than that of the active layer.
Abstract translation: 半导体发光器件包括安装在GaAs衬底上的下包层，有源层和AlGaAs上覆层。 半导体发光器件具有包括AlGaAs上覆层的脊结构。 半导体发光器件还包括与AlGaAs上覆层的下侧接触设置的InGaAs蚀刻停止层。 InGaAs蚀刻停止层的带隙大于有源层的带隙。
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公开(公告)号：US09871347B2
公开(公告)日：2018-01-16
申请号：US15281426
申请日：2016-09-30
Applicant: FUJITSU LIMITED , NEC Corporation , The University of Tokyo
Inventor： Nobuaki Hatori , Masashige Ishizaka , Takanori Shimizu , Yasuhiko Arakawa , Satoshi Iwamoto , Katsuaki Tanabe
IPC: G02B6/122 , H01S5/20 , H01S5/10 , H01S5/12 , H04B10/40 , H04B10/50 , H04B10/516 , H01S5/026 , H01S5/125 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/042 , H01S5/14 , H01S5/34
CPC classification number: H01S5/2027 , H01S5/0085 , H01S5/021 , H01S5/02276 , H01S5/026 , H01S5/0425 , H01S5/1014 , H01S5/1032 , H01S5/12 , H01S5/1237 , H01S5/124 , H01S5/125 , H01S5/141 , H01S5/3412 , H04B10/40 , H04B10/501 , H04B10/516
Abstract: A semiconductor light source includes a substrate, an optical waveguide having a reflection structure provided on the substrate with an oxide film in between and a semiconductor light emitting element provided on the optical waveguide. The optical waveguide includes a constant width core layer portion located in a center portion, tapered core layer portions that are provided on either side of the constant width core layer and of which the core width gradually increases and a constant width core layer portion for an optical wire waveguide. The semiconductor light emitting element is placed so as to cover at least a portion of the tapered core layer portions on both sides.
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公开(公告)号：US08906721B2
公开(公告)日：2014-12-09
申请号：US13898808
申请日：2013-05-21
Applicant: Fujitsu Limited , The University of Tokyo
Inventor： Nobuaki Hatori , Tsuyoshi Yamamoto , Manabu Matsuda , Yasuhiko Arakawa
IPC: H01S5/12 , B82Y20/00 , H01S5/22 , H01S5/34 , H01L33/02 , B82Y40/00 , H01L33/30 , H01S5/343 , H01S5/042 , H01S5/30
CPC classification number: H01S5/341 , B82Y20/00 , B82Y40/00 , H01L33/02 , H01L33/30 , H01S5/0424 , H01S5/12 , H01S5/22 , H01S5/221 , H01S5/309 , H01S5/3403 , H01S5/3412 , H01S5/34313 , Y10S977/774
Abstract: A method for manufacturing a semiconductor light emitting device includes forming a lower cladding layer over a GaAs substrate; forming a quantum dot active layer over the lower cladding layer; forming a first semiconductor layer over the quantum dot active layer; forming a diffraction grating by etching the first semiconductor layer; forming a second semiconductor layer burying the diffraction grating; and forming an upper cladding layer having a conductive type different from that of the lower cladding layer over the second semiconductor layer, wherein the processes after forming the quantum dot active layer are performed at a temperature not thermally deteriorating or degrading quantum dots included in the quantum dot active layer.
Abstract translation: 一种半导体发光器件的制造方法，包括在GaAs衬底上形成下包层; 在下包层上形成量子点有源层; 在所述量子点有源层上形成第一半导体层; 通过蚀刻第一半导体层形成衍射光栅; 形成掩埋所述衍射光栅的第二半导体层; 以及在所述第二半导体层上形成具有与所述下包层的导电类型不同的导电类型的上包覆层，其中形成所述量子点有源层之后的工艺在不会使所述量子中包含的量子点不会发生热劣化或降解的温度下进行 点活动层。
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4.发明申请公开(公告)号：US20130267054A1
公开(公告)日：2013-10-10
申请号：US13910153
申请日：2013-06-05
Applicant: THE UNIVERSITY OF TOKYO , FUJITSU LIMITED
Inventor： Nobuaki Hatori , Tsuyoshi Yamamoto , Hisao Sudo , Yasuhiko Arakawa
IPC: H01L33/06
CPC classification number: H01L33/06 , B82Y20/00 , H01S5/0224 , H01S5/0655 , H01S5/209 , H01S5/22 , H01S5/3086 , H01S5/3406 , H01S5/3412 , H01S5/34306 , H01S2301/173 , Y10S977/774
Abstract: A semiconductor light emitting device includes a lower cladding layer, an active layer, and an AlGaAs upper cladding layer mounted on a GaAs substrate. The semiconductor light emitting device has a ridge structure including the AlGaAs upper cladding layer. The semiconductor light emitting device further includes an InGaAs etching stop layer provided in contact with the lower side of the AlGaAs upper cladding layer. The InGaAs etching stop layer has a band gap greater than that of the active layer.
Abstract translation: 半导体发光器件包括安装在GaAs衬底上的下包层，有源层和AlGaAs上覆层。 半导体发光器件具有包括AlGaAs上覆层的脊结构。 半导体发光器件还包括与AlGaAs上覆层的下侧接触设置的InGaAs蚀刻停止层。 InGaAs蚀刻停止层的带隙大于有源层的带隙。
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公开(公告)号：US20130267052A1
公开(公告)日：2013-10-10
申请号：US13898808
申请日：2013-05-21
Applicant: The University of Tokyo , FUJITSU LIMITED
Inventor： Nobuaki Hatori , Tsuyoshi Yamamoto , Manabu Matsuda , Yasuhiko Arakawa
IPC: H01S5/34
CPC classification number: H01S5/341 , B82Y20/00 , B82Y40/00 , H01L33/02 , H01L33/30 , H01S5/0424 , H01S5/12 , H01S5/22 , H01S5/221 , H01S5/309 , H01S5/3403 , H01S5/3412 , H01S5/34313 , Y10S977/774
Abstract: A method for manufacturing a semiconductor light emitting device includes forming a lower cladding layer over a GaAs substrate; forming a quantum dot active layer over the lower cladding layer; forming a first semiconductor layer over the quantum dot active layer; forming a diffraction grating by etching the first semiconductor layer; forming a second semiconductor layer burying the diffraction grating; and forming an upper cladding layer having a conductive type different from that of the lower cladding layer over the second semiconductor layer, wherein the processes after forming the quantum dot active layer are performed at a temperature not thermally deteriorating or degrading quantum dots included in the quantum dot active layer.
Abstract translation: 一种制造半导体发光器件的方法包括在GaAs衬底上形成下覆层; 在下包层上形成量子点有源层; 在所述量子点有源层上形成第一半导体层; 通过蚀刻第一半导体层形成衍射光栅; 形成掩埋所述衍射光栅的第二半导体层; 以及在所述第二半导体层上形成具有与所述下包层的导电类型不同的导电类型的上包覆层，其中形成所述量子点有源层之后的工艺在不会使所述量子中包含的量子点不会发生热劣化或降解的温度下进行 点活动层。
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Patent Agency Ranking
公开(公告)号：US20170098922A1
公开(公告)日：2017-04-06
申请号：US15281426
申请日：2016-09-30
Applicant: FUJITSU LIMITED , NEC Corporation , The University of Tokyo
Inventor： Nobuaki Hatori , Masashige Ishizaka , Takanori Shimizu , Yasuhiko Arakawa , Satoshi Iwamoto , Katsuaki Tanabe
CPC classification number: H01S5/2027 , H01S5/0085 , H01S5/021 , H01S5/02276 , H01S5/026 , H01S5/0425 , H01S5/1014 , H01S5/1032 , H01S5/12 , H01S5/1237 , H01S5/124 , H01S5/125 , H01S5/141 , H01S5/3412 , H04B10/40 , H04B10/501 , H04B10/516
Abstract: A semiconductor light source includes a substrate, an optical waveguide having a reflection structure provided on the substrate with an oxide film in between and a semiconductor light emitting element provided on the optical waveguide. The optical waveguide includes a constant width core layer portion located in a center portion, tapered core layer portions that are provided on either side of the constant width core layer and of which the core width gradually increases and a constant width core layer portion for an optical wire waveguide. The semiconductor light emitting element is placed so as to cover at least a portion of the tapered core layer portions on both sides.
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公开(公告)号：US09871147B2
公开(公告)日：2018-01-16
申请号：US15352632
申请日：2016-11-16
Applicant: Sharp Kabushiki Kaisha , The University of Tokyo
Inventor： Teruhisa Kotani , Yasuhiko Arakawa , Tetsu Tatsuma
IPC: H01L31/0236 , H01L31/0224 , H01L31/0304 , H01L31/0352 , H01L31/0232 , H01L31/09
CPC classification number: H01L31/022408 , H01L31/02327 , H01L31/03044 , H01L31/03046 , H01L31/03048 , H01L31/035236 , H01L31/09 , Y02E10/544
Abstract: A photodetector including a substrate, a light absorption layer arranged over the substrate, the light absorption layer including a stack including a semiconductor layer that absorbs light of a wavelength having an electric field vector parallel to a normal direction of a substrate surface, a lower contact layer arranged on a first side of the light absorption layer, a lower electrode contacting with the lower contact layer, an upper contact layer arranged on a second side of the light absorption layer, and an upper electrode contacting with the upper contact layer. An uneven structure including polarization-selective shapes of projections or depressions on the second side of the upper contact layer is provided, the shapes of projections or depressions each having a size of a wavelength or less of incident light in the semiconductor layer and half the wavelength or greater and being periodically arranged in at least one direction.
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公开(公告)号：US09601643B2
公开(公告)日：2017-03-21
申请号：US15165103
申请日：2016-05-26
Applicant: Sharp Kabushiki Kaisha , The University of Tokyo
Inventor： Hirofumi Yoshikawa , Makoto Izumi , Yasuhiko Arakawa
IPC: H01L29/06 , H01L31/0352 , H01L31/072 , H01L31/055 , H01L31/0232 , H01L31/109 , H01L31/054
CPC classification number: H01L31/055 , H01L31/035218 , Y02E10/52
Abstract: A photoelectric conversion element includes a superlattice semiconductor layer including barrier sub-layers and quantum sub-layers (quantum dot sub-layers) alternately stacked and also includes a wavelength conversion layer containing a wavelength conversion material converting the wavelength of incident light. The wavelength conversion layer converts incident light into light with a wavelength corresponding to an optical transition from a quantum level of the conduction band of the superlattice semiconductor layer to a continuum level of the conduction band.
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公开(公告)号：US20240291241A1
公开(公告)日：2024-08-29
申请号：US18585845
申请日：2024-02-23
Applicant: THE UNIVERSITY OF TOKYO , AIO CORE CO., LTD.
Inventor： Yasuhiko Arakawa , Masahiro Kakuda , Jinkwan Kwoen , Takahiro Nakamura
CPC classification number: H01S5/341 , H01S5/3013 , H01S5/3054 , H01S5/3086 , H01S5/343
Abstract: A semiconductor laser device with a quantum-dot structure allowing for improvement of its high-temperature operation characteristics is provided. The semiconductor laser device has an active-layer structure including one or more active layers. Each active layer has a quantum-dot structure. The quantum-dot structure includes: an island-shaped crystal; a lateral potential barrier layer that at least partially embeds the perimeter of the island-shaped crystal; and an upper crystal layer that covers both an upper end part of the island-shaped crystal and the lateral potential barrier layer. A first bandgap of the lateral potential barrier layer is larger than a second bandgap of the upper crystal layer.
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公开(公告)号：US10181539B2
公开(公告)日：2019-01-15
申请号：US15632523
申请日：2017-06-26
Applicant: Sharp Kabushiki Kaisha , The University of Tokyo
Inventor： Hirofumi Yoshikawa , Makoto Izumi , Yasuhiko Arakawa , Takeo Kageyama
IPC: H01L31/06 , H01L31/0352 , H01L21/02 , H01L31/0224 , H01L31/0232 , H01L31/101 , H01L31/0304 , H01L31/0735 , H01L31/054
Abstract: A photoelectric conversion element includes a buffer layer, a BSF layer, a base layer, a photoelectric conversion layer, an emitter layer, a window layer, a contact layer, and a p-type electrode sequentially on one surface of a substrate, and includes an n-type electrode on the other surface of the substrate. The photoelectric conversion layer has at least one quantum dot layer. The at least one quantum dot layer includes a quantum dot and a barrier layer. A photoelectric conversion member including the buffer layer, the BSF layer, the base layer, the photoelectric conversion layer, the emitter layer, the window layer, and the contact layer has an edge of incidence that receives light in an oblique direction relative to the growth direction of the quantum dot. A concentrator concentrates sunlight and causes the concentrated sunlight to enter the photoelectric conversion member from the edge of incidence.
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