公开(公告)号：US06791807B1

公开(公告)日：2004-09-14

申请号：US09326002

申请日：1999-06-04

申请人： Fuminori Hikami ,  Hideyasu Nagai ,  Masaki Ueno ,  Marcos M. Lederman ,  Hirohiko Kamimura ,  Masahiko Ando ,  Kenji Komaki

发明人： Fuminori Hikami ,  Hideyasu Nagai ,  Masaki Ueno ,  Marcos M. Lederman ,  Hirohiko Kamimura ,  Masahiko Ando ,  Kenji Komaki

IPC分类号： G11B533

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  H01F10/3268

摘要： A spin-valve magnetic transducing element. In one embodiment, a spin-valve magnetic transducing element is disclosed in which a ferromagnetic tunneling junction film, including first and second ferromagnetic layers and an insulating layer is enclosed between the ferromagnetic layers. A nonmagnetic metal thin film is inserted between the second ferromagnetic layer and the insulating layer, all of which are formed on a substrate.

摘要翻译： 自旋阀磁转矩元件。 在一个实施例中，公开了一种自旋阀磁转换元件，其中包括第一和第二铁磁层和绝缘层的铁磁隧道结膜被包围在铁磁层之间。 在第二铁磁层和绝缘层之间插入非磁性金属薄膜，所有这些都形成在基板上。

公开(公告)号：US07046490B1

公开(公告)日：2006-05-16

申请号：US09479267

申请日：2000-01-06

申请人： Masaki Ueno ,  Hideyasu Nagai ,  Koichi Suzuki ,  Tomoki Fukagawa ,  Fuminori Hikami

发明人： Masaki Ueno ,  Hideyasu Nagai ,  Koichi Suzuki ,  Tomoki Fukagawa ,  Fuminori Hikami

IPC分类号： G11B5/39

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  G11B5/3903 ,  H01L43/10

摘要： A spin valve magnetoresistance sensor of a thin film magnetic head. In one embodiment, a spin valve magnetoresistance sensor is provided with a spin valve film, in which a base layer including a first base film of Ta or some other nonmagnetic metal and, on top of this, a second base film of an alloy represented by NiFeX (where X is at least one element selected from among Cr, Nb, Rh) is formed on a substrate, and on top of this are formed by layering a free magnetic layer and pinned magnetic layer arranged to enclose a nonmagnetic conductive layer, as well as an antiferromagnetic layer, the second base film has an fcc (face-centered cubic) structure and also has a (111) orientation.

摘要翻译： 薄膜磁头的自旋阀磁阻传感器。 在一个实施例中，自旋阀磁阻传感器设置有自旋阀膜，其中包括Ta的第一基膜或其他一些非磁性金属的基底层，并且其上形成第二基底膜 NiFeX（其中X是选自Cr，Nb，Rh中的至少一种元素）形成在基板上，并且其上形成有通过分层设置为包围非磁性导电层的自由磁性层和固定磁性层而形成，如 作为反铁磁层，第二基膜具有fcc（面心立方体）结构，并且还具有（111）取向。

公开(公告)号：US06340533B1

公开(公告)日：2002-01-22

申请号：US09443953

申请日：1999-11-19

申请人： Masaki Ueno ,  Hideyasu Nagai ,  Tatsuo Sawasaki ,  Fuminori Hikami

发明人： Masaki Ueno ,  Hideyasu Nagai ,  Tatsuo Sawasaki ,  Fuminori Hikami

IPC分类号： B32B1500

CPC分类号： B82Y25/00 ,  B32B15/04 ,  C22C45/04 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3268 ,  Y10T428/12465 ,  Y10T428/12576 ,  Y10T428/12937

摘要： A synthetic-type spin-valve MR sensor having a pinned magnetic layer with a multi-layer film structure. In one embodiment, on a substrate are formed by layering a free magnetic layer, a pinned magnetic layer including first and second ferromagnetic films, which are mutually coupled antiferromagnetically and which enclose a nonmagnetic coupling film. A nonmagnetic conductive layer is enclosed between these two magnetic layers. An antiferromagnetic layer neighbors the pinned magnetic layer. The first ferromagnetic film neighboring the antiferromagnetic layer is formed from a high-resistivity Co-base material. By making the products of the saturation magnetization and the film thickness of the first ferromagnetic layer and the second ferromagnetic layer substantially equal, the apparent magnetic moment of the pinned magnetic layer as a whole is zero, and the magnetostatic action on the free magnetic layer is eliminated or reduced. Shunting of the sense current to the first ferromagnetic film is suppressed, and a high rate of magnetoresistive change is obtained.

摘要翻译： 一种具有多层膜结构的钉扎磁性层的合成型自旋阀MR传感器。 在一个实施例中，在衬底上通过层叠自由磁性层，包括第一和第二铁磁膜的钉扎磁性层，其被反铁磁相互耦合并且包围非磁性耦合膜。 在这两个磁性层之间封装有非磁性导电层。 反铁磁层与被钉扎的磁性层相邻。 与反铁磁层相邻的第一铁磁膜由高电阻率Co基材料形成。 通过使第一铁磁层和第二铁磁层的饱和磁化强度和膜厚度的乘积基本相等，固定磁性层整体的表观磁矩为零，自由磁性层的静磁力为 消除或减少 抑制了对第一铁磁膜的感测电流的分流，并且获得了高的磁阻变化率。

公开(公告)号：US06322911B1

公开(公告)日：2001-11-27

申请号：US09495822

申请日：2000-02-01

申请人： Tomoki Fukagawa ,  Hiroshi Nishida ,  Masanori Ueno ,  Masateru Nose ,  Hideyasu Nagai ,  Fuminori Higami

发明人： Tomoki Fukagawa ,  Hiroshi Nishida ,  Masanori Ueno ,  Masateru Nose ,  Hideyasu Nagai ,  Fuminori Higami

IPC分类号： G11B566

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/66 ,  G11B2005/3996 ,  Y10S428/90 ,  Y10T428/11

摘要： The present invention provides a spin-valve magnetic resistance sensor in which an underlayer, which has a second underlayer film with an fcc structure consisting of an alloy formed by combining one or more elements selected from a set consisting of elements of group VIIIa and group Ib of the periodic table, and one or more elements selected from a set consisting of elements of groups IIa, IVa, Va, VIa, IIb, Ib and IVb of the periodic table, such as NiFeCrTi or NiCrTi, etc., is formed on the substrate, and a magnetic resistance (MR) film which has an antiferromagnetic layer consisting of a Pt1−xMnx alloy or an Ir1−xMnx alloy is laminated on top of this underlayer. The composition ratio of the element with the smallest free energy of oxide formation among the elements contained in the alloy of the second underlayer film is in the range of 0.1 atomic % to 15 atomic %.

摘要翻译： 本发明提供了一种自旋阀磁阻传感器，其中具有第二下层膜，其具有通过组合一种或多种元素形成的合金形成的fcc结构的第二下层膜，所述组合选自由VIIIa族和Ib族组成的组 的周期表，以及从由元素周期表的组IIa，IVa，Va，VIa，IIb，Ib和IVb的元素组成的组中选择的一种或多种元素，例如NiFeCrTi或NiCrTi等，形成在 衬底和具有由Pt1-xMnx合金或Ir1-xMnx合金组成的反铁磁层的磁阻（MR）膜层压在该底层的顶部。 在第二下层膜的合金中包含的元素中，具有最小的氧化物形成自由能的元素的组成比在0.1原子％〜15原子％的范围内。