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公开(公告)号:US6162730A
公开(公告)日:2000-12-19
申请号:US249142
申请日:1999-02-12
申请人: Fumitaka Kai , Masahiko Maeda , Jun-ichi Yamashita , Toshiharu Yubitani , Hirofumi Hajime , Takamitsu Harada
发明人: Fumitaka Kai , Masahiko Maeda , Jun-ichi Yamashita , Toshiharu Yubitani , Hirofumi Hajime , Takamitsu Harada
IPC分类号: B24B1/00 , B28D5/00 , C30B33/00 , H01L21/302 , H01L21/304 , H01L21/461
CPC分类号: H01L21/02008 , B24B37/042 , B24B37/08 , C30B33/00 , Y10S438/928 , Y10S438/974
摘要: A method for efficiently fabricating semiconductor wafers of good planarization without utilizing chemical solutions of high etching rate is disclosed. The method slices a single-crystal ingot into slices of wafers. The edge of each wafer is chamfered. A lapping or grinding step is carried out to planarize the chamfered wafer. Both side surfaces of the wafer are then polished. Next, the wafer surface is mirror polished. Finally, the wafer is cleaned.
摘要翻译: 公开了一种在不使用高蚀刻速率的化学溶液的情况下有效地制造具有良好平坦化的半导体晶片的方法 该方法将单晶锭切成晶片。 每个晶片的边缘被倒角。 进行研磨或磨削步骤以使倒角晶片平坦化。 然后抛光晶片的两个侧表面。 接下来,晶片表面被镜面抛光。 最后,清洁晶片。
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公开(公告)号:US5899743A
公开(公告)日:1999-05-04
申请号:US705155
申请日:1996-08-29
申请人: Fumitaka Kai , Masahiko Maeda , Jun-ichi Yamashita , Toshiharu Yubitani , Hirofumi Hajime , Takamitsu Harada
发明人: Fumitaka Kai , Masahiko Maeda , Jun-ichi Yamashita , Toshiharu Yubitani , Hirofumi Hajime , Takamitsu Harada
IPC分类号: B24B37/04 , C30B33/00 , H01L21/302 , H01L21/306 , H01L21/304
CPC分类号: H01L21/02008 , B24B37/042 , B24B37/08 , C30B33/00 , Y10S438/906 , Y10S438/928 , Y10S438/974
摘要: A method for efficiently fabricating semiconductor wafers of good planarization without utilizing chemical solutions of high etching rate is disclosed. The method slices a single-crystal ingot into slices of wafers. The edge of each wafer is chamfered. A lapping step is carried out to planarize the chamfered wafer. Both side surfaces of the wafer are then polished. Next, the wafer surface is mirror polished. Finally, the wafer is cleaned.
摘要翻译: 公开了一种在不使用高蚀刻速率的化学溶液的情况下有效地制造具有良好平坦化的半导体晶片的方法 该方法将单晶锭切成晶片。 每个晶片的边缘被倒角。 进行研磨步骤以使倒角晶片平坦化。 然后抛光晶片的两个侧表面。 接下来,晶片表面被镜面抛光。 最后,清洁晶片。
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公开(公告)号:US5849636A
公开(公告)日:1998-12-15
申请号:US767032
申请日:1996-12-12
IPC分类号: H01L21/304 , H01L21/306 , H01L21/302
CPC分类号: H01L21/02008 , H01L21/02013 , H01L21/02019 , Y10S438/974
摘要: A method processes a semiconductor wafer by etching the wafer, which has been smoothed by rough lapping, with alkaline solution. A rod is sliced into a plurality of wafers. The peripheral edges of the wafers are chamfered. The processed strain layers over the wafers due to chamfering are smoothed and planarized. The processed strain layers are then removed by etching with alkaline solution. The etched wafers are mirror polished. Lastly, the mirror-polished wafers are cleaned.
摘要翻译: 一种方法通过用碱性溶液蚀刻已经通过粗糙研磨而平滑的晶片来处理半导体晶片。 棒被切成多个晶片。 晶片的外围边缘被倒角。 由于倒角而在晶片上加工的应变层被平滑化并平坦化。 然后通过用碱性溶液蚀刻除去经处理的应变层。 蚀刻后的晶片被镜面抛光。 最后,对镜面抛光的晶片进行清洁。
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公开(公告)号:US5904568A
公开(公告)日:1999-05-18
申请号:US941294
申请日:1997-09-30
申请人: Masahiko Maeda , Takamitsu Harada , Hisami Motoura , Eiichi Asano
发明人: Masahiko Maeda , Takamitsu Harada , Hisami Motoura , Eiichi Asano
IPC分类号: H01L21/306 , H01L21/302 , H01L21/304 , H01L21/00 , H01L21/02
CPC分类号: H01L21/02008
摘要: A process for precisely and efficiently manufacturing a semiconductor wafer is provided, which can prevent contamination by metals inside silicon crystals and remove the factors that degrade the GOI produced during the wafer manufacturing steps. A sliced and chamfered semiconductor wafer is subjected to lapping. The lapped semiconductor wafer is then etched, and thus the working strains produced by lapping is removed. The two sides of the etched semiconductor wafer are then primary polished with a dual-surface polishing machine. The primary polished semiconductor wafer is etched with an aqueous solution of 1% NaOH solution. The weak alkali etched semiconductor wafer is then mirror processed by a finish polishing. The finish polished semiconductor wafer is washed with an SC-1 solution.
摘要翻译: 提供了精确高效地制造半导体晶片的方法,其可以防止硅晶体内的金属的污染,并消除在晶片制造步骤期间产生的降低GOI的因素。 对切割的和倒角的半导体晶片进行研磨。 然后对重叠的半导体晶片进行蚀刻,从而去除通过研磨产生的工作应变。 然后用双面抛光机对蚀刻的半导体晶片的两面进行初级抛光。 用1%NaOH溶液的水溶液蚀刻主抛光的半导体晶片。 然后通过精加工抛光对弱碱蚀刻的半导体晶片进行镜面加工。 精加工的半导体晶片用SC-1溶液洗涤。
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公开(公告)号:US20050089723A1
公开(公告)日:2005-04-28
申请号:US10970932
申请日:2004-10-22
摘要: There is provided a magnetic recording medium which is well evaluated in a running reliability, has small amount of seizing on a magnetic head, suppresses a wear rate of the magnetic head, and maintains high reproduction power during running of the magnetic tape for a long time. The magnetic recording medium, in tape form, reproduces a magnetic recorded signal by a reproducing magnetic head utilizing a magnetoresistive effect element, and has a nonmagnetic layer including nonmagnetic powder dispersed in a binder, and a magnetic layer including ferromagnetic powder dispersed in a binder, the nonmagnetic layer and the magnetic layer are successively formed on a long tape-like nonmagnetic substrate, wherein the nonmagnetic layer contains the nonmagnetic powder having pH of 7.5 or more, and wherein the nonmagnetic layer or/and the magnetic layer contain at least one fatty acid amide having an alkyl group having 8 or more carbon atoms.
摘要翻译: 提供了一种磁性记录介质,其运行可靠性被良好评估,在磁头上具有少量卡住,抑制磁头的磨损率,并且在磁带运行很长时间内保持高的再生能力 。 磁带式的磁记录介质利用磁阻效应元件通过再现磁头再现磁记录信号,并且具有分散在粘合剂中的包含非磁性粉末的非磁性层和包含分散在粘合剂中的铁磁性粉末的磁性层, 非磁性层和磁性层依次形成在长带状非磁性基板上,其中非磁性层含有pH为7.5以上的非磁性粉末,其中非磁性层或/和磁性层含有至少一种脂肪 具有碳原子数为8以上的烷基的酰胺。
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