Abstract:
In an epoxy resin composition comprising (A) an epoxy resin, (B) a curing agent, (C) an inorganic compound, and (D) an inorganic filler, the inorganic compound (C) is an oxide of metal elements at least one of which is a metal element of Group II in the Periodic Table having a second ionization potential of up to 20 eV, typically Zn2SiO4, ZnCrO4, ZnFeO4 or ZnMoO4. When used for semiconductor encapsulation, the epoxy resin composition is highly reliable and cures into a product which is effective for minimizing electrical failure such as defective insulation due to a copper migration phenomenon.
Abstract:
An epoxy resin composition comprising (A) a mixture of a naphthalene type epoxy resin and an anthracene type epoxy resin, (B) a curing agent in the form of a naphthalene type phenolic resin, and (C) an inorganic filler is best suited for semiconductor encapsulation.
Abstract:
An epoxy resin composition comprising (A) a biphenyl skeleton epoxy resin, (B) a biphenyl skeleton phenolic resin as a curing agent, (C) molybdenum compound, and (D) an inorganic filler is suited for semiconductor encapsulation since it is effectively moldable and cures into a part having improved reflow crack resistance, moisture resistance, and flame retardance. It does not pose a hazard to human health or the environment.
Abstract:
A semiconductor encapsulating epoxy resin composition is provided comprising (A) an epoxy resin, (B) a phenolic resin curing agent, (C) a microencapsulated flame retardant comprising a red phosphorus-base core coated with a thermoplastic resin and/or thermosetting resin, (D) a molybdenum compound, and (E) an inorganic filler. The composition and its cured product have moisture-proof reliability and high flame retardance despite the absence of halogenated epoxy resins and antimony oxide.
Abstract:
An epoxy resin composition comprising (A) a naphthalene type epoxy resin in which 35-85 parts by weight of 1,1-bis(2-glycidyloxy-1-naphthyl)alkane and 1-35 parts by weight of 1,1-bis(2,7-diglycidyloxy-1-naphthyl)alkane are included per 100 parts by weight of the resin, (B) a curing agent in the form of a naphthalene type phenolic resin, (C) an inorganic filler, and (D) a phosphazene compound is best suited for semiconductor encapsulation because it has good flow, a low coefficient of linear expansion, a high Tg, minimal moisture absorption, and crack resistance upon lead-free soldering.
Abstract:
An epoxy resin composition comprising (A) a naphthalene type epoxy resin in which 35-85 parts by weight of 1,1-bis(2-glycidyloxy-1-naphthyl)alkane and 1-35 parts by weight of 1,1-bis(2,7-diglycidyloxy-1-naphthyl)alkane are included per 100 parts by weight of the resin, (B) a curing agent in the form of a naphthalene type phenolic resin, (C) an inorganic filler, and (D) a phosphazene compound is best suited for semiconductor encapsulation because it has good flow, a low coefficient of linear expansion, a high Tg, minimal moisture absorption, and crack resistance upon lead-free soldering.
Abstract:
An epoxy resin composition comprising (A) a naphthalene type epoxy resin in which 35-85 parts by weight of 1,1-bis(2-glycidyloxy-1-naphthyl)alkane and 1-35 parts by weight of 1,1-bis(2,7-diglycidyloxy-1-naphthyl)alkane are included per 100 parts by weight of the resin, (B) a curing agent in the form of a naphthalene type phenolic resin, (C) an inorganic filler, and (D) a rare earth oxide or hydrotalcite compound is best suited for semiconductor encapsulation because it has good flow, a low coefficient of linear expansion, a high Tg, minimal moisture absorption, and crack resistance upon lead-free soldering.
Abstract:
An epoxy resin composition comprising (A) at least one epoxy resin comprising (a) a naphthalene ring-containing epoxy resin having at least one substituted or unsubstituted naphthalene ring in a molecule and having an epoxy equivalent of 175 to 210, (B) a phenolic resin having at least one substituted or unsubstituted naphthalene ring in a molecule, and (C) an inorganic filler, the substituted or unsubstituted naphthalene ring of the epoxy resin (a) being contained in an amount of 45 to 60% by weight in the total amount of the epoxy resin (A) is best suited for semiconductor encapsulation because it has good flow, a low coefficient of linear expansion, a high Tg, minimal moisture absorption, and crack resistance upon lead-free soldering.
Abstract:
A semiconductor encapsulating epoxy resin composition is provided comprising (A) an epoxy resin, (B) a phenolic resin curing agent, (C) a molybdenum compound, (D-i) an organopolysiloxane, (D-ii) an organopolysiloxane cured product, or (D-iii) a block copolymer obtained by reacting an epoxy resin or alkenyl group-bearing epoxy resin with an organohydrogenpolysiloxane, and (E) an inorganic filler. The composition has improved moldability and solder crack resistance while exhibiting high flame retardance despite the absence of halogenated epoxy resins and antimony oxide.
Abstract:
An epoxy resin composition comprising (A) an epoxy resin, (B) a curing accelerator, and (C) an inorganic filler is light transmissive when it satisfies formulae (1) and (2): [{2(nA2+nC2)−(nA+nC)2}/2]½