公开(公告)号：US09708676B2

公开(公告)日：2017-07-18

申请号：US14384981

申请日：2012-03-13

申请人： Fuping Tang ,  Zhen Li ,  Xiaofeng Wang ,  Peng Fei ,  Jinsong Meng ,  Yue Zhang ,  Yong Ma ,  Wenzhong Wang ,  Zhiwen Zhang ,  Xiaoshan Wang ,  Meng Guo ,  Zhigang Zhao ,  Yang Lin ,  Guoqiang Xin ,  Weizhi Yao

发明人： Fuping Tang ,  Zhen Li ,  Xiaofeng Wang ,  Peng Fei ,  Jinsong Meng ,  Yue Zhang ,  Yong Ma ,  Wenzhong Wang ,  Zhiwen Zhang ,  Xiaoshan Wang ,  Meng Guo ,  Zhigang Zhao ,  Yang Lin ,  Guoqiang Xin ,  Weizhi Yao

IPC分类号： C21C1/02 ,  C21C7/06 ,  C21C7/064 ,  C21C7/00 ,  C21C7/10 ,  B22D11/00 ,  C21C5/35 ,  C21C5/36 ,  C21C7/072

CPC分类号： C21C7/064 ,  B22D11/001 ,  C21C1/025 ,  C21C5/35 ,  C21C5/36 ,  C21C7/0043 ,  C21C7/0068 ,  C21C7/0087 ,  C21C7/0645 ,  C21C7/072 ,  C21C7/10 ,  C21C2300/08

摘要： A method for preparing low-cost clean steel includes steps of: preliminarily desulfurizing iron melt: preliminarily desulfurizing in an iron melt channel during blast furnace tapping and during iron folding in an iron folding room, adding a desulfurizing ball into the iron melt during the blast furnace tapping or the iron folding; dephosphorizing and controlling sulfur: dephosphorizing and controlling sulfur during converter steelmaking, in such a manner that P≦0.014% and S≦0.004% during tapping; rapidly dephosphorizing by slag-forming: rapidly dephosphorizing by slag-forming during converter tapping, at a converter end point, controlling a C content at 0.02˜0.10%, adding a dephosphorizing ball through an alloy chute during the converter tapping, blowing argon and stirring at the same time; purifying steel melt during RH refining: adding a purifying ball at a late stage of the RH refining when a vacuum degree is at 66.7˜500 Pa; and continuously casting with whole-process protection.

公开(公告)号：US20150027656A1

公开(公告)日：2015-01-29

申请号：US14384981

申请日：2012-03-13

申请人： Fuping Tang ,  Zhen Li ,  Xiaofeng Wang ,  Peng Fei ,  Jinsong Meng ,  Yue Zhang ,  Yong Ma ,  Wenzhong Wang ,  Zhiwen Zhang ,  Xiaohan Wang ,  Meng Guo ,  Zhigang Zhao ,  Yang Lin ,  Guoqiang Xin ,  Weizhi Yao

发明人： Fuping Tang ,  Zhen Li ,  Xiaofeng Wang ,  Peng Fei ,  Jinsong Meng ,  Yue Zhang ,  Yong Ma ,  Wenzhong Wang ,  Zhiwen Zhang ,  Xiaohan Wang ,  Meng Guo ,  Zhigang Zhao ,  Yang Lin ,  Guoqiang Xin ,  Weizhi Yao

IPC分类号： C21C7/064 ,  B22D11/00

CPC分类号： C21C7/064 ,  B22D11/001 ,  C21C1/025 ,  C21C5/35 ,  C21C5/36 ,  C21C7/0043 ,  C21C7/0068 ,  C21C7/0087 ,  C21C7/0645 ,  C21C7/072 ,  C21C7/10 ,  C21C2300/08

摘要： A method for preparing low-cost clean steel includes steps of: preliminarily desulfurizing iron melt: preliminarily desulfurizing in an iron melt channel during blast furnace tapping and during iron folding in an iron folding room, adding a desulfurizing ball into the iron melt during the blast furnace tapping or the iron folding; dephosphorizing and controlling sulfur: dephosphorizing and controlling sulfur during converter steelmaking, in such a manner that P≦0.014% and S≦0.004% during tapping; rapidly dephosphorizing by slag-forming: rapidly dephosphorizing by slag-forming during converter tapping, at a converter end point, controlling a C content at 0.02˜0.10%, adding a dephosphorizing ball through an alloy chute during the converter tapping, blowing argon and stirring at the same time; purifying steel melt during RH refining: adding a purifying ball at a late stage of the RH refining when a vacuum degree is at 66.7˜500 Pa; and continuously casting with whole-process protection.

摘要翻译： 制备低成本清洁钢的方法包括以下步骤：预先将铁熔体脱硫：在高炉出钢期间和铁折叠期间在铁熔体通道中预先脱硫，在铁折叠室中铁折叠期间，在爆炸期间向铁熔体中加入脱硫球 炉膛或熨斗折叠; 脱磷控制硫：在转炉炼钢过程中脱磷和控制硫，使得出钢时P＆lt; 0.014％和S＆NlE; 0.004％; 通过成渣快速脱磷：在转炉攻丝期间通过炉渣形成快速脱磷，在转炉终点，控制C含量为0.02〜0.10％，在转炉出料过程中加入脱磷球通过合金槽，吹氩并搅拌 与此同时; 在RH精炼期间净化钢熔体：当真空度为66.7〜500Pa时，在RH精炼的后期添加净化球; 并持续铸造全过程保护。

公开(公告)号：US08421052B2

公开(公告)日：2013-04-16

申请号：US12855766

申请日：2010-08-13

申请人： Zhong L. Wang ,  Peng Fei

发明人： Zhong L. Wang ,  Peng Fei

IPC分类号： H01L21/00

CPC分类号： H04R17/02 ,  B82Y10/00 ,  H01L29/0676 ,  H01L29/413 ,  H01L29/775 ,  H01L29/84 ,  H04R25/60 ,  H04R31/006

摘要： An electrical device includes an insulating substrate; an elongated piezoelectric semiconductor structure, a first electrode and a second electrode. A first portion of the elongated piezoelectric semiconductor structure is affixed to the substrate and a second portion of the elongated piezoelectric semiconductor structure extends outwardly from the substrate. The first electrode is electrically coupled to a first end of the first portion of the elongated piezoelectric semiconductor structure. The second electrode is electrically coupled to a second end of the first portion of the elongated piezoelectric semiconductor structure.

摘要翻译： 电气装置包括绝缘基板; 细长的压电半导体结构，第一电极和第二电极。 细长压电半导体结构的第一部分固定到基底上，细长的压电半导体结构的第二部分从基底向外延伸。 第一电极电耦合到细长压电半导体结构的第一部分的第一端。 第二电极电耦合到细长压电半导体结构的第一部分的第二端。

公开(公告)号：US20170142979A1

公开(公告)日：2017-05-25

申请号：US15260196

申请日：2016-09-08

申请人： Yujun Jiang ,  Chaoxin Man ,  Ran Li ,  Peng Fei ,  Jieting Niu

发明人： Yujun Jiang ,  Chaoxin Man ,  Ran Li ,  Peng Fei ,  Jieting Niu

IPC分类号： A01N65/08 ,  A23L5/20

摘要： The present invention relates to a method for inactivating Cronobacter sakazakii, which belongs to the field of food safety technologies. The present invention provides a method to use tea polyphenols as an active ingredient to inactivate Cronobacter sakazakii. The invention can be used to control and eliminate the contamination of Cronobacter sakazakii in food or food processing, especially the contamination of Cronobacter sakazakii during PIF production. The present invention provides an effective method to clean and sterilize the environment and the equipment, especially to clean the inner wall of the equipment which is hard to clean due to biofilms formed inside.

公开(公告)号：US20110006286A1

公开(公告)日：2011-01-13

申请号：US12855766

申请日：2010-08-13

申请人： Zhong L. Wang ,  Peng Fei

发明人： Zhong L. Wang ,  Peng Fei

IPC分类号： H01L29/84 ,  H01L41/047 ,  H01L41/113 ,  H01L21/44

CPC分类号： H04R17/02 ,  B82Y10/00 ,  H01L29/0676 ,  H01L29/413 ,  H01L29/775 ,  H01L29/84 ,  H04R25/60 ,  H04R31/006

摘要： An electrical device includes an insulating substrate; an elongated piezoelectric semiconductor structure, a first electrode and a second electrode. A first portion of the elongated piezoelectric semiconductor structure is affixed to the substrate and a second portion of the elongated piezoelectric semiconductor structure extends outwardly from the substrate. The first electrode is electrically coupled to a first end of the first portion of the elongated piezoelectric semiconductor structure. The second electrode is electrically coupled to a second end of the first portion of the elongated piezoelectric semiconductor structure.

摘要翻译： 电气装置包括绝缘基板; 细长的压电半导体结构，第一电极和第二电极。 细长压电半导体结构的第一部分固定到基底上，细长的压电半导体结构的第二部分从基底向外延伸。 第一电极电耦合到细长压电半导体结构的第一部分的第一端。 第二电极电耦合到细长压电半导体结构的第一部分的第二端。