公开(公告)号：US20130146915A1

公开(公告)日：2013-06-13

申请号：US13687120

申请日：2012-11-28

Applicant: GENESIS PHOTONICS INC.

Inventor： YI-RU HUANG ,  CHIH-LING WU ,  YU-YUN LO ,  PO-JEN SU

IPC: H01L33/60 ,  H01L33/62

CPC classification number: H01L33/60 ,  H01L33/20 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/16

Abstract: A light emitting diode including a first doped layer, a light emitting layer, a second doped layer and a substrate is provided. A plurality of first grooves penetrate through the second doped layer and the light emitting layer. Thus, a partial surface of the first doped layer is exposed. At least one of the plurality of first grooves extends to edges of the second dope layer and the light emitting layer. An insulating layer is disposed over a part of second doped layer and extends to sidewalls of the first grooves. A first contact is set in the first grooves and electrically connected to the first doped layer. A second contact is set on the second doped layer and electrically connected to the second doped layer. By the first grooves, the first contact can be electrically connected to the first doped layer for improving current spreading.

Abstract translation: 提供了包括第一掺杂层，发光层，第二掺杂层和衬底的发光二极管。 多个第一凹槽穿过第二掺杂层和发光层。 因此，暴露第一掺杂层的部分表面。 多个第一凹槽中的至少一个延伸到第二涂料层和发光层的边缘。 绝缘层设置在第二掺杂层的一部分上并延伸到第一凹槽的侧壁。 第一接触件设置在第一凹槽中并电连接到第一掺杂层。 第二接触设置在第二掺杂层上并电连接到第二掺杂层。 通过第一凹槽，第一接触可以电连接到第一掺杂层以改善电流扩展。

公开(公告)号：US20130134464A1

公开(公告)日：2013-05-30

申请号：US13661272

申请日：2012-10-26

Applicant: GENESIS PHOTONICS INC.

Inventor： YU-YUN LO ,  YI-RU HUANG ,  CHIH-LING WU ,  TZU-YANG LIN ,  YUN-LI LI

IPC: H01L33/60

CPC classification number: H01L33/42 ,  H01L33/38 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/14 ,  H01L2933/0016

Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.

Abstract translation: 本发明涉及发光二极管（LED）和倒装芯片封装的LED器件。 本发明提供一种LED装置。 LED装置被翻转并与封装基板电连接，从而形成倒装芯片封装的LED器件。 LED装置主要在第二种掺杂层和反射层之间具有欧姆接触层和平坦化缓冲层。 欧姆接触层改善了第二型掺杂层和反射层之间的欧姆接触特性，而不影响LED器件和倒装芯片封装的LED器件的发光效率。 设置在欧姆接触层和反射层之间的平坦化缓冲层id，用于使欧姆接触层平滑，从而使反射层平滑地粘附到平坦化缓冲层。 因此，反射层可以具有镜面反射的效果，并且也可以减小反射光上的散射现象。