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公开(公告)号:US12074251B2
公开(公告)日:2024-08-27
申请号:US17240342
申请日:2021-04-26
申请人: GLO AB
发明人: Saket Chadda , Zhen Chen
IPC分类号: H01L33/12 , H01L33/00 , H01L33/06 , H01L33/08 , H01L33/24 , H01L33/32 , H01L33/40 , H01L33/44
CPC分类号: H01L33/12 , H01L33/007 , H01L33/06 , H01L33/08 , H01L33/24 , H01L33/32 , H01L33/405 , H01L33/44 , H01L2933/0016 , H01L2933/0025
摘要: A structure includes a first material layer, a second material layer, and a stress relaxation layer having a thickness of 0.5 nm or less between the first material layer and the second material layer.
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公开(公告)号:US11973172B2
公开(公告)日:2024-04-30
申请号:US17317779
申请日:2021-05-11
申请人: GLO AB
CPC分类号: H01L33/62 , H01L27/156 , H01L33/005 , H01L33/46 , H01L2933/0025 , H01L2933/0066
摘要: A method includes transferring a first subset of the first LEDs from a first substrate to a first backplane to form first subpixels in pixel regions, transferring a first subset of the second LEDs to a second backplane and separating the first subset of the second LEDs from a second substrate to leave first vacancies on the second substrate, forming an additional electrically conductive material on a second subset of second LEDs located on the second substrate after transferring the first subset of the second LEDs to the second backplane, positioning the second substrate over the first backplane, such that the first subpixels are disposed in the first vacancies, and transferring the second subset of the second LEDs to a second subset of bonding structures on the first backplane to form second subpixels in the pixel regions, while a gap exists between the first subpixels and the second substrate.
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