Synthesizing low mask error enhancement factor lithography solutions
    1.
    发明授权
    Synthesizing low mask error enhancement factor lithography solutions 有权
    合成低掩模误差增强因子光刻解决方案

    公开(公告)号:US09395622B2

    公开(公告)日:2016-07-19

    申请号:US14185506

    申请日:2014-02-20

    Abstract: In one embodiment, a source mask optimization (SMO) method is provided that includes controlling bright region efficiency during at least one optical domain step. The bright region efficiency being the proportion of the total transmitted light that is transferred to bright areas of a target pattern. The optical domain intermediate solution provided by the at least one optical domain step may then be binarized to obtain an initial spatial domain solution with a controlled MEEF (Mask Error Enhancement Factor). The MEEF is controlled during at least one spatial domain step that optimizes the initial spatial domain solution.

    Abstract translation: 在一个实施例中,提供了一种源掩码优化(SMO)方法,其包括在至少一个光域步骤期间控制亮区效率。 亮区效率是传输到目标图形的明亮区域的总透射光的比例。 然后可以将由至少一个光学域步骤提供的光域中间溶液二值化以获得具有受控MEEF(掩模误差增强因子)的初始空间域解。 在至少一个优化初始空间域解决方案的空间域步骤中控制MEEF。

    Figurative models calibrated to correct errors in process models

    公开(公告)号:US10120963B1

    公开(公告)日:2018-11-06

    申请号:US15587602

    申请日:2017-05-05

    CPC classification number: G06F17/5009 G06F17/5081 G06F2217/10

    Abstract: A method for correcting a lithographic pattern includes selecting, by a processor, first stage input factors for utilization with a first computer-implemented model. The processor measures pattern data from existing measured dimensions of a semiconductor to obtain values for the first stage input factors and the first model against the measured pattern data. The processor applies the calibrated first model to predict printed dimensions and the printed dimensions from applying the calibrated first model comprise residuals. The processor establishes, based on the residuals, second stage input factors for a second model and calibrates the second model against the measured pattern data to predict deviations of the printed dimensions from the printed dimensions from the first stage input factors by utilizing the second stage input factors. The method produces predicted printed dimensions of a lithographic pattern by using the second model to revise the printed dimensions of the first model.

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