公开(公告)号：US10170304B1

公开(公告)日：2019-01-01

申请号：US15793621

申请日：2017-10-25

Applicant: GLOBALFOUNDRIES INC.

Inventor： Oh-Jung Kwon ,  Claude Ortolland ,  Dominic Schepis ,  Christopher Collins

IPC: H01L21/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to self-aligned nanotube structures and methods of manufacture. The structure includes at least one nanotube structure supported by a plurality of spacers and an insulator material between the spacers and contacting the at least one nanotube structure.

公开(公告)号：US20160141368A1

公开(公告)日：2016-05-19

申请号：US14540051

申请日：2014-11-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Kangguo Cheng ,  Ali Khakifirooz ,  Alexander Reznicek ,  Dominic Schepis

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H01L21/762 ,  H01L21/02

CPC classification number: H01L29/1054 ,  H01L21/02123 ,  H01L21/76283 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/66795 ,  H01L29/7846 ,  H01L29/785

Abstract: The present invention relates generally to semiconductor devices and more particularly, to a structure and method of forming one or more tall strained silicon germanium (SiGe) fins on a semiconductor on insulator (SOI) substrate. The fins have a germanium (Ge) concentration which may differ from the Ge concentration within the top layer of the SOI substrate. The difference in Ge concentration between the fins and the top layer of the SOI substrate may range from approximately 10 atomic percent to approximately 40 atomic percent. This Ge concentration differential may be used to tailor a strain on the fins. The strain on the fins may be tailored to increase the critical thickness and allow for a greater height of the fins as compared to conventional strained fins of the same SiGe concentration formed from bulk material.

Abstract translation: 本发明一般涉及半导体器件，更具体地，涉及在绝缘体上半导体（SOI）衬底上形成一个或多个高应变硅锗（SiGe）鳍片的结构和方法。 散热片的锗（Ge）浓度可能与SOI衬底的顶层内的Ge浓度不同。 SOI衬底的翅片和顶层之间的Ge浓度的差可以在约10原子％至约40原子％的范围内。 该Ge浓度差可用于调节鳍片上的应变。 与散装材料形成的相同SiGe浓度的常规应变翅片相比，翅片上的应变可以被调整以增加临界厚度并允许翅片更大的高度。