公开(公告)号：US20160190292A1

公开(公告)日：2016-06-30

申请号：US15061725

申请日：2016-03-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： James W. Adkisson ,  David L. Harame ,  Michael L. Kerbaugh ,  Qizhi Liu ,  John J. Pekarik

IPC: H01L29/732 ,  H01L29/10 ,  H01L29/737 ,  H01L29/161 ,  H01L29/45 ,  H01L29/08 ,  H01L29/06 ,  H01L29/04

CPC classification number: H01L29/732 ,  H01L29/04 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/161 ,  H01L29/45 ,  H01L29/456 ,  H01L29/66242 ,  H01L29/66287 ,  H01L29/7327 ,  H01L29/7371 ,  H01L29/7378

Abstract: The present disclosure relates to integrated circuit (IC) structures and methods of forming the same. An IC structure according to the present disclosure can include: a doped substrate region adjacent to an insulating region; a crystalline base structure including: an intrinsic base region located on and contacting the doped substrate region, the intrinsic base region having a first thickness; an extrinsic base region adjacent to the insulating region, wherein the extrinsic base region has a second thickness greater than the first thickness; a semiconductor layer located on the intrinsic base region of the crystalline base structure; and a doped semiconductor layer located on the semiconductor layer.

公开(公告)号：US20160064484A1

公开(公告)日：2016-03-03

申请号：US14476007

申请日：2014-09-03

Applicant: GLOBALFOUNDRIES INC.

Inventor： David L. Harame ,  Michael L. Kerbaugh ,  Qizhi Liu

IPC: H01L29/10 ,  H01L29/08 ,  H01L27/12 ,  H01L21/84 ,  H01L29/66 ,  H01L29/732

CPC classification number: H01L29/1004 ,  H01L21/84 ,  H01L27/12 ,  H01L29/0821 ,  H01L29/41708 ,  H01L29/66272 ,  H01L29/732

Abstract: Methods of forming bipolar device structures and bipolar device structures. An opening may be formed in a device layer of a silicon-on-insulator substrate that extends to a buried insulator layer of the silicon-on-insulator substrate. An intrinsic base layer may be grown within the device layer opening by lateral growth on opposite first and second sidewalls of the device layer bordering the opening. A first collector of a first bipolar junction transistor of the device structure may be formed at a first spacing from the first sidewall. A second collector of a second bipolar junction transistor of the device structure may be formed at a second spacing from the second sidewall. An emitter, which is shared by the first bipolar junction transistor and the second bipolar transistor, is formed inside the opening. Portions of the intrinsic base layer may supply respective intrinsic bases for the first and second bipolar junction transistors.

Abstract translation: 形成双极器件结构和双极器件结构的方法。 可以在绝缘体上硅衬底的器件层中形成开口，该器件层延伸到绝缘体上硅衬底的掩埋绝缘体层。 内部基极层可以通过在与开口相邻的器件层的相对的第一和第二侧壁上的横向生长而在器件层内生长。 器件结构的第一双极结型晶体管的第一集电极可以以与第一侧壁隔开的第一间隔形成。 器件结构的第二双极结晶体管的第二集电极可以形成在距离第二侧壁的第二间隔处。 在开口内形成由第一双极结型晶体管和第二双极晶体管共用的发射极。 本征基极层的一部分可以为第一和第二双极结型晶体管提供相应的本征基极。

公开(公告)号：US09553145B2

公开(公告)日：2017-01-24

申请号：US14476007

申请日：2014-09-03

Applicant: GLOBALFOUNDRIES INC.

Inventor： David L. Harame ,  Michael L. Kerbaugh ,  Qizhi Liu

IPC: H01L29/737 ,  H01L29/10 ,  H01L29/732 ,  H01L27/12 ,  H01L21/84 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/1004 ,  H01L21/84 ,  H01L27/12 ,  H01L29/0821 ,  H01L29/41708 ,  H01L29/66272 ,  H01L29/732

Abstract: Methods of forming bipolar device structures and bipolar device structures. An opening may be formed in a device layer of a silicon-on-insulator substrate that extends to a buried insulator layer of the silicon-on-insulator substrate. An intrinsic base layer may be grown within the device layer opening by lateral growth on opposite first and second sidewalls of the device layer bordering the opening. A first collector of a first bipolar junction transistor of the device structure may be formed at a first spacing from the first sidewall. A second collector of a second bipolar junction transistor of the device structure may be formed at a second spacing from the second sidewall. An emitter, which is shared by the first bipolar junction transistor and the second bipolar transistor, is formed inside the opening. Portions of the intrinsic base layer may supply respective intrinsic bases for the first and second bipolar junction transistors.

Abstract translation: 形成双极器件结构和双极器件结构的方法。 可以在绝缘体上硅衬底的器件层中形成开口，该器件层延伸到绝缘体上硅衬底的掩埋绝缘体层。 内部基极层可以通过在与开口相邻的器件层的相对的第一和第二侧壁上的横向生长而在器件层内生长。 器件结构的第一双极结型晶体管的第一集电极可以以与第一侧壁隔开的第一间隔形成。 器件结构的第二双极结晶体管的第二集电极可以形成在距离第二侧壁的第二间隔处。 在开口内形成由第一双极结型晶体管和第二双极晶体管共用的发射极。 本征基极层的一部分可以为第一和第二双极结型晶体管提供相应的本征基极。

公开(公告)号：US09312370B2

公开(公告)日：2016-04-12

申请号：US14300944

申请日：2014-06-10

Applicant: GLOBALFOUNDRIES INC.

Inventor： James W. Adkisson ,  David L. Harame ,  Michael L. Kerbaugh ,  Qizhi Liu ,  John J. Pekarik

IPC: H01L29/73 ,  H01L29/732 ,  H01L29/66 ,  H01L29/10

CPC classification number: H01L29/732 ,  H01L29/04 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/161 ,  H01L29/45 ,  H01L29/456 ,  H01L29/66242 ,  H01L29/66287 ,  H01L29/7327 ,  H01L29/7371 ,  H01L29/7378

Abstract: The present disclosure relates to integrated circuit (IC) structures and methods of forming the same. An IC structure according to the present disclosure can include: a doped substrate region adjacent to an insulating region; a crystalline base structure including: an intrinsic base region located on and contacting the doped substrate region, the intrinsic base region having a first thickness; an extrinsic base region adjacent to the insulating region, wherein the extrinsic base region has a second thickness greater than the first thickness; a semiconductor layer located on the intrinsic base region of the crystalline base structure; and a doped semiconductor layer located on the semiconductor layer.

Abstract translation: 本公开涉及集成电路（IC）结构及其形成方法。 根据本公开的IC结构可以包括：与绝缘区域相邻的掺杂衬底区域; 晶体基底结构，其包括：位于掺杂衬底区域上并与其接触的本征基极区域，本征基极区域具有第一厚度; 与所述绝缘区域相邻的外部基极区域，其中所述非本征基极区域具有大于所述第一厚度的第二厚度; 位于所述晶体基底结构的本征基极区上的半导体层; 以及位于半导体层上的掺杂半导体层。