公开(公告)号：US09647124B2

公开(公告)日：2017-05-09

申请号：US15060806

申请日：2016-03-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Emre Alptekin ,  Viraj Y. Sardesai ,  Reinaldo A. Vega

IPC: H01L29/786 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/02 ,  B82Y10/00 ,  H01L29/775 ,  H01L29/06 ,  H01L29/16 ,  H01L29/778 ,  H01L29/78

CPC classification number: H01L29/78687 ,  B82Y10/00 ,  H01L21/0237 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02507 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/02529 ,  H01L21/02587 ,  H01L21/02609 ,  H01L21/02664 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/775 ,  H01L29/7781 ,  H01L29/7851 ,  H01L29/78696

Abstract: Semiconductor devices with graphene nanoribbons and methods of manufacture are disclosed. The method includes forming at least one layer of Si material on a substrate. The method further includes forming at least one layer of carbon based material adjacent to the at least one layer of Si. The method further includes patterning at least one of the at least one layer of Si material and the at least one layer of carbon based material. The method further includes forming graphene on the patterned carbon based material.

公开(公告)号：US20160190344A1

公开(公告)日：2016-06-30

申请号：US15060806

申请日：2016-03-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Emre Alptekin ,  Viraj Y. Sardesai ,  Reinaldo A. Vega

IPC: H01L29/786 ,  H01L29/78 ,  H01L29/16

CPC classification number: H01L29/78687 ,  B82Y10/00 ,  H01L21/0237 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02507 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/02529 ,  H01L21/02587 ,  H01L21/02609 ,  H01L21/02664 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/775 ,  H01L29/7781 ,  H01L29/7851 ,  H01L29/78696

Abstract: Semiconductor devices with graphene nanoribbons and methods of manufacture are disclosed. The method includes forming at least one layer of Si material on a substrate. The method further includes forming at least one layer of carbon based material adjacent to the at least one layer of Si. The method further includes patterning at least one of the at least one layer of Si material and the at least one layer of carbon based material. The method further includes forming graphene on the patterned carbon based material.