公开(公告)号：US20180061699A1

公开(公告)日：2018-03-01

申请号：US15253097

申请日：2016-08-31

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shyam Pal ,  Granger Lobb ,  Aleksandra Clancy

IPC: H01L21/768 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/76802 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76877

Abstract: A method includes forming a stack of hard mask layers above a process layer. The stack includes first, second and third hard mask layers. The third hard mask layer is patterned to define therein a first mask element and to expose portions of the second hard mask layer. The second hard mask layer is patterned to define therein a second mask element below the first mask element and a third mask element, and to expose portions of the first hard mask layer. The first hard mask layer is patterned to define therein a fourth mask element below the second mask element, a fifth mask element below the third mask element, and a sixth mask element, and to expose portions of the process layer. The process layer is etched to remove portions of the process layer not covered by the first hard mask layer.

公开(公告)号：US10026645B2

公开(公告)日：2018-07-17

申请号：US15253097

申请日：2016-08-31

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shyam Pal ,  Granger Lobb ,  Aleksandra Clancy

IPC: H01L21/4763 ,  H01L21/768 ,  H01L21/033 ,  H01L21/311

Abstract: A method includes forming a stack of hard mask layers above a process layer. The stack includes first, second and third hard mask layers. The third hard mask layer is patterned to define therein a first mask element and to expose portions of the second hard mask layer. The second hard mask layer is patterned to define therein a second mask element below the first mask element and a third mask element, and to expose portions of the first hard mask layer. The first hard mask layer is patterned to define therein a fourth mask element below the second mask element, a fifth mask element below the third mask element, and a sixth mask element, and to expose portions of the process layer. The process layer is etched to remove portions of the process layer not covered by the first hard mask layer.