公开(公告)号：US09812336B2

公开(公告)日：2017-11-07

申请号：US14519215

申请日：2014-10-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Michael Ganz ,  Bingwu Liu ,  Johannes Marinus Van Meer ,  Sruthi Muralidharan

IPC: H01L21/02 ,  H01L21/266 ,  H01L29/78 ,  H01L21/324 ,  H01L29/66 ,  H01L21/265 ,  H01L21/3213 ,  H01L21/268

CPC classification number: H01L21/324 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/265 ,  H01L21/266 ,  H01L21/268 ,  H01L21/31055 ,  H01L21/32139 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7851 ,  H01L29/7854

Abstract: The invention provides a method of forming a semiconductor structure, which include: providing an intermediate semiconductor structure having semiconductor substrate, a fin having an EG oxide layer in contact with at least a portion of the fin, and a gate stack disposed over a portion of the fin; forming a silicon nitride layer over portions of the fin that are not located under the gate stack; and after forming the silicon nitride layer, performing one or more ion implantation steps on the intermediate semiconductor structure. The invention also provides a method of forming a semiconductor structure including: providing an intermediate semiconductor structure having a semiconductor substrate, a fin having an EG oxide layer in contact with at least a portion of the fin, and a gate material disposed over the fin; forming, over the fin and gate material of the intermediate semiconductor structure, a gate stack hardmask including an oxide layer; forming a silicon nitride barrier layer on the oxide layer of the gate stack hardmask; performing one or more gate stack hardmask patterning steps; removing the EG oxide layer from portions of the fin that are not located under the gate; and subsequent to removing the EG oxide layer from portions of the fin that are not located under the gate, performing one or more ion implantation steps.

公开(公告)号：US10096488B2

公开(公告)日：2018-10-09

申请号：US15608283

申请日：2017-05-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Michael Ganz ,  Bingwu Liu ,  Johannes Marinus Van Meer ,  Sruthi Muralidharan

IPC: H01L21/02 ,  H01L21/266 ,  H01L29/78 ,  H01L21/324 ,  H01L21/3213 ,  H01L29/66 ,  H01L21/265 ,  H01L21/268 ,  H01L21/3105

Abstract: The invention provides a method of forming a semiconductor structure, which include: providing an intermediate semiconductor structure having semiconductor substrate, a fin having an EG oxide layer in contact with at least a portion of the fin, and a gate stack disposed over a portion of the fin; forming a silicon nitride layer over portions of the fin that are not located under the gate stack; and after forming the silicon nitride layer, performing one or more ion implantation steps on the intermediate semiconductor structure. The invention also provides a method of forming a semiconductor structure including: providing an intermediate semiconductor structure having a semiconductor substrate, a fin having an EG oxide layer in contact with at least a portion of the fin, and a gate material disposed over the fin; forming, over the fin and gate material of the intermediate semiconductor structure, a gate stack hardmask including an oxide layer; forming a silicon nitride barrier layer on the oxide layer of the gate stack hardmask; performing one or more gate stack hardmask patterning steps; removing the EG oxide layer from portions of the fin that are not located under the gate; and subsequent to removing the EG oxide layer from portions of the fin that are not located under the gate, performing one or more ion implantation steps.