公开(公告)号：US20150198435A1

公开(公告)日：2015-07-16

申请号：US14155504

申请日：2014-01-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Alok VAID ,  Abner BELLO ,  Sipeng GU ,  Lokesh SUBRAMANY ,  Xiang HU ,  Akshey SEHGAL

IPC: G01B11/06 ,  H01L21/66

CPC classification number: H01L22/12 ,  G01B11/02 ,  G01B11/0633 ,  G01B11/065 ,  G01B2210/56 ,  G01N21/211 ,  G03F7/70616 ,  G03F7/70625

Abstract: Measurement of thickness of layers of a circuit structure is obtained, where the thickness of the layers is measured using an optical critical dimension (OCD) measurement technique, and the layers includes a high-k layer and an interfacial layer. Measurement of thickness of the high-k layer is separately obtained, where the thickness of the high-k layer is measured using a separate measurement technique from the OCD measurement technique. The separate measurement technique provides greater decoupling, as compared to the OCD measurement technique, of a signal for thickness of the high-k layer from a signal for thickness of the interfacial layer of the layers. Characteristics of the circuit structure, such as a thickness of the interfacial layer, are ascertained using, in part, the separately obtained thickness measurement of the high-k layer.

Abstract translation: 获得电路结构层的厚度的测量，其中使用光学临界尺寸（OCD）测量技术测量层的厚度，并且层包括高k层和界面层。 分别获得高k层的厚度的测量，其中使用来自OCD测量技术的单独的测量技术来测量高k层的厚度。 与OCD测量技术相比，单独的测量技术提供了来自层的界面层厚度的信号的高k层厚度的信号的更大的去耦。 电路结构的特性，如界面层的厚度，部分使用单独获得的高k层的厚度测量来确定。