公开(公告)号：US10181420B2

公开(公告)日：2019-01-15

申请号：US15425478

申请日：2017-02-06

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jason Eugene Stephens ,  David Michael Permana ,  Guillaume Bouche ,  Andy Wei ,  Mark Zaleski ,  Anbu Selvam K M Mahalingam ,  Craig Michael Child, Jr. ,  Roderick Alan Augur ,  Shyam Pal ,  Linus Jang ,  Xiang Hu ,  Akshey Sehgal

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/027 ,  H01L23/522 ,  H01L23/528

Abstract: Semiconductor devices and methods of fabricating the semiconductor devices with chamfer-less via multi-patterning are disclosed. One method includes, for instance: obtaining an intermediate semiconductor device; performing a trench etch into a portion of the intermediate semiconductor device to form a trench pattern; depositing an etching stack; performing at least one via patterning process; and forming at least one via opening into a portion of the intermediate semiconductor device. An intermediate semiconductor device is also disclosed.