FORMING FINFET CELL WITH FIN TIP AND RESULTING DEVICE
    1.
    发明申请
    FORMING FINFET CELL WITH FIN TIP AND RESULTING DEVICE 有权
    用FIN提示和结果设备形成FINFET电池

    公开(公告)号:US20150137203A1

    公开(公告)日:2015-05-21

    申请号:US14081736

    申请日:2013-11-15

    Abstract: Methods for forming a variable fin FinFET cell that can withstand a larger voltage without gate oxide breakdown at a fin tip and the resulting devices are disclosed. A plurality of fins is formed above a substrate, a portion of a fin is removed, forming a fin tip, a first area of a gate oxide layer is formed above the fin tip, and a second area of the gate oxide layer is formed above at least a remaining portion of the plurality of fins, wherein the first area is thicker than the second area.

    Abstract translation: 公开了用于形成能够承受较大电压而不会在翅片尖端处产生栅极氧化物击穿的可变鳍FinFET电池的方法和所得到的器件。 在基板的上方形成有多个翅片,去除翅片的一部分,形成翅片末端,在翅片顶部的上方形成栅极氧化物层的第一区域,并且在上部形成栅极氧化物层的第二区域 所述多个翅片的至少剩余部分,其中所述第一区域比所述第二区域厚。

    CONTACT POWER RAIL
    2.
    发明申请
    CONTACT POWER RAIL 有权
    联系电力铁

    公开(公告)号:US20150035052A1

    公开(公告)日:2015-02-05

    申请号:US14519902

    申请日:2014-10-21

    Abstract: A method for forming CA power rails using a three mask decomposition process and the resulting device are provided. Embodiments include forming a horizontal diffusion CA power rail in an active layer of a semiconductor substrate using a first color mask; forming a plurality of vertical CAs in the active layer using second and third color masks, the vertical CAs connecting the CA power rail to at least one diffusion region on the semiconductor substrate, spaced from the CA power rail, wherein each pair of CAs formed by one of the second and third color masks are separated by at least two pitches.

    Abstract translation: 提供了使用三掩模分解处理形成CA电力轨道的方法和所得到的装置。 实施例包括使用第一颜色掩模在半导体衬底的有源层中形成水平扩散CA电力轨道; 使用第二和第三颜色掩模在有源层中形成多个垂直CA,垂直CA将CA电力轨连接到半导体衬底上与CA电力轨道间隔开的至少一个扩散区,其中每对CA由 第二和第三彩色掩模中的一个被至少两个间距分开。

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