公开(公告)号：US10686008B2

公开(公告)日：2020-06-16

申请号：US16298663

申请日：2019-03-11

申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.

发明人： Shan Gao ,  Boo Yang Jung

IPC分类号： H01L43/00 ,  H01L27/22 ,  H01L25/065 ,  H05K1/02 ,  H01L23/552 ,  H01L23/00 ,  H01L43/02 ,  H01L43/12 ,  H05K1/05 ,  H05K1/09 ,  H05K1/11 ,  H05K3/32 ,  H05K3/40

摘要： Methods of magnetically shielding an MRAM structure on all six sides in a thin wire or thin flip chip bonding package and the resulting devices are provided. Embodiments include forming a first metal layer embedded between an upper and a lower portion of a PCB substrate, the first metal layer having a pair of metal filled vias laterally separated; attaching a semiconductor die to the upper portion of the PCB substrate between the pair of metal filled vias; connecting the semiconductor die electrically to the PCB substrate through the pair of metal filled vias; removing a portion of the upper portion of the PCB substrate outside of the pair of metal filled vias down to the first metal layer; and forming a second metal layer over and on four opposing sides of the semiconductor die, the second metal layer landed on the first metal layer.

公开(公告)号：US11018093B2

公开(公告)日：2021-05-25

申请号：US16432500

申请日：2019-06-05

申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.

发明人： Bharat Bhushan ,  Juan Boon Tan ,  Boo Yang Jung ,  Wanbing Yi ,  Danny Pak-Chum Shum

IPC分类号： H01L23/552 ,  G11C11/16 ,  H01L27/22 ,  H01L25/16 ,  H01L23/485 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78

摘要： Methodologies and an apparatus for enabling magnetic shielding of stand alone MRAM are provided. Embodiments include placing MRAM dies and logic dies on a first surface of a mold frame; forming a top magnetic shield over top and side surfaces of the MRAM dies; forming a mold cover over the MRAM dies, FinFET dies and mold frame; removing the mold frame to expose a bottom surface of the MRAM dies and FinFET dies; and forming a bottom magnetic shield over the bottom surface of the MRAM dies.

公开(公告)号：US10361162B1

公开(公告)日：2019-07-23

申请号：US15878139

申请日：2018-01-23

申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.

发明人： Bharat Bhushan ,  Juan Boon Tan ,  Boo Yang Jung ,  Wanbing Yi ,  Danny Pak-Chum Shum

IPC分类号： H01L23/552 ,  G11C11/16 ,  H01L27/22 ,  H01L25/16 ,  H01L21/78 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L23/485

摘要： Methodologies and an apparatus for enabling magnetic shielding of stand alone MRAM are provided. Embodiments include placing MRAM dies and logic dies on a first surface of a mold frame; forming a top magnetic shield over top and side surfaces of the MRAM dies; forming a mold cover over the MRAM dies, FinFET dies and mold frame; removing the mold frame to expose a bottom surface of the MRAM dies and FinFET dies; and forming a bottom magnetic shield over the bottom surface of the MRAM dies.

公开(公告)号：US10290678B2

公开(公告)日：2019-05-14

申请号：US15716115

申请日：2017-09-26

申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.

发明人： Shan Gao ,  Boo Yang Jung

IPC分类号： H01L43/00 ,  H01L27/22 ,  H01L43/02 ,  H01L43/12 ,  H05K1/11 ,  H05K1/05 ,  H05K1/09 ,  H05K3/40 ,  H01L23/00 ,  H05K3/32

摘要： Methods of magnetically shielding an MRAM structure on all six sides in a thin wire or thin flip chip bonding package and the resulting devices are provided. Embodiments include forming a first metal layer embedded between an upper and a lower portion of a PCB substrate, the first metal layer having a pair of metal filled vias laterally separated; attaching a semiconductor die to the upper portion of the PCB substrate between the pair of metal filled vias; connecting the semiconductor die electrically to the PCB substrate through the pair of metal filled vias; removing a portion of the upper portion of the PCB substrate outside of the pair of metal filled vias down to the first metal layer; and forming a second metal layer over and on four opposing sides of the semiconductor die, the second metal layer landed on the first metal layer.